STS4DNFS30 [STMICROELECTRONICS]
N-channel - 30V - 0.044ohm - 4.5A SO-8 STripFET tm Power MOSFET plus schottky rectifier; N沟道 - 30V - 0.044ohm - 4.5A SO- 8的STripFET TM功率MOSFET加上肖特基整流器
| 型号： | STS4DNFS30 |
| 厂家： | 
ST |
| 描述： | N-channel - 30V - 0.044ohm - 4.5A SO-8 STripFET tm Power MOSFET plus schottky rectifier |
| 文件： | 总12页 (文件大小：298K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STS4DNFS30
N-channel - 30V - 0.044Ω - 4.5A SO-8
STripFET™ Power MOSFET plus schottky rectifier
General features
Type
VDSS
30V
RDS(on)
<0.055Ω
VRRM
ID
STS4DNFS30
Schottky
4.5A
IF(AV)
VF(MAX)
4.5A
30V
0.53V
SO-8
Description
This product associates the latest low voltage
STripFET™ in n-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing a large variety of DC-DC
converters for printers, portable equipment.
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
Marking
Package
Packaging
STS4DNFS30
S4DNFS30
SO-8
Tape & reel
July 2006
Rev 1
1/12
www.st.com
12
Contents
STS4DNFS30
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STS4DNFS30
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Mosfet absolute maximum ratings
Parameter
Value
Unit
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate- source voltage
30
20
4.5
3.2
13
2
V
V
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
A
ID
A
(1)
IDM
A
PTOT Total dissipation at TC = 25°C
1. Pulse width limited by safe operating area
W
Table 2.
Symbol
Schottky absolute maximum ratings
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
IF(RMS) RMS forward current
30
10
V
A
TL=125°C
IF(AV) Average forward current
4
75
1
A
A
A
δ=0.5
tp=10ms
IFSM
Surge non repetitive forward current
Repetitive peak reverse current
Sinusoidal
tp=2µs
IRRM
F=1kHz
IRSM
dv/dt
Non repetitive peak reverse current
Critical rate of rise of reverse voltage
tp=100µs
1
A
10000
v/µs
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
Rthj-amb Thermal resistance junction-amb Mosfet (1)
62.5
°C/W
Tstg
Tj
Storage temperature range Max
Junction temperature
-55 to 150
-55 to 150
°C
°C
1. Mounted on FR-4 board (steady state)
3/12
Electrical characteristics
STS4DNFS30
2
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 4.
Symbol
On /off states
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V(BR)DSS
ID = 250µA, VGS = 0
30
V
Zero gate voltage
V
DS = Max rating
1
µA
µA
IDSS
drain current (VGS = 0) VDS = Max rating, TC=125°C
10
Gate-body leakage
IGSS
VGS
=
20V
100 nA
V
current (VDS = 0)
Gate threshold voltage VDS = VGS, ID = 250µA
VGS(th)
RDS(on)
1
VGS = 10V, ID = 2A
VGS = 5V, ID = 2A
0.044 0.055
0.085
Ω
Ω
Static drain-source on
resistance
Table 5.
Symbol
Static
Parameter
Test conditions
Min.
Typ.
Max. Unit
Tj = 25°C
200
15
µA
Reverse leakage
current
(1)
IR
VR = VRRM
IF = 2A
Tj = 100°C
6
mA
Tj = 25°C
0.45
V
V
Tj = 125°C
0.325 0.375
Zero gate voltage
(1)
VF
drain current (VGS = 0)
Tj = 25°C
0.53
V
V
IF = 4A
Tj = 125°C
0.43
0.51
1. Pulse test: tp=380µs, δ < 2%. To evaluate the conduction losses use the following equation:
P = 0.24 × IF(AV) + 0.068IF2(RMS)
Table 6.
Symbol
Dynamic
Parameter
Test conditions
DS =10V, ID =2A
Min.
Typ.
Max. Unit
Forward
transconductance
gfs
V
5
S
Input capacitance
Ciss
Coss
Crss
330
115
28
pF
pF
pF
Output capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
Reverse transfer
capacitance
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 15V, ID = 4.5A,
VGS = 5V
4.7
1.2
2.1
nC
nC
nC
(see Figure 13)
4/12
STS4DNFS30
Electrical characteristics
Min. Typ. Max Unit
Table 7.
Switching times
Parameter
Symbol
Test Conditions
VDD = 15V, ID = 2A,
RG = 4.7Ω, VGS = 5V
(see Figure 12)
td(on)
tr
Turn-on delay time
Rise time
9
ns
ns
17
VDD = 15V, ID = 2A,
RG = 4.7Ω, VGS = 5V
(see Figure 12)
td(off)
tf
Turn-off delay time
Fall time
15
6
ns
ns
Table 8.
Symbol
Source drain diode
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
Source-drain current
4.5
13
A
A
(1)
ISDM
Source-drain current (pulsed)
(2)
VSD
Forward on voltage
ISD = 4.5A, VGS = 0
1.2
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.5A, di/dt = 100A/µs
VDD = 15V, Tj = 150°C
(see Figure 17)
22
14.3
1.3
ns
nC
A
Qrr
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
5/12
Electrical characteristics
STS4DNFS30
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5. Source-drain diode forward
characteristics
Figure 6. Static drain-source on resistance
6/12
STS4DNFS30
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature temperature
Figure 11. Normalized BV
temperature
voltage vs
DSS
7/12
Test circuits
STS4DNFS30
3
Test circuits
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load
switching and diode recovery times
Figure 15. Unclamped inductive load test
circuit
Figure 16. Unclamped inductive waveform
Figure 17. Switching time waveform
8/12
STS4DNFS30
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
Package mechanical data
STS4DNFS30
SO-8 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
1.27
3.81
e
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.14
0.157
0.050
0.023
L
0.015
M
S
8 (max.)
10/12
STS4DNFS30
Revision history
5
Revision history
Table 9.
Date
19-Jul-2005
Revision history
Revision
Changes
1
First release
11/12
STS4DNFS30
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