STS4501 [SAMHOP]
P -Channel E nhancement Mode F ield E ffect Transistor; P -Channel ê nhancement模式F屈服ê ffect晶体管
| 型号： | STS4501 |
| 厂家： | 
SAMHOP MICROELECTRONICS CORP. |
| 描述： | P -Channel E nhancement Mode F ield E ffect Transistor |
| 文件： | 总7页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S TS 4501
t. 12,2007
S amHop Microelectronics Corp.
c
O
P-Channel E nhancement Mode Field E ffect Transistor
PR ODUCT S UMMAR Y
FE ATUR E S
VDS S
ID
S uper high dense cell design for low R DS (ON).
R ugged and reliable.
R DS (ON) ( m
Ω
) Max
65 @ VGS = -10V
85 @ VGS = -4.5V
-3.5A
-40V
S OT-23 Package.
D
S OT-23
G
S
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
Parameter
Limit
- 40
Unit
V
S ymbol
VDS
Drain-S ource Voltage
VGS
ID
V
Gate-S ource Voltage
20
-3.5
A
A
A
Drain Current-Continuous @ TJ=25 C
-Pulsed b
IDM
IS
- 14
Drain-S ource Diode Forward Current
Maximum Power Dissipation a
-1.25
1.25
PD
W
C
Operating Junction and S torage
Temperature R ange
TJ, TS TG
-55 to 150
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
C
/W
R
JA
100
1
S TS 4501
E LE C TR IC AL C HAR AC TE R IS TIC S (T
A
25 C unless otherwise noted)
=
Typ C Max
Parameter
Condition
Min
Unit
S ymbol
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
5
VGS 0V, ID -250uA
-40
V
=
BVDS S
IDS S
=
uA
nA
VDS -32V, VGS 0V
-1
=
=
VGS
20V, VDS 0V
=
Gate-Body Leakage
IGS S
100
=
a
ON CHAR ACTE R IS TICS
Gate Threshold Voltage
-3
65
85
-1.6
54
VGS (th)
V
VDS =VGS , ID = -250uA
-1
m ohm
m ohm
=
=
VGS -10V, ID -3.5A
Drain-S ource On-S tate R esistance
R DS (ON)
70
VGS =-4.5V, ID -2A
=
-20
VDS = -5V, VGS = -10V
On-S tate Drain Current
ID(ON)
gFS
A
S
Forward Transconductance
8.7
=
=
-10V, ID -3.5A
VDS
b
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance
660
PF
PF
PF
CIS S
COS S
CR S S
VDS =-25V, VGS = 0V
f =1.0MHZ
100
60
Output Capacitance
R everse Transfer Capacitance
b
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
tD(ON)
ns
ns
ns
10.5
11
VDD = -20V
ID = -1A
tr
R ise Time
VGS = -10V
R GE N = 3.3 ohm
tD(OFF)
Turn-Off Delay Time
Fall Time
72
tf
22
ns
Total Gate Charge
nC
nC
VDS =-28V, ID =-3.5A,VGS =-10V
DS =-28V, I =-3.5A,VGS =-4.5V
Qg
13
D
V
6.5
1.4
3.8
nC
nC
Qgs
Qgd
Gate-S ource Charge
Gate-Drain Charge
VDS =-28V, ID = -3.5 A
VGS =-10V
2
S TS 4501
E LE C TR IC AL C HAR AC TE R IS TIC S (T =25 C unless otherwise noted)
A
Typ Max
P arameter
DR AIN-S OUR C E DIODE C HAR AC TE R IS TIC S
C ondition
Min
Unit
V
S ymbol
b
-0.75
-1.2
Diode Forward Voltage
VS D
VGS = 0V, Is = -1.25A
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
15
12
9
15
V
GS =-10V
-55 C
VGS =-4V
12
VGS =-4.5V
9
6
VGS =-3.5V
6
VGS =-3V
Tj=125 C
3
0
3
0
25 C
3.2
VGS =-2.5V
0
0.8
1.6
2.4
4.0
4.8
0
0.5
1
2
3
1.5
2.5
-VDS , Drain-to-S ource Voltage (V)
-VGS , Gate-to-S ource Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
120
1.5
1.4
1.3
1.2
1.1
1.0
0.0
100
80
VGS =-4.5V
ID=-2A
VGS =-4.5V
VGS =-10V
60
40
VGS =-10V
ID=-3.5A
20
0
1
0
25
3
6
9
12
15
50
75
100
125
150
Tj( C)
-ID, Drain Current (A)
Tj, J unction Temperature ( C )
Figure 3. On-R esistance vs. Drain Current
and Gate Voltage
Figure 4. On-R esistance Variation with
Drain Current and Temperature
3
S TS 4501
1.15
1.10
1.3
ID=-250uA
VDS =VG S
1.2
ID=-250uA
1.1
1.0
0.9
0.8
1.05
1.00
0.95
0.90
0.85
0.7
0.6
6
0
-50
25 50
-25
125 150
75 100
-50 -25
0
25 50 75 100 125 150
Tj, Junction Temperature ( C )
Tj, Junction Temperature ( C )
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. G ate Threshold Variation
with Temperature
150
20.0
ID=-3.5A
125
25 C
10.0
100
125 C
75
50
75 C
25 C
75 C
25
0
125 C
1.0
0
2
4
6
8
10
0.4
0.6
0.8
1.0
1.2
1.4
-VGS , Gate- S ource Voltage (V)
-VS D, Body Diode Forward Voltage (V)
Figure 7. On-R esistance vs.
Gate-S ource Voltage
Figure 8. Body Diode Forward Voltage
Variation with S ource C urrent
8
S TS 4501
900
10
8
VDS=-28V
ID=-3.5A
750
Ciss
600
450
300
6
4
Coss
2
0
150
0
Crss
0
5
10
15
20
25
30
6
8
0
2
4
10
12
14 16
-VDS, Drain-to Source Voltage (V)
Qg, Total Gate Charge (nC)
Figure 10.Capacitance
20
400
10
1
t
i
m
TD(off)
Tr
i
L
100
60
)
1
s
N
0
m
O
(
s
R DS
1
0
0
m
Tf
TD(on)
1
s
D
10
C
V
G S =-10V
0.1
VDS=-20V,ID=-1A
VGS=-10V
S ingle P ulse
Tc=25 C
1
0.03
0.1
1
30 50
10
600
300
1
6
10
60 100
-VDS, Drain-Source Voltage (V)
Rg, Gate Resistance (
Ω
)
Figure 13. Maximum Safe
Operating Area
Figure 12.switching characteristics
10
1
0.5
0.2
DM
P
0.1
1
t
0.1
2
t
0.05
0.02
1. R thJA (t)=r (t) * R thJA
th
2. R JA=S ee Datasheet
3. TJM-TA = PDM* R thJA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
0.001
0.01
0.01
0.0000 1
0.000 1
0.01
0.1
1
10
100
1000
Square Wave Puls e Duration(sec)
Normalized Therma l T ransient Impedanc e C urve
5
S TS 4501
A
M
G
F
L
J
B
C
I
H
E
D (TYP.)
3/81
3/51
2/51
1/46
1
4/21
3/91
2/71
1/61
1/21
1/66
1/217
1/1:5
1/233
1/221
1/174
1/131
1/115
1/133
1/166
1/125
1
1/56
F
1/129
2/:1!SFG/
1/186!SFG/
G
2/11
1/21
2/41
1/31
1/162
1/119
.
1/14:
1/115
1/127
I
.
1/51
1/56
1±
J
1/144
1±
1/156
21±
2/26
21±
L
M
6
S TS 4501
SOT-23 Tape and Reel Data
SOT-23 Carrier Tape
TR
FEED DIRECTION
UNIT:р
T
PACKAGE
SOT-23
E
E1
E2
P0
P1
P2
A0
D0
D1
B0
K0
8.00
+0.30
-0.10
3.50
²0.05
3.00
²0.10
О1.00
+0.25
1.75
²0.10
4.00
²0.10
4.00
²0.10
0.20
²0.02
3.20
²0.10
1.33
²0.10
О1.50
+0.10
2.00
²0.05
SOT-23 Reel
UNIT:р
TAPE SIZE
REEL SIZE
G
R
W1
S
M
N
V
W
H
K
О178
²1
О60
²1
9.00
²0.5
12.00
²0.5
10.5
2.00
²0.5
О13.5
!!²0.5
О10.0
18.00
5.00
8р
О178
7
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