STS4DNFS30L [STMICROELECTRONICS]

N-CHANNEL 30V - 0.044ohm - 4A SO-8 STripFET⑩ II MOSFET PLUS SCHOTTKY RECTIFIER; N沟道30V - 0.044ohm - 4A SO- 8 STripFET⑩ II MOSFET PLUS肖特基整流器


型号：	STS4DNFS30L
厂家：	ST
描述：	N-CHANNEL 30V - 0.044ohm - 4A SO-8 STripFET⑩ II MOSFET PLUS SCHOTTKY RECTIFIER N沟道30V - 0.044ohm - 4A SO- 8 STripFET⑩ II MOSFET PLUS肖特基整流器
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STS4DNFS30L

N-CHANNEL 30V - 0.044Ω - 4A SO-8

STripFET™ II MOSFET PLUS SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

DSS

MOSFET

DS(on)

30 V

< 0.055 Ω

4 A

RRM

F(MAX)

SCHOTTKY

F(AV)

3 A

30 V

0.51 V

SO-8

DESCRIPTION

This product associates the latest low voltage

STripFET™ in n-channel version to a low drop

Schottky diode. Such configuration is extremely ver-

satile in implementing, a large variety of DC-DC

converters for printers, portable equipment, and cel-

lular phones.

INTERNAL SCHEMATIC DIAGRAM

MOSFET ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

± 16

Drain Current (continuous) at T = 25°C

Drain Current (continuous) at T = 100°C

2.5

(●)

Drain Current (pulsed)

TOT

Total Dissipation at T = 25°C

SCHOTTKY ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Repetitive Peak Reverse Voltage

RMS Forward Current

Value

Unit

RRM

F(RMS)

Average Forward Current

TL = 125°C

δ = 0.5

F(AV)

Surge Non Repetitive Forward Current

Repetitive Peak Reverse Current

tp = 10 ms

Sinusoidal

FSM

tp = 2 µs

RRM

F=1 kHz

Non Repetitive Peak Reverse Current

Critical Rate Of Rise Of Reverse Voltage

tp = 100 µs

RSM

dv/dt

10000

V/µs

(•)Pulse width limited by safe operating area

July 2002

1/8

STS4DNFS30L

THERMAL DATA

Rthj-amb

(*)Thermal Resistance Junction-ambient MOSFET

62.5

°C/W

°C

stg

Storage Temperature Range

Junction Temperature

-55 to 150

°C

(*) Mounted on FR-4 board (Steady State)

MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Drain-source

Test Conditions

Min.

Typ.

Max.

Unit

= 250 µA, V = 0

(BR)DSS

Breakdown Voltage

Zero Gate Voltage

= Max Rating

µA

DSS

Drain Current (V = 0)

= Max Rating, T = 125 °C

Gate-body Leakage

= ± 16 V

±100

GSS

Current (V = 0)

ON (1)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

GS(th)

= V , I = 250µA

Gate Threshold Voltage

Static Drain-source On

Resistance

= 10V, I = 2 A

0.044

0.051

0.055

0.065

Ω

DS(on)

= 5V, I = 2 A

Ω

DYNAMIC

Symbol

Parameter

Forward Transconductance

Input Capacitance

Test Conditions

Min.

Typ.

Max.

Unit

(1)

= 15 V I = 2 A

, D

= 25V, f = 1 MHz, V = 0

330

iss

Output Capacitance

oss

rss

Reverse Transfer

Capacitance

2/8

STS4DNFS30L

E1.LECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

= 15 V, I = 2 A

Turn-on Delay Time

d(on)

= 4.7 Ω V = 5 V

Rise Time

100

(see test circuit, Figure 1)

= 24 V, I = 4 A,

= 5 V

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

6.5

3.6

SWITCHING OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Turn-off Delay Time

Fall Time

= 15 V, I = 2 A,

d(off)

R = 4.7Ω, V = 5 V

G GS

(see test circuit, Figure 1)

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Typ.

Max.

Unit

Source-drain Current

(2)

(1)

Source-drain Current (pulsed)

Forward On Voltage

SDM

= 4 A, V = 0

1.2

= 4 A, di/dt = 100A/µs,

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

= 15 V, T = 150°C

(see test circuit, Figure 3)

1.4

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Safe Operating Area

Thermal Impedance

3/8

STS4DNFS30L

Output Characteristics

Transfer Characteristics

Transconductance

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Capacitance Variations

4/8

STS4DNFS30L

Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/8

STS4DNFS30L

Fig. 1: Switching Times Test Circuit For

Fig. 2: Gate Charge test Circuit

Resistive Load

Fig. 3: Test Circuit For Diode Recovery Behaviour

6/8

STS4DNFS30L

SO-8 MECHANICAL DATA

inch

TYP.

DIM.

MIN.

TYP.

MAX.

1.75

0.25

1.65

0.85

0.48

0.25

0.5

MIN.

MAX.

0.068

0.009

0.064

0.033

0.018

0.010

0.019

0.1

0.003

0.65

0.35

0.19

0.25

0.025

0.013

0.007

0.010

45 (typ.)

4.8

5.8

5.0

6.2

0.188

0.228

0.196

0.244

1.27

3.81

0.050

0.150

3.8

0.4

4.0

1.27

0.6

0.14

0.157

0.050

0.023

0.015

8 (max.)

0016023

7/8

STS4DNFS30L

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the

consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from

its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications

mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information

previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or

systems without express written approval of STMicroelectronics.

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco

Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.

8/8

STS4DNFS30L [STMICROELECTRONICS]

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