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STS4DPF20L [STMICROELECTRONICS]

DUAL P-CHANNEL 20V - 0.07 ohm - 4A SO-8 STripFET⑩ POWER MOSFET; 双P沟道20V - 0.07欧姆 - 4A SO- 8 STripFET⑩功率MOSFET
STS4DPF20L
型号： STS4DPF20L
厂家： ST    ST
描述：

DUAL P-CHANNEL 20V - 0.07 ohm - 4A SO-8 STripFET⑩ POWER MOSFET
双P沟道20V - 0.07欧姆 - 4A SO- 8 STripFET⑩功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管 PC
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STS4DPF20L  
DUAL P-CHANNEL 20V - 0.07 Ω - 4A SO-8  
STripFET™ POWER MOSFET  
V
R
I
D
TYPE  
DSS  
DS(on)  
STS4DPF20L  
20 V  
<0.08 Ω  
4 A  
■
■
TYPICAL R (on) = 0.07 Ω  
DS  
STANDARD OUTLINE FOR EASY  
AUTOMATED SURFACE MOUNT ASSEMBLY  
LOW THRESHOLD DRIVE  
■
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a remark-  
able manufacturing reproducibility.  
SO-8  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
BATTERY MANAGEMENT IN NOMADIC  
EQUIPMENT  
■
POWER MANAGEMENT IN CELLULAR  
PHONES  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
20  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 kΩ)  
20  
V
DGR  
GS  
V
GS  
Gate- source Voltage  
± 16  
V
Drain Current (continuos) at T = 25°C Single Operation  
4
2.5  
A
A
C
I
D
Drain Current (continuos) at T = 100°C Single Operation  
C
I
(•)  
DM  
Drain Current (pulsed)  
16  
A
Total Dissipation at T = 25°C Dual Operation  
1.6  
2
W
W
C
P
tot  
Total Dissipation at T = 25°C Single Operation  
C
(•) Pulse width limited by safe operating area.  
Note: For the P-CHANNEL MOSFET actual polarity of voltages and  
current has to be reversed  
February 2002  
1/8  
.
STS4DPF20L  
THERMAL DATA  
Rthj-amb  
(*)Thermal Resistance Junction-ambient  
Single Operation  
Dual Operating  
62.5  
78  
-55 to150  
°C/W  
°C/W  
°C  
T
Thermal Operating Junction-ambient  
Storage Temperature  
j
T
stg  
-55 to 150  
°C  
(*)  
2
When Mounted on 0.5 in pad of 2 oz.copper  
ELECTRICAL CHARACTERISTICS (T  
= 25 °C UNLESS OTHERWISE SPECIFIED)  
CASE  
OFF  
Symbol  
Parameter  
Drain-source  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
I
= 250 µA, V = 0  
20  
V
V
D
GS  
(BR)DSS  
Breakdown Voltage  
V
= Max Rating  
= Max Rating T = 125°C  
Zero Gate Voltage  
1
10  
µA  
µA  
I
DS  
DSS  
Drain Current (V = 0)  
V
DS  
GS  
C
Gate-body Leakage  
V
GS  
= ± 16 V  
±100  
nA  
I
GSS  
Current (V = 0)  
DS  
(*)  
ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
GS(th)  
V
= V  
I
= 250 µA  
D
Gate Threshold Voltage  
1
1.6  
2.5  
V
DS  
GS  
V
V
= 10 V  
= 4.5 V  
I
= 2 A  
= 2 A  
Static Drain-source On  
Resistance  
0.070  
0.085  
0.08  
0.10  
Ω
Ω
R
GS  
D
DS(on)  
I
GS  
D
DYNAMIC  
Symbol  
Parameter  
Test Conditions  
= 15V = 2 A  
Min.  
Typ.  
Max.  
Unit  
(*)  
V
V
I
D
g
fs  
Forward Transconductance  
10  
S
DS  
DS  
= 25V, f = 1 MHz, V = 0  
C
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
1350  
490  
130  
pF  
pF  
pF  
iss  
GS  
C
oss  
C
rss  
2/8  
STS4DPF20L  
ELECTRICAL CHARACTERISTICS (continued)  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
= 15 V  
Min.  
Typ.  
Max.  
Unit  
V
R
I
= 2 A  
D
Turn-on Delay Time  
Rise Time  
25  
35  
ns  
ns  
t
DD  
d(on)  
= 4.7 Ω  
V
GS  
= 4.5 V  
t
r
G
(Resistive Load, Figure 1)  
Q
V
= 24V I = 4A V =5V  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
12.5  
5
3
16  
nC  
nC  
nC  
g
DD  
D
GS  
Q
gs  
Q
(See test circuit, Figure 2)  
gd  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Min.  
Typ.  
Max.  
Unit  
V
R
= 15 V  
I
D
= 2 A  
Turn-off Delay Time  
Fall Time  
125  
35  
ns  
ns  
t
DD  
d(off)  
= 4.7Ω,  
V
GS  
= 4.5 V  
t
G
f
(Resistive Load, Figure 1)  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Typ.  
Max.  
Unit  
I
Source-drain Current  
Source-drain Current (pulsed)  
4
16  
A
A
SD  
( )  
•
I
SDM  
(*)  
I
I
= 4 A  
V
= 0  
GS  
V
Forward On Voltage  
1.2  
V
SD  
SD  
SD  
t
= 4 A  
di/dt = 100A/µs  
T = 150°C  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
45  
36  
1.6  
ns  
nC  
A
rr  
Q
V
= 15 V  
rr  
DD  
j
I
(See test circuit, Figure 3)  
RRM  
(*)  
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
•)Pulse width limited by safe operating area.  
Thermal Impedance  
Safe Operating Area  
3/8  
STS4DPF20L  
Output Characteristics  
Transfer Characteristics  
Transconductance  
Static Drain-source On Resistance  
Gate Charge vs Gate-source Voltage  
Capacitance Variations  
4/8  
STS4DPF20L  
Normalized Gate Threshold Voltage vs Temperature  
Normalized on Resistance vs Temperature  
Source-drain Diode Forward Characteristics  
.
.
.
5/8  
STS4DPF20L  
Fig. 1: Switching Times Test Circuits For Resistive  
Fig. 2: Gate Charge test Circuit  
Load  
Fig. 3: Test Circuit For Diode Recovery Behaviour  
6/8  
STS4DPF20L  
SO-8 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
1.75  
0.25  
1.65  
0.85  
0.48  
0.25  
0.5  
MIN.  
MAX.  
0.068  
0.009  
0.064  
0.033  
0.018  
0.010  
0.019  
A
a1  
a2  
a3  
b
0.1  
0.003  
0.65  
0.35  
0.19  
0.25  
0.025  
0.013  
0.007  
0.010  
b1  
C
c1  
D
45 (typ.)  
4.8  
5.8  
5.0  
6.2  
0.188  
0.228  
0.196  
0.244  
E
e
1.27  
3.81  
0.050  
0.150  
e3  
F
3.8  
0.4  
4.0  
1.27  
0.6  
0.14  
0.157  
0.050  
0.023  
L
0.015  
M
S
8 (max.)  
0016023  
7/8  
STS4DPF20L  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is registered trademark of STMicroelectronics  
2002 STMicroelectronics - All Rights Reserved  
All other names are the property of their respective owners.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
8/8  

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