STS4NF100 [STMICROELECTRONICS]
N-CHANNEL 100V - 0.065 ohm - 4A SO-8 STripFET⑩ II POWER MOSFET; N沟道100V - 0.065欧姆 - 4A SO- 8 STripFET⑩ II功率MOSFET
| 型号： | STS4NF100 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 100V - 0.065 ohm - 4A SO-8 STripFET⑩ II POWER MOSFET |
| 文件： | 总8页 (文件大小：277K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STS4NF100
N-CHANNEL 100V - 0.065 Ω - 4A SO-8
STripFET™ II POWER MOSFET
V
R
I
D
TYPE
DSS
DS(on)
STS4NF100
100 V
<0.070 Ω
4 A
■
■
■
■
TYPICAL R (on) = 0.065 Ω
DS
EXCEPTIONAL dv/dt CAPABILITY
100 % AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
SO-8
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
HIGH-EFFICIENCY DC-DC CONVERTERS
■
UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
100
Unit
V
V
Drain-source Voltage (V = 0)
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
100
V
DGR
GS
V
GS
Gate- source Voltage
± 20
V
Drain Current (continuos) at T = 25°C
4
2.5
A
A
C
I
D
Drain Current (continuos) at T = 100°C
C
I
(•)
DM
Drain Current (pulsed)
16
A
P
Total Dissipation at T = 25°C
2.5
W
tot
C
(•) Pulse width limited by safe operating area.
July 2001
1/8
.
STS4NF100
THERMAL DATA
Rthj-amb
(*)Thermal Resistance Junction-ambient
Thermal Operating Junction-ambient
Storage Temperature
Single Operatio
50
°C/W
°C
°C
T
-55 to 150
-55 to 150
j
T
stg
(*)
Mounted on FR-4 board (t 10 sec.)
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
I
= 250 µA, V = 0
100
V
V
D
GS
(BR)DSS
Breakdown Voltage
V
= Max Rating
DS
Zero Gate Voltage
1
10
µA
µA
I
I
DSS
Drain Current (V = 0)
V
DS
= Max Rating T = 125°C
GS
C
Gate-body Leakage
V
GS
= ± 20 V
±100
nA
GSS
Current (V = 0)
DS
(*)
ON
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
4
Unit
V
V
GS(th)
V
V
= V
I
= 250 µA
I = 2 A
D
Gate Threshold Voltage
2
DS
GS
GS
D
= 10 V
Static Drain-source On
Resistance
0.065
0.070
Ω
R
DS(on)
DYNAMIC
Symbol
Parameter
Test Conditions
xR I = 2 A
DS(on)max D
Min.
Typ.
Max.
Unit
(*)
V
V
>I
g
fs
Forward Transconductance
10
S
DS D(on)
C
= 25V, f = 1 MHz, V = 0
GS
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
870
125
52
pF
pF
pF
DS
iss
C
oss
C
rss
2/8
STS4NF100
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
= 50 V
Min.
Typ.
Max.
Unit
V
R
I
= 4 A
D
Turn-on Delay Time
Rise Time
58
45
ns
ns
t
DD
d(on)
= 4.7 Ω
V
= 10 V
GS
t
r
G
(Resistive Load, Figure 3)
Q
V
= 80V I = 4A V =10V
D GS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
30
6
10
41
nC
nC
nC
g
DD
Q
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
= 50 V = 4 A
Min.
Min.
Typ.
Max.
Unit
V
R
I
D
Turn-off Delay Time
Fall Time
49
17
ns
ns
t
DD
d(off)
= 4.7Ω,
V
GS
= 10 V
t
G
f
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I
Source-drain Current
Source-drain Current (pulsed)
4
16
A
A
SD
( )
•
I
SDM
(*)
I
I
= 4 A
V
= 0
GS
V
Forward On Voltage
1.2
V
SD
SD
SD
t
= 4 A
di/dt = 100A/µs
T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
100
375
7.5
ns
nC
A
rr
Q
V
= 30 V
rr
DD
j
I
(see test circuit, Figure 5)
RRM
(*)
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
•)Pulse width limited by safe operating area.
Thermal Impedance
Safe Operating Area
3/8
STS4NF100
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STS4NF100
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
.
.
.
5/8
STS4NF100
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Fig. 4: Gate Charge test Circuit
Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STS4NF100
SO-8 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
e
1.27
3.81
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.14
0.157
0.050
0.023
L
0.015
M
S
8 (max.)
0016023
7/8
STS4NF100
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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