IXTK5N250 [LITTELFUSE]
Power Field-Effect Transistor,;
| 型号： | IXTK5N250 |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总6页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
High Voltage Power
MOSFET w/ Extended
FBSOA
VDSS
ID25
RDS(on) < 8.8Ω
= 2500V
= 5A
IXTK5N250
IXTX5N250
N-Channel Enhancement Mode
Avalanche Rated
Guaranteed FBSOA
TO-264 (IXTK)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
2500
2500
V
V
G
D
S
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
VGSS
VGSM
Continuous
Transient
±30
±40
V
V
Tab
ID25
IDM
TC = 25°C
5
A
A
PLUS247 (IXTX)
TC = 25°C, Pulse Width Limited by TJM
20
IA
TC = 25°C
TC = 25°C
2.5
2.5
A
J
EAS
G
D
PD
TC = 25°C
960
W
Tab
S
TJ
-55 to +150
150
°C
°C
°C
TJM
Tstg
G = Gate
S = Source
D
= Drain
Tab = Drain
-55 to +150
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
Md
FC
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
Nm/lb.in.
N/lb.
Features
20..120 /4.5..27
Weight
TO-264
PLUS247
10
6
g
g
z Avalanche Rated
z Fast Intrinsic Diode
z Guaranteed FBSOA at 75°C
z Low Package Inductance
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
(TJ = 25°C, Unless Otherwise Specified)
Advantages
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 1mA
VGS = ±30V, VDS = 0V
VDS = 2kV, VGS = 0V
2500
2.0
V
V
z
Easy to Mount
Space Savings
5.0
z
±200 nA
IDSS
50 μA
4 mA
Applications
TJ = 125°C
z High Voltage Power Supplies
z Capacitor Discharge
z Pulse Circuits
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
8.8
Ω
DS100280(08/10)
© 2010 IXYS CORPORATION, All Rights Reserved
IXTK5N250
IXTX5N250
Symbol
Test Conditions
Characteristic Values
TO-264 Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 50V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
3.0
4.5
6.0
S
Ciss
Coss
Crss
8560
315
90
pF
pF
pF
td(on)
tr
td(off)
tf
33
20
90
44
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Terminals: 1 - Gate
2 - Drain
RG = 1Ω (External)
3 - Source
4 - Drain
Millimeter
Inches
Qg(on)
Qgs
200
28
nC
nC
nC
Dim.
Min.
Max.
Min.
Max.
VGS = 10V, VDS = 1000V, ID = 0.5 • ID25
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
Qgd
70
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.021
1.020
.780
.056
.106
.122
.033
1.030
.786
RthJC
RthCS
0.13 °C/W
°C/W
0.15
c
0.53
0.83
D
25.91 26.16
E
e
19.81 19.96
5.46 BSC
.215 BSC
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
K
Safe Operating Area Specification
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Symbol
SOA
Test Conditions
Characteristic Values
Min. Typ. Max.
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
S
T
3.81
1.78
6.04
1.57
4.32
2.29
6.30
1.83
.150
.070
.238
.062
.170
.090
.248
.072
VDS = 2000V, ID = 0.11A, TC = 75°C, tp = 3s 220
W
PLUS247TM Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
5
A
A
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
20
IF = IS, VGS = 0V, Note 1
1.5
V
IF = 2.5A, -di/dt = 100A/μs, VR = 100V
1.2
μs
Terminals: 1 - Gate
2 - Drain
3 - Source
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTK5N250
IXTX5N250
Fig. 2. Output Characteristics @ TJ = 125ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
2.5
2
5
4.5
4
VGS = 10V
VGS = 10V
3.5
3
5V
4V
1.5
1
2.5
2
4V
3V
1.5
1
3V
0.5
0
0.5
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
VDS - Volts
VDS - Volts
Fig. 3. RDS(on) Normalized to ID = 2.5A Value vs.
Junction Temperature
Fig. 4. RDS(on) Normalized to ID = 2.5A Value vs.
Drain Current
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = 10V
VGS = 10V
TJ = 125ºC
I D = 5A
I D = 2.5A
TJ = 25ºC
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TJ - Degrees Centigrade
Fig. 5. Maximum Drain Current vs.
Case Temperature
Fig. 6. Input Admittance
5
4.5
4
6
5
4
3
2
1
0
3.5
3
TJ = 125ºC
25ºC
2.5
2
- 40ºC
1.5
1
0.5
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
VGS - Volts
© 2010 IXYS CORPORATION, All Rights Reserved
IXTK5N250
IXTX5N250
Fig. 7. Transconductance
Fig. 8. Forward Voltage Drop of Intrinsic Diode
16
14
12
10
8
8
7
6
5
4
3
2
1
0
TJ = - 40ºC
25ºC
125ºC
6
4
TJ = 125ºC
2
TJ = 25ºC
0.9
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1.0
1.1
1.2
1.3
ID - Amperes
VSD - Volts
Fig. 10. Capacitance
Fig. 9. Gate Charge
10
8
100,000
10,000
1,000
100
VDS = 1000V
= 1 MHz
f
I
D = 2.5A
C
I G = 10mA
iss
6
C
oss
4
2
C
rss
10
0
0
5
10
15
20
25
30
35
40
0
20
40
60
80
100
120
140
160
180
200
220
VDS - Volts
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
@ TC = 75ºC
Fig. 11. Forward-Bias Safe Operating Area
@ TC = 25ºC
100
10
1
100
10
1
RDS(on) Limit
RDS(on) Limit
25µs
100µs
1ms
100µs
1ms
10ms
10ms
TJ = 150ºC
TJ = 150ºC
100ms
TC = 25ºC
TC = 75ºC
100ms
Single Pulse
Single Pulse
DC
DC
0.1
0.1
100
1,000
10,000
100
1,000
VDS - Volts
10,000
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTK5N250
IXTX5N250
Fig. 13. Maximum Transient Thermal Impedance
aaaaaa
0.300
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: IXT_5N250(9P)8-13-10-A
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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