STS4DPF30L [STMICROELECTRONICS]
DUAL P-CHANNEL 30V - 0.07 ohm - 4A SO-8 STripFET⑩ POWER MOSFET; 双P沟道30V - 0.07欧姆 - 4A SO- 8 STripFET⑩功率MOSFET![STS4DPF30L](http://pdffile.icpdf.com/pdf1/p00048/img/icpdf/STS4DPF30L_252040_icpdf.jpg)
型号: | STS4DPF30L |
厂家: | ![]() |
描述: | DUAL P-CHANNEL 30V - 0.07 ohm - 4A SO-8 STripFET⑩ POWER MOSFET |
文件: | 总6页 (文件大小:111K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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STS4DPF30L
DUAL P-CHANNEL 30V - 0.07 Ω - 4A SO-8
STripFET™ POWER MOSFET
PRELIMINARY DATA
V
R
I
D
TYPE
DSS
DS(on)
STS4DPF30L
30 V
<0.08 Ω
4 A
■
■
TYPICAL R (on) = 0.07 Ω
DS
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
■
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
SO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
POWER MANAGEMENT IN CELLULAR
PHONES
DC-DC CONVERTER
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
30
Unit
V
V
DS
Drain-source Voltage (V = 0)
GS
V
DGR
Drain-gate Voltage (R = 20 kΩ)
30
V
GS
V
Gate- source Voltage
± 16
V
GS
Drain Current (continuous) at T = 25°C Single Operation
4
2.5
A
A
C
I
D
Drain Current (continuous) at T = 100°C Single Operation
C
I
(•)
DM
Drain Current (pulsed)
16
A
Total Dissipation at T = 25°C Dual Operation
2.0
1.6
W
W
C
P
tot
Total Dissipation at T = 25°C Single Operation
C
(•) Pulse width limited by safe operating area.
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
April 2002
1/6
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STS4DPF30L
THERMAL DATA
Rthj-amb
(*)Thermal Resistance Junction-ambient
Single Operation
Dual Operating
78
62.5
-55 to150
-55 to 150
°C/W
°C/W
°C
T
Thermal Operating Junction-ambient
Storage Temperature
j
T
stg
°C
(*)
2
When Mounted on 1 inch FR-4 board, 2 oz of Cu and t 10 sec.
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
I
= 250 µA, V = 0
30
V
V
D
GS
(BR)DSS
Breakdown Voltage
V
= Max Rating
= Max Rating T = 125°C
Zero Gate Voltage
1
10
µA
µA
I
DS
DSS
Drain Current (V = 0)
V
DS
GS
C
Gate-body Leakage
V
GS
= ± 16 V
±100
nA
I
GSS
Current (V = 0)
DS
(*)
ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
V
= V
I
= 250 µA
D
Gate Threshold Voltage
1
V
DS
GS
V
V
= 10 V
= 4.5 V
I
I
= 2 A
= 2 A
Static Drain-source On
Resistance
0.070
0.085
0.08
0.10
Ω
Ω
R
GS
D
D
DS(on)
GS
DYNAMIC
Symbol
Parameter
Test Conditions
= 15V = 2 A
Min.
Typ.
Max.
Unit
(*)
V
V
I
D
g
fs
Forward Transconductance
10
S
DS
DS
= 25V, f = 1 MHz, V = 0
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
1350
490
130
pF
pF
pF
iss
GS
C
oss
C
rss
2/6
STS4DPF30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
= 15 V
Min.
Typ.
Max.
Unit
V
R
I
= 2 A
D
Turn-on Delay Time
Rise Time
25
35
ns
ns
t
DD
d(on)
= 4.7 Ω
V
GS
= 4.5 V
t
r
G
(Resistive Load, Figure 1)
Q
V
= 24 V I = 4 A V = 5 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
12.5
5
3
16
nC
nC
nC
g
DD
D
GS
Q
gs
Q
(See test circuit, Figure 2)
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Min.
Typ.
Max.
Unit
V
R
= 15 V
I
D
= 2 A
Turn-off Delay Time
Fall Time
125
35
ns
ns
t
DD
d(off)
= 4.7Ω,
V
GS
= 4.5 V
t
G
f
(Resistive Load, Figure 1)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I
Source-drain Current
Source-drain Current (pulsed)
4
16
A
A
SD
( )
•
I
SDM
(*)
I
I
= 4 A
V
= 0
GS
V
Forward On Voltage
1.2
V
SD
SD
SD
t
= 4 A
di/dt = 100A/µs
T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
45
36
1.6
ns
nC
A
rr
Q
V
= 15 V
rr
DD
j
I
(See test circuit, Figure 3)
RRM
(*)
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
•)Pulse width limited by safe operating area.
3/6
STS4DPF30L
Fig. 1: Switching Times Test Circuits For Resistive
Fig. 2: Gate Charge test Circuit
Load
Fig. 3: Test Circuit For Diode Recovery Behaviour
4/6
STS4DPF30L
SO-8 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
e
1.27
3.81
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.14
0.157
0.050
0.023
L
0.015
M
S
8 (max.)
0016023
5/6
STS4DPF30L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2002 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
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6/6
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