STS4DNFS30L_07 [STMICROELECTRONICS]
N-channel 30V - 0.044ohm - 4A SO-8 STripFET TM MOSFET plus SCHOTTKY rectifier; N沟道30V - 0.044ohm - 4A SO- 8的STripFET TM MOSFET加上肖特基整流器
| 型号： | STS4DNFS30L_07 |
| 厂家： | 
ST |
| 描述： | N-channel 30V - 0.044ohm - 4A SO-8 STripFET TM MOSFET plus SCHOTTKY rectifier |
| 文件： | 总12页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STS4DNFS30L
N-channel 30V - 0.044Ω - 4A SO-8
STripFET™ MOSFET plus SCHOTTKY rectifier
General features
MOSFET
VDSS
RDS(on)
<0.056Ω
VRRM
ID
4A
30V
IF(AV)
3A
SCHOTTKY
VF(MAX)
0.51V
30V
S0-8
Description
This product associates the latest low voltage
STripFET™ in n-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-
DC converters for printers, portable equipment,
and cellular phones.
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
Marking
Package
Packaging
STS4DNFS30L
S4DNFS30L
SO-8
Tape & reel
January 2007
Rev 4
1/12
www.st.com
12
Contents
STS4DNFS30L
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STS4DNFS30L
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VDGR
VGS
ID
Drain-source voltage (vgs = 0)
30
30
16
4
V
V
V
A
A
A
W
Drain-gate voltage (RGS = 20 kΩ)
Gate- source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
ID
2.5
16
2
(1)
IDM
PTOT
Total dissipation at TC = 25°C dual operation
1. Pulse width limited by safe operating area
Table 2.
Symbol
Schottky absolute maximum ratings
Parameter
Value
30
Unit
Repetitive peak reverse
voltage
VRRM
V
A
A
IF(RMS) RMS forward current
20
3
TL=125°C
δ=0.5
IF(AV)
IFSM
Average forward current
tp = 10 ms
Sinusoidal
tp = 2 µs
F=1 kHz
Surge non repetitive forward
current
75
A
IRRM
IRSM
dv/dt
Repetitive peak reverse current
1
1
A
A
Non repetitive peak reverse
current
tp = 100 µs
Critical rate of rise of reverse
voltage
10000
V/µs
Table 3.
Thermal data
°C/W
°C/W
Thermal resistance junction-ambient
MOSFET(1)
Rthj-a
62.5
TJ
Junction temperature
-55 to 150
-55 to 150
°C
°C
Tstg
Storage temperature range
1. Mounted on FR-4 board (steady state)
3/12
Electrical characteristics
STS4DNFS30L
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source
V(BR)DSS
ID = 250 µA, VGS = 0
VDS = Max rating
30
V
Breakdown voltage
1
µA
µA
Zero gate voltage
IDSS
VDS=Max rating,
TC=125°C
Drain current (VGS = 0)
10
Gate-body leakage
current (VDS = 0)
IGSS
VGS = 16V
100
nA
V
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250µA
1
VGS = 10V, ID = 2A
VGS = 5V, ID = 2A
0.044 0.055
0.051 0.065
Ω
Ω
Static drain-source on
resistance
RDS(on)
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ. Max. Unit
(1)
gfs
Forward transconductance
Input capacitance
VDS= 15V, ID=2A
5
S
Ciss
330
90
pF
pF
VDS = 25V, f = 1 MHz,
Coss
Output capacitance
VGS = 0
Reverse transfer
capacitance
Crss
40
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
6.5
3.6
2
9
nC
nC
nC
VDD = 24V, ID = 4A,
VGS = 5V
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5.
Table 6.
Symbol
Switching times
Parameter
Test conditions
Min.
Typ.
Max. Unit
VDD=15 V, ID=2A,
RG=4.7Ω, VGS=5V
(see Figure 12)
td(on)
tr
Turn-on delay time
Rise time
11
ns
ns
100
VDD=15 V, ID=2A,
RG=4.7Ω, VGS=5V
(see Figure 12)
25
22
ns
ns
td(off)
tf
Turn-off delay time
Fall time
4/12
STS4DNFS30L
Electrical characteristics
Min Typ. Max Unit
Table 7.
Source drain diode
Parameter
Symbol
Test conditions
ISD
Source-drain current
4
A
A
V
(1)
ISDM
Source-drain current (pulsed)
Forward on voltage
16
1.2
(2)
VSD
ISD = 4A, VGS = 0
ISD = 4A, VDD = 15V
di/dt = 100A/µs,
Tj = 150°C
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
35
25
ns
nC
A
Qrr
IRRM
1.4
(see Figure 14)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
5/12
Electrical characteristics
STS4DNFS30L
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
Figure 3. Output characteristics
Figure 4. Transfer characteristics
Figure 5. Transconductance
Figure 6. Static drain-source on resistance
6/12
STS4DNFS30L
Electrical characteristics
Figure 7. Gate charge vs. gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs.
vs. temperature
temperature
Figure 11. Source-drain diode forward
characteristics
7/12
Test circuit
STS4DNFS30L
3
Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load
switching and diode recovery times
Figure 15. Unclamped Inductive load test
circuit
Figure 16. Unclamped inductive waveform
Figure 17. Switching time waveform
8/12
STS4DNFS30L
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at : www.st.com
9/12
Package mechanical data
STS4DNFS30L
SO-8 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
1.27
3.81
e
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.14
0.157
0.050
0.023
L
0.015
M
S
8 (max.)
10/12
STS4DNFS30L
Revision history
5
Revision history
.
Table 8.
Revision history
Revision
Date
Changes
21-Jun-2004
10-Nov-2006
26-Jan-2007
2
3
4
Complete version
The document has been reformatted
Typo mistakes on Table 1.
11/12
STS4DNFS30L
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2007 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
12/12
相关型号：
STS4DPFS20L
P-CHANNEL 20V - 0.07ohm - 4A SO-8 STripFET⑩ MOSFET PLUS SCHOTTKY RECTIFIER
STMICROELECTR
STS4DPFS2LS
P-CHANNEL 20V - 0.06ohm - 4A SO-8 STripFET⑩ MOSFET PLUS SCHOTTKY RECTIFIER
STMICROELECTR
STS4DPFS30L
P-CHANNEL 30V - 0.07ohm - 4A SO-8 STripFET⑩ MOSFET PLUS SCHOTTKY RECTIFIER
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明