STS4300 [SAMHOP]
N-Channel E nhancement Mode Field Effect Transistor; N沟道é nhancement模式场效应晶体管
| 型号： | STS4300 |
| 厂家： | 
SAMHOP MICROELECTRONICS CORP. |
| 描述： | N-Channel E nhancement Mode Field Effect Transistor |
| 文件： | 总8页 (文件大小：587K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S TS 4300
S amHop Microelectronics C orp.
AP R .25 2006
N-C hannel E nhancement Mode Field E ffect Trans is tor
PR ODUCT S UMMAR Y
FE ATUR E S
S uper high dense cell design for low R DS (ON).
R ugged and reliable.
VDS S
ID
R DS (ON) ( m
Ω
) Max
62 @ VG S = 10V
80 @ VG S =4.5V
40V
3.5A
S OT-23 package.
D
S OT-23
G
S
ABS OLUTE MAXIMUM R ATING S (T
P arameter
A
=25 C unless otherwise noted)
Limit
Unit
V
S ymbol
Drain-S ource Voltage
V
V
DS
G S
40
20
V
G ate-S ource Voltage
25 C
Drain C urrent-C ontinuous @ Ta
70 C
3.5
2.7
A
A
I
D
-P ulsed a
I
DM
15
A
A
Drain-S ource Diode Forward C urrent
I
S
1.25
Ta= 25 C
Maximum P ower Dissipation
Ta=70 C
1.25
0.76
P
D
W
C
Operating J unction and S torage
Temperature R ange
-55 to 150
T
R
J
, TS TG
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, J unction-to-Ambient a
C
/W
J A
100
1
S TS 4300
E LE C T R IC AL C HAR AC T E R IS T IC S (T
A
25 C unless otherwise noted)
=
Typ C Max
P arameter
C ondition
Min
Unit
S ymbol
OFF C HAR AC TE R IS TIC S
V
G S 0V, I
=
D 250uA
=
Drain-S ource Breakdown Voltage
40
V
BVDS S
uA
nA
I
I
DS S
G S S
V
V
DS 32V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
1
=
=
G S
20V, VDS 0V
=
100
=
b
ON C HAR AC TE R IS TIC S
1.6
54
68
V
G S (th)
1
3.0
62
80
V
G ate Threshold Voltage
V
DS =VG S , I
= 250uA
D
m-ohm
=
=
3.5A
V
V
V
V
G S 10V, I
D
Drain-S ource On-S tate R esistance
R
DS (ON)
m-ohm
=
G S = 4.5V, I
D
2.8A
10
DS = 5V, VG S = 4.5V
D =3.5A
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
9
Forward Transconductance
=
5V, I
DS
c
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
320
55
P
P
P
F
F
F
C
IS S
V
DS =15V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
f =1.0MH
Z
R everse Transfer C apacitance
32
S WITC HING C HAR AC TE R IS TIC S c
6.6
3.9
15.7
3.3
6
Turn-On Delay Time
t
D(ON)
ns
ns
V
DD = 15V,
= 1A,
G S = 10V,
I
D
R ise Time
tr
V
R
R
Turn-Off Delay Time
tD(OFF)
ns
ns
L
= 15 ohm
G E N = 6 ohm
tf
Fall Time
Total G ate C harge
nC
nC
Q
g
V
V
DS =15V, I
G S =10V
D
= 3.5A,
G ate-S ource C harge
G ate-Drain C harge
0.8
1.5
Q
Q
gs
gd
nC
2
S TS 4300
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
C
Typ Max
P arameter
C ondition
Min
Unit
V
S ymbol
a
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
Diode F orward Voltage
0.82
V
S D
V
G S = 0V, Is = 1.25A
1.3
Notes
a.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
b.G uaranteed by design, not subject to production testing.
10
10
VG S =4V
8
8
6
VG S =3.5V
V
G S =4.5V
6
Tj=125 C
V
G S =10V
4
2
0
4
VG S =3V
-55 C
25 C
2
0
0
0.7
1.4
2.1
2.8
3.5
4.2
0
0.5
1
2
3
1.5
2.5
VDS , Drain-to-S ource Voltage (V)
VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
90
2.0
1.8
1.6
1.4
1.2
1.0
0.8
75
60
VG S =4.5V
VG S =10V
V
I
G S =10V
=3.5A
D
45
30
V
G S =4.5V
=2.8A
15
0
I
D
0
0
25
50
2
4
6
8
10
75
125
100
150 175
Tj( C )
ID, Drain C urrent (A)
T j, J unction T emperature ( C )
Figure 3. On-R esistance vs. Drain C urrent
and G ate Voltage
Figure 4. On-R esistance Variation with
Drain C urrent and Temperature
3
S TS 4300
1.15
1.10
1.3
V
DS =V G S
ID=250uA
1.2
I
D=250uA
1.1
1.0
0.9
0.8
1.05
1.00
0.95
0.90
0.85
0.7
0.6
6
0
-50
25 50
-25
125 150
75 100
-50 -25
0
25 50 75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
180
20.0
ID=3.5A
150
120
125 C
25 C
10.0
125 C
75 C
90
60
75 C
25 C
30
0
1.0
0
2
4
6
8
10
0.6
0.8
1.0
1.2
1.4
1.6
VG S , G ate- S ouVoltage (V)
V
S D, B ody Diode F orward V oltage (V )
Figure 7. On-R esistance vs.
G ate-S ource Voltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
S TS 4300
420
10
8
C iss
V
DS =15V
350
I
D=3.5A
280
210
140
6
4
C oss
2
0
6
70
C rss
0
0
5
10
15
20
25
30
0
1
2
4
5
6
7
8
3
VDS , Drain-to S ource Voltage (V)
Qg, T otal G ate C harge (nC )
Figure 9. C apacitance
50
220
t
i
m
i
10
1
L
)
N
100
60
O
(
R DS
1
m
s
1
TD(off)
0
Tr
m
s
1
s
10
TD(on)
Tf
D
C
V
G S =10V
0.1
V DS =15V ,ID=1A
V G S =10V
S ingle P ulse
T c=25 C
1
0.03
600
60 100 300
0.1
1
10 20
50
1
6
10
V
DS , Drain-S ource V oltage (V )
R g, G ate R esistance (
Ω
)
F igure 10. Maximum S afe
Operating Area
F igure 11.switching characteristics
5
S T S 4300
VDD
on
t
toff
d(off)
t
r
t
d(on)
t
R L
f
t
5
V IN
90%
10%
90%
D
OUT
V
OUT
V
V
10%
VG S
INVE R TE D
R G E N
G
90%
50%
50%
S
IN
10%
P ULS E WIDTH
Figure 12. S witching Waveforms
Figure 11. S witching Test C ircuit
10
1
0.5
0.2
DM
P
0.1
1
t
0.1
2
t
0.05
0.02
1. R thJ A (t)=r (t) * R thJ A
th
2. R J A=S ee Datasheet
3. TJ M-TA = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
Single Pulse
0.001
0.01
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
6
S TS 4300
A
M
G
F
L
J
B
C
I
H
E
D (TYP.)
2.70
2.40
1.40
0.35
0
3.10
2.80
1.60
0.50
0.10
0.55
0.106
0.094
0.122
0.110
0.063
0.020
0.004
0.022
0.055
0.014
0
0.45
F
0.018
1.90 REF.
0.075 REF.
G
1.00
0.10
1.30
0.20
0.051
0.008
-
0.039
0.004
0.016
I
-
0.40
0.45
0°
J
L
M
0.033
0°
0.045
10°
1.15
10°
7
S TS 4300
SOT-23 Tape and Reel Data
SOT-23 Carrier Tape
UNIT:㎜
T
PACKAGE
SOT-23
E
E1
E2
P0
P1
P2
A0
D0
D1
B0
K0
8.00
+0.30
-0.10
3.50
±0.05
3.00
±0.10
∮1.00
+0.25
1.75
±0.10
4.00
±0.10
4.00
±0.10
0.20
±0.02
3.20
±0.10
1.33
±0.10
∮1.50
+0.10
2.00
±0.05
SOT-23 Reel
UNIT:㎜
TAPE SIZE
REEL SIZE
G
R
W1
S
M
N
V
W
H
K
∮178
±1
∮60
±1
9.00
±0.5
12.00
±0.5
10.5
2.00
±0.5
∮13.5
±0.5
∮10.0
18.00
5.00
8㎜
∮178
8
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