STS4622 [SAMHOP]
Dual N-Channel Enhancement Mode Field E ffect Trans is tor; 双N沟道增强模式域E ffect是横贯器
| 型号： | STS4622 |
| 厂家： | 
SAMHOP MICROELECTRONICS CORP. |
| 描述： | Dual N-Channel Enhancement Mode Field E ffect Trans is tor |
| 文件： | 总8页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S TS 4622
S amHop Microelectronics Corp.
Jun, 06 2006
Dual N-Channel Enhancement Mode Field Effect Transistor
PR ODUCT S UMMAR Y
FE ATUR E S
S uper high dense cell design for low R DS (ON).
R ugged and reliable.
VDS S
ID
R DS (ON) ( m
:
) Max
65 @ VGS = 10V
85 @ VGS =4.5V
40V
3A
S OT-26 package.
D2
D1
S OT26
Top View
G1
S 2
G2
D1
S 1
D2
6
5
4
1
2
3
G2
G1
S 2
S 1
AB S OLUTE MAXIMUM R ATINGS (T =25 C unles s otherwis e noted)
A
Limit
Unit
V
Parameter
S ymbol
Drain-S ource Voltage
40
20
V
V
DS
GS
V
Gate-S ource Voltage
I
D
3
A
Drain Current-Continuous @ T
-Pulsed b
J=25 C
A
I
DM
12
A
Drain-S ource Diode Forward Current
Maximum Power Dissipation a
1.25
I
S
P
D
W
C
1.25
Operating Junction and S torage
Temperature R ange
T
J
, TS TG
-55 to 150
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
C
/W
R
thJA
100
1
S TS 4622
E LE C TR IC AL C HAR AC TE R IS TIC S (T
A
25 C unless otherwise noted)
=
Typ C Max
Parameter
Condition
Min
Unit
S ymbol
OFF CHAR ACTE R IS TICS
V
GS 0V, ID 250uA
=
=
Drain-S ource Breakdown Voltage
40
V
BVDS S
uA
nA
I
I
DS S
GS S
V
V
DS 32V, VGS 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
1
=
=
GS
20V, VDS 0V
=
100
=
b
ON CHAR ACTE R IS TICS
1.8
53
66
V
GS (th)
1
3
V
Gate Threshold Voltage
V
DS =VGS , I
= 250uA
D
m-ohm
65
85
=
=
3A
V
V
V
V
GS 10V, I
GS = 4.5V, I
DS = 5V, VGS = 4.5V
D =3A
D
Drain-S ource On-S tate R esistance
R
DS (ON)
m-ohm
=
D
2A
10
On-S tate Drain Current
I
D(ON)
A
S
gFS
7
Forward Transconductance
=
DS
5V, I
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
330
50
P
P
P
F
F
F
C
IS S
V
DS =20V, VGS = 0V
Output Capacitance
C
C
OS S
R S S
f =1.0MH
Z
R everse Transfer Capacitance
28
S WITCHING CHAR ACTE R IS TICS c
7.9
4.6
17
Turn-On Delay Time
t
D(ON)
ns
ns
V
DD = 20V,
I
D
= 1A,
R ise Time
tr
V
R
R
GS = 10V,
Turn-Off Delay Time
tD(OFF)
ns
ns
L
= 20 ohm
GE N = 6 ohm
9.3
6.7
tf
Fall Time
Total Gate Charge
nC
nC
Q
g
V
DS =20V, I
GS =10V
D
= 3A,
Gate-S ource Charge
Gate-Drain Charge
0.9
1.6
Q
Q
gs
V
gd
nC
2
S TS 4622
E LE C TR IC AL C HAR AC TE R IS TIC S (T =25 C unless otherwise noted)
A
TypC Max
P arameter
DR AIN-S OUR C E DIODE C HAR AC TE R IS TIC S
C ondition
Min
Unit
V
S ymbol
b
5
Diode Forward Voltage
0.82
V
S D
V
G S = 0V, Is =1.25A
1.2
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
10
10
8
V
GS =10V
VGS =3.5V
8
VGS =4.5V
6
6
4
2
0
Tj=125 C
25 C
4
VGS =3V
2
0
-55 C
VGS =2.5V
2.5 3
0.0
0.7
1.4
2.1
2.8
3.5
4.2
0
0.5
1
1.5
2
VDS , Drain-to-S ource Voltage (V)
VGS , Gate-to-S ource Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
120
1.5
1.4
VGS =10V
ID=3A
100
80
VGS =4.5V
1.3
1.2
60
40
VGS =4.5V
ID=2A
VGS =10V
1.1
1.0
0
20
0
0
2
4
6
8
10
0
25
50
75
100
150
125
Tj( C)
ID, Drain Current (A)
Figure 3. On-R esistance vs. Drain Current
and Gate Voltage
Figure 4. On-R esistance Variation with
Temperature
3
S TS 4622
1.3
1.3
V
DS =VG S
ID=250uA
1.2
ID=250uA
1.2
1.1
1.1
1.0
0.9
1.0
0.9
0.8
0.7
0.8
0.7
0.6
-50 -25
0
25 50
75 100 125
-50 -25
0
25 50
75 100 125
Tj, Junction Temperature ( C )
Figure 5. G ate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
120
20
10
I
D
=3A
100
80
125 C
75 C
60
40
75 C
25 C
125 C
25 C
20
0
1
0
2
4
6
8
10
0.4
0.6
0.8
1.0
1.2
1.4
VGS , Gate-S ource Voltage (V)
V
S D, Body Diode Forward Voltage (V)
Figure 7. On-R esistance vs.
Gate-S ource Voltage
Figure 8. Body Diode Forward Voltage
Variation with S ource C urrent
4
S TS 4622
500
10
8
V
DS =20V
=3A
400
I
D
Ciss
300
6
4
200
100
Coss
2
0
Crss
0
0
5
10
15
20
25
30
8
0
1
2
3
4
5
6
7
VDS , Drain-to S ource Voltage (V)
Qg, Total G ate C harge (nC )
Figure 9. Capacitance
Figure 10. G ate C harge
100
50
t
i
10
1
(o
TD ff)
m
i
L
1
Tr
)
0
m
N
s
O
(
TD
Tf
R DS
1
n)
(o
0
0
m
s
1
1
s
10
1
D
C
V
G S =10V
,ID=1A
20V
S =
VD
0.1
S ingle P ulse
Tc=25 C
10V
VG S =
0.03
600
60 100 300
1
6
10
0.1
1
10 20
50
R g, G ate R esistance (
:
)
V
DS , Drain-S ource Voltage (V)
Figure 12. Maximum S afe
Operating Area
Figure 11.switching characteristics
5
S TS 4622
VDD
on
t
toff
d(off)
t
r
t
d(on)
t
R L
f
t
5
V IN
90%
90%
D
OUT
V
OUT
V
V
10%
10%
VGS
INVE R TE D
RGE N
G
90%
50%
50%
S
IN
10%
PULS E WIDTH
Figure 14. S witching Waveforms
Figure 13. S witching Test Circuit
1
0
1
1
0.5
0.2
DM
P
0.1
1
t
0
.
2
t
0.05
0.02
1. R thJA (t)=r (t) * R thJA
th
2. R JA=S ee Datasheet
3. TJM-TA = PDM* R thJA (t)
4. Duty Cycle, D=t1/t2
S
ingle
P
ulse
0.01
0
.0
1
0
.0000
1
0
.000
1
0
.00
1
0
.0
1
0
.1
1
1
0
1
00
1
000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
6
S TS 4622
PACKAGE OUTLINE DIME NS IONS
S OT26
7
S TS 4622
SOT 26 Tape and Reel Data
SOT 26 Carrier Tape
+0.10
0.00
+
3.50 0.05
О1.50
+
4.00 0.10
+
1.75 0.10
+
2.00 0.05
A
B
B
A
+
0.25 0.05
+
4.00
0.10
+0.10
0.00
О1.00
+
0.1
3.3
+
Ko 1.5 0.1
SECTION B-B
SECTION A-A
SOT 26 Reel
1.50
+
2.2 0.5
9.0 +1.5
-0
+
О13.5 0.5
SCALE 2:1
SOT 26
8
相关型号：
STS4DNFS30
N-channel - 30V - 0.044ohm - 4.5A SO-8 STripFET tm Power MOSFET plus schottky rectifier
STMICROELECTR
STS4DNFS30L
N-CHANNEL 30V - 0.044ohm - 4A SO-8 STripFET⑩ II MOSFET PLUS SCHOTTKY RECTIFIER
STMICROELECTR
STS4DNFS30L_07
N-channel 30V - 0.044ohm - 4A SO-8 STripFET TM MOSFET plus SCHOTTKY rectifier
STMICROELECTR
STS4DPFS20L
P-CHANNEL 20V - 0.07ohm - 4A SO-8 STripFET⑩ MOSFET PLUS SCHOTTKY RECTIFIER
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明