STS4DNF60L [STMICROELECTRONICS]
N - CHANNEL 60V - 0.045ohm - 4A SO-8 STripFET POWER MOSFET; N - CHANNEL 60V - 0.045ohm - 4A SO- 8的STripFET功率MOSFET
| 型号： | STS4DNF60L |
| 厂家： | 
ST |
| 描述： | N - CHANNEL 60V - 0.045ohm - 4A SO-8 STripFET POWER MOSFET |
| 文件： | 总5页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STS4DNF60L
®
N - CHANNEL 60V - 0.045Ω - 4A SO-8
STripFET POWER MOSFET
PRELIMINARY DATA
TYPE
STS4DNF60L
VDSS
RDS(on)
< 0.055 Ω
ID
4 A
60 V
■
■
TYPICAL RDS(on) = 0.045 Ω
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
■
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique " Single Feature
Size
" strip-based process. The resulting
SO-8
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
DC MOTOR DRIVE
DC-DC CONVERTERS
BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
■
POWER MANAGMENT IN
PORTABLE/DESKTOP PCs
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
Parameter
Value
60
Unit
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
V
V
V
A
VDGR
VGS
60
± 20
4
ID
Drain Current (continuous) at Tc = 25 oC
Single Operation
o
Drain Current (continuous) at Tc = 100 C
2.5
A
Single Operation
IDM(•)
Drain Current (pulsed)
16
A
o
Ptot
Total Dissipation at Tc = 25 C Dual Operation
2
1.6
W
W
o
Total Dissipation at Tc = 25 C Single Operation
(•) Pulse width limited by safe operating area
1/5
December 1998
STS4DNF60L
THERMAL DATA
Rthj-amb *Thermal Resistance Junction-ambient Single Operation
Dual Operation
78
62.5
150
oC/W
oC/W
oC
Maximum Operating Junction Temperature
T
j
Storage Temperature
-55 to 150
oC
T
stg
(*)
≤ 10sec)
Mounted on FR-4 board (t
(Tcase = 25 oC unless otherwise specified)
ELECTRICAL CHARACTERISTICS
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
60
V
I
D = 250 µA VGS = 0
IDSS
IGSS
VDS = Max Rating
1
10
µA
µA
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
± 100
nA
VGS = ± 20 V
ON (
)
Symbol
VGS(th)
Parameter
Test Conditions
DS = VGS ID = 250 µA
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
1
1.7
2.5
V
V
RDS(on)
Static Drain-source On VGS = 10 V ID = 2 A
Resistance VGS = 4.5 V ID = 2 A
0.045 0.055
Ω
Ω
0.05
0.065
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
GS = 10 V
20
A
V
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID = 2 A
Min.
Typ.
Max.
Unit
gfs ( )
7
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS = 25 V f = 1 MHz VGS = 0 V
1250
130
26
pF
pF
pF
2/5
STS4DNF60L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
VDD = 15 V
ID = 2 A
TBD
TBD
ns
ns
Rise Time
RG = 4.7 Ω
VGS = 4.5 V
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 48 V
ID = 4 A VGS = 4.5 V
15
4
4
25
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
DD = 48 V ID = 4 A
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
V
TBD
ns
ns
ns
RG = 4.7 Ω VGS = 4.5 V
SOURCE DRAIN DIODE
Symbol
Parameter
Source-drain Current
Test Conditions
Min.
Typ.
Max.
Unit
ISD
4
16
A
A
ISDM(• ) Source-drain Current
(pulsed)
VSD ( ) Forward On Voltage
ISD = 4 A VGS = 0
1.2
V
trr
Reverse Recovery
Time
TBD
TBD
ns
I
SD = 4 A
di/dt = 100 A/µs
Tj = 150 C
o
Vr = 20 V
Qrr
Reverse Recovery
Charge
Reverse Recovery
Current
nC
A
IRRM
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/5
STS4DNF60L
SO-8 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
e
1.27
3.81
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.14
0.157
0.050
0.023
L
0.015
M
S
8 (max.)
0016023
4/5
STS4DNF60L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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.
5/5
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