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STS4DNF30L [STMICROELECTRONICS]

DUAL N-CHANNEL 30V - 0.039ohm - 4A SO-8 STripFET⑩ POWER MOSFET; 双N沟道30V - 0.039ohm - 4A SO- 8 STripFET⑩功率MOSFET
STS4DNF30L
型号： STS4DNF30L
厂家： ST    ST
描述：

DUAL N-CHANNEL 30V - 0.039ohm - 4A SO-8 STripFET⑩ POWER MOSFET
双N沟道30V - 0.039ohm - 4A SO- 8 STripFET⑩功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管
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STS4DNF30L  
DUAL N-CHANNEL 30V - 0.039Ω - 4A SO-8  
STripFET™ POWER MOSFET  
PRELIMINARY DATA  
V
DSS  
R
I
D
TYPE  
DS(on)  
STS4DNF30L  
30 V  
< 0.050 Ω  
4 A  
■
TYPICAL R  
= 0.039 Ω  
DS(on)  
■
■
STANDARD OUTLINE FOR EASY  
AUTOMATED SURFACE MOUNT ASSEMBLY  
LOW THRESHOLD DRIVE  
DESCRIPTION  
SO-8  
This Power MOSFET is the second generation of  
STMicroelectronics unique “Single Feature Size™”  
strip-based process. The resulting transistor shows  
extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a remarkable  
manufacturing reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
BATTERY MANAGMENT IN NOMADIC  
EQUIPMENT  
■
■
POWER MANAGMENT IN CELLULAR PHONES  
DC MOTOR DRIVE  
MOSFET ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
30  
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
GS  
V
Drain-gate Voltage (R = 20 kΩ)  
30  
V
DGR  
GS  
V
Gate- source Voltage  
± 16  
4
V
GS  
I
I
Drain Current (continuous) at T = 25°C  
A
D
D
C
Drain Current (continuous) at T = 100°C  
2.5  
16  
A
C
I
(●)  
Drain Current (pulsed)  
A
DM  
P
TOT  
Total Dissipation at T = 25°C Dual Operation  
2
W
C
(●)Pulse width limited by safe operating area  
.
August 2002  
1/6  
STS4DNF30L  
THERMAL DATA  
Rthj-amb  
(*)Thermal Resistance Junction-ambient Max  
62.5  
-55 to 150  
150  
°C/W  
°C  
T
stg  
Storage Temperature Range  
Junction Temperature  
T
°C  
l
(*) Mounted on FR-4 board (t≤ 10sec)  
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)  
OFF  
Symbol  
Parameter  
Drain-source  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
I
= 250 µA, V = 0  
30  
V
(BR)DSS  
D
GS  
Breakdown Voltage  
I
Zero Gate Voltage  
V
V
V
= Max Rating  
DS  
1
µA  
µA  
nA  
DSS  
Drain Current (V = 0)  
GS  
= Max Rating, T = 125 °C  
10  
DS  
GS  
C
I
Gate-body Leakage  
= ± 16 V  
±100  
GSS  
Current (V = 0)  
DS  
ON (1)  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
V
R
V
V
V
= V , I = 250µA  
Gate Threshold Voltage  
1
GS(th)  
DS  
GS  
GS  
GS  
D
Static Drain-source On  
Resistance  
= 10V, I = 2 A  
0.039  
0.046  
0.050  
0.060  
Ω
DS(on)  
D
= 4.5V, I = 2 A  
Ω
D
DYNAMIC  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
g
(1)  
Forward Transconductance  
V
> I  
x R  
DS(on)max,  
1
3
S
fs  
DS  
D(on)  
I
= 2 A  
D
C
C
V
= 25V, f = 1 MHz, V = 0  
DS GS  
Input Capacitance  
Output Capacitance  
330  
90  
pF  
pF  
pF  
iss  
oss  
C
rss  
Reverse Transfer  
Capacitance  
40  
2/6  
STS4DNF30L  
ELECTRICAL CHARACTERISTICS (CONTINUED)  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
t
V
V
= 15 V, I = 2 A R = 4.7Ω  
= 4.5 V  
Turn-on Delay Time  
11  
ns  
d(on)  
DD  
GS  
D
G
t
Rise Time  
100  
ns  
r
(see test circuit, Figure 3)  
Q
V
V
= 24 V, I = 4 A,  
= 10 V  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
6.5  
3.6  
2
9
nC  
nC  
nC  
g
DD  
GS  
D
Q
gs  
Q
gd  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
t
Turn-off Delay Time  
Fall Time  
V
= 15 V, I = 2 A,  
25  
22  
ns  
ns  
d(off)  
DD  
D
t
f
R = 4.7Ω, V = 4.5 V  
G GS  
(see test circuit, Figure 3)  
t
Off-Voltage Rise Time  
Fall Time  
Cross-over Time  
V
= 24 V, I = 4 A,  
22  
55  
75  
ns  
ns  
ns  
r(Voff)  
DD  
D
t
f
R = 4.7Ω, V = 4.5 V  
G GS  
(see test circuit, Figure 5)  
t
c
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
4
Unit  
A
I
Source-drain Current  
SD  
I
(2)  
(1)  
Source-drain Current (pulsed)  
Forward On Voltage  
16  
A
SDM  
V
I
I
= 4 A, V = 0  
1.2  
V
SD  
SD  
SD  
GS  
t
= 4 A, di/dt = 100A/µs,  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
30  
18  
ns  
nC  
A
rr  
V
= 20 V, T = 150°C  
j
DD  
Q
rr  
RRM  
(see test circuit, Figure 5)  
I
1.2  
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
2. Pulse width limited by safe operating area.  
3/6  
STS4DNF30L  
Fig. 1: Unclamped Inductive Load Test Circuit  
Fig. 2: Unclamped Inductive Waveform  
Fig. 3: Switching Times Test Circuits For  
Fig. 4: Gate Charge test Circuit  
Resistive Load  
Fig. 5: Test Circuit For Inductive Load Switching  
And Diode Recovery Times  
4/6  
STS4DNF30L  
SO-8 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
1.75  
0.25  
1.65  
0.85  
0.48  
0.25  
0.5  
MIN.  
MAX.  
0.068  
0.009  
0.064  
0.033  
0.018  
0.010  
0.019  
A
a1  
a2  
a3  
b
0.1  
0.003  
0.65  
0.35  
0.19  
0.25  
0.025  
0.013  
0.007  
0.010  
b1  
C
c1  
D
45 (typ.)  
4.8  
5.8  
5.0  
6.2  
0.188  
0.228  
0.196  
0.244  
E
e
1.27  
3.81  
0.050  
0.150  
e3  
F
3.8  
0.4  
4.0  
1.27  
0.6  
0.14  
0.157  
0.050  
0.023  
L
0.015  
M
S
8 (max.)  
0016023  
5/6  
STS4DNF30L  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a trademark of STMicroelectronics  
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
6/6  

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