STS4DPFS30L [STMICROELECTRONICS]
P-CHANNEL 30V - 0.07ohm - 4A SO-8 STripFET⑩ MOSFET PLUS SCHOTTKY RECTIFIER; P沟道30V - 0.07ohm - 4A SO- 8 MOSFET STripFET⑩ PLUS肖特基整流器
| 型号： | STS4DPFS30L |
| 厂家： | 
ST |
| 描述： | P-CHANNEL 30V - 0.07ohm - 4A SO-8 STripFET⑩ MOSFET PLUS SCHOTTKY RECTIFIER |
| 文件： | 总8页 (文件大小：266K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STS4DPFS30L
P-CHANNEL 30V - 0.07Ω - 4A SO-8
STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
V
DSS
R
I
D
MOSFET
DS(on)
30 V
< 0.08 Ω
4 A
I
V
RRM
V
F(MAX)
SCHOTTKY
F(AV)
SO-8
3 A
30 V
0.51 V
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAM
This product associates the latest low voltage
STripFET™ in p-channel version to a low drop
Schottky diode. Such configuration is extremely ver-
satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel-
lular phones.
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
30
Unit
V
V
Drain-source Voltage (V = 0)
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
30
V
DGR
GS
V
Gate- source Voltage
± 20
4
V
GS
I
Drain Current (continuos) at T = 25°C
A
D
C
I
Drain Current (continuos) at T = 100°C
3.4
16
A
D
C
I
(●)
Drain Current (pulsed)
A
DM
P
TOT
Total Dissipation at T = 25°C
1.6
W
C
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Repetitive Peak Reverse Voltage
RMS Forward Current
Value
30
Unit
V
V
RRM
I
20
A
F(RMS)
I
Average Forward Current
TL = 125°C
δ = 0.5
3
75
1
A
F(AV)
I
Surge Non Repetitive Forward Current
Repetitive Peak Reverse Current
tp = 10 ms
Sinusoidal
A
A
A
FSM
I
tp = 2 µs
F = 1 kHz
RRM
I
Non Repetitive Peak Reverse Current
Critical Rate Of Rise Of Reverse Voltage
tp = 100 µs
1
RSM
Note: For the P-CHANNEL MOSFET actual polarity of Voltages
dv/dt
10000
V/µs
and current has to be reversed
1/8
October 2000
STS4DPFS30L
THERMAL DATA
Rthj-amb
(*)Thermal Resistance Junction-ambient MOSFET
85
100
°C/W
°C/W
°C
Rthj-amb
(*)Thermal Resistance Junction-ambient SCHOTTKY
Storage Temperature Range
T
stg
-55 to 150
150
T
Junction Temperature
°C
l
(*) Mounted on FR-4 board (Steady State)
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
D
= 250 µA, V = 0
20
V
(BR)DSS
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
1
µA
µA
nA
DSS
DS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
10
DS
GS
C
I
Gate-body Leakage
= ± 20 V
±100
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
1.6
Max.
2.5
Unit
V
V
GS(th)
V
DS
V
GS
V
GS
= V , I = 250µA
Gate Threshold Voltage
1
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 2 A
0.07
0.08
0.08
0.095
Ω
DS(on)
D
= 4.5V, I = 2 A
D
I
On State Drain Current
V
V
> I
= 10V
x R
DS(on)max,
16
A
D(on)
DS
D(on)
GS
DYNAMIC
Symbol
Parameter
Test Conditions
x R
DS(on)max,
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
5
S
D(on)
I
D
= 2 A
C
C
V = 25V, f = 1 MHz, V = 0
DS GS
Input Capacitance
Output Capacitance
1350
490
pF
pF
iss
oss
Reverse Transfer
Capacitance
C
rss
130
pF
2/8
STS4DPFS30L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
V
= 15V, I = 3A R = 4.7Ω
= 10V
Turn-on Delay Time
25
ns
d(on)
DD
D
G
GS
t
r
Rise Time
35
ns
(see test circuit, Figure 3)
Q
V
V
= 24V, I = 6A,
= 4.5 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
12.5
5
16
nC
nC
nC
g
DD
D
GS
Q
gs
Q
3
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-off Delay Time
Fall Time
V
= 15 V, I = 2A,
125
30
ns
ns
d(off)
DD
D
t
f
R = 4.7Ω, V = 4.5 V
G GS
(see test circuit, Figure 3)
t
Off-voltage Rise Time
Fall Time
Cross-over Time
V
= 24 V, I = 6 A,
83
40
75
ns
ns
ns
r(Voff)
clamp
D
t
f
R = 4.7Ω, V = 4.5 V
G GS
(see test circuit, Figure 5)
t
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
4
Unit
A
I
Source-drain Current
SD
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
16
A
SDM
V
I
I
= 4 A, V = 0
1.2
V
SD
SD
GS
t
rr
= 4 A, di/dt = 100A/µs,
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
45
36
ns
nC
A
SD
V
= 15 V, T = 150°C
j
DD
Q
rr
(see test circuit, Figure 5)
I
1.6
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I (*)
R
Reversed Leakage Current
T = 25 °C , V = 30 V
mA
mA
0.2
100
J
R
0.03
T = 125 °C , V = 30 V
J
R
V (*)
F
Forward Voltage Drop
T = 25 °C , I = 3 A
J F
0.51
0.46
V
V
T = 125 °C , I = 3 A
0.46
J
F
3/8
STS4DPFS30L
Safe Operating Area
Thermal Impedance
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/8
STS4DPFS30L
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STS4DPFS30L
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STS4DPFS30L
SO-8 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
e
1.27
3.81
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.14
0.157
0.050
0.023
L
0.015
M
S
8 (max.)
0016023
7/8
STS4DPFS30L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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8/8
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