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IXTK80N30L2 [LITTELFUSE]

Power Field-Effect Transistor,;
IXTK80N30L2
型号： IXTK80N30L2
厂家： LITTELFUSE    LITTELFUSE
描述：

Power Field-Effect Transistor,
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中文：  中文翻译
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Advance Technical Information  
LinearL2TM  
Power MOSFET  
w/ Extended FBSOA  
VDSS = 300V  
ID25 = 80A  
RDS(on) 38m  
IXTK80N30L2  
IXTX80N30L2  
D
O
RGi  
w
w
N-Channel Enhancement Mode  
Avalanche Rated  
G
O
TO-264 (IXTK)  
O
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
300  
300  
V
V
G
D
VDGR  
TJ = 25C to 150C, RGS = 1M  
Tab  
S
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
PLUS247 (IXTX)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
80  
200  
A
A
IA  
TC = 25C  
TC = 25C  
80  
3
A
J
G
D
EAS  
Tab  
S
PD  
TC = 25C  
960  
W
TJ  
-55 ... +150  
150  
C  
C  
C  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
Designed for Linear Operation  
International Standard Packages  
Avalanche Rated  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in  
N/lb  
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Guaranteed FBSOA at 75C  
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 3mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
300  
V
Solid State Circuit Breakers  
Soft Start Controls  
2.5  
4.5  
V
Linear Amplifiers  
200 nA  
Programmable Loads  
Current Regulators  
IDSS  
10 A  
TJ = 125C  
250 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
30  
38 m  
DS100883A(1/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTK80N30L2  
IXTX80N30L2  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
A
E
Q
S
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
24  
36  
48  
S
R
D
Q1  
Ciss  
Coss  
Crss  
19.1  
1760  
490  
nF  
pF  
pF  
R1  
1
2
3
L1  
L
RGi  
Integrated Gate Input Resistor  
0.88  
c
b
A1  
td(on)  
tr  
td(off)  
tf  
40  
ns  
ns  
b1  
b2  
Resistive Switching Times  
e
x2  
180  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
174  
67  
ns  
ns  
0P  
4
RG = 1(External)  
Terminals:  
1
= Gate  
2,4 Drain  
= Source  
=
3
Qg(on)  
Qgs  
660  
107  
364  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.13 °C/W  
°C/W  
0.15  
Safe Operating Area Specification  
Characteristic Values  
Symbol  
SOA  
Test Conditions  
Min.  
Typ.  
Max.  
VDS = 300V, ID = 1.9A, TC = 75°C, Tp = 5s  
570  
W
PLUS 247TM Outline  
A
E1  
E
Q
A2  
Source-Drain Diode  
D2  
R
D
D1  
Symbol  
Test Conditions  
Characteristic Values  
4
1
2
3
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
L1  
IS  
VGS = 0V  
80  
A
A
L
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
320  
1.4  
b
A1  
e
3 PLCS  
V
C
2 PLCS  
b2 2 PLCS  
b4  
Terminals: 1 - Gate  
trr  
QRM  
IRM  
485  
10  
42  
ns  
2,4 - Drain  
3 - Source  
IF = 40A, -di/dt = 100A/μs  
 C  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTK80N30L2  
IXTX80N30L2  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
250  
200  
150  
100  
50  
V
= 10V  
9V  
GS  
V
= 15V  
GS  
8V  
7V  
10V  
9V  
8V  
6V  
5V  
7V  
6V  
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
0
5
10  
15  
20  
25  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 40A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 10V  
9V  
GS  
V
= 10V  
GS  
8V  
7V  
I
= 80A  
D
I
= 40A  
D
6V  
5V  
4V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
1
2
3
4
5
6
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 40A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
BV  
DSS  
o
T
J
= 125 C  
V
GS(th)  
o
T
= 25 C  
J
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
40  
80  
120  
160  
200  
240  
280  
TJ - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTK80N30L2  
IXTX80N30L2  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
o
T
J
= 125 C  
o
25 C  
o
- 40 C  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 9. Transconductance  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
80  
70  
60  
50  
40  
30  
20  
10  
0
200  
180  
160  
140  
120  
100  
80  
o
o
T
J
= - 40 C, 25 C  
o
125 C  
o
T = 125 C  
J
60  
o
T = 25 C  
J
40  
20  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
VSD - Volts  
ID - Amperes  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
100,000  
10,000  
1,000  
100  
V
= 150V  
DS  
I
I
= 40A  
C
C
D
G
iss  
= 10mA  
oss  
C
rss  
= 1 MHz  
5
f
0
100  
200  
300  
400  
500  
600  
700  
0
10  
15  
20  
25  
30  
35  
40  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
VDS - Volts  
IXTK80N30L2  
IXTX80N30L2  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25oC  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 75oC  
1,000  
100  
10  
1,000  
100  
10  
R
Limit  
)
R
DS(  
on  
Limit  
)
DS(  
on  
25μs  
25μs  
100μs  
100μs  
1ms  
1ms  
10ms  
o
o
T = 150 C  
J
T = 150 C  
J
10ms  
100ms  
DC  
o
o
T
= 25 C  
C
T
C
= 75 C  
100ms  
DC  
Single Pulse  
Single Pulse  
1
1
1
10  
100  
1,000  
1
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaa  
0.3  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_80N30L2 (9R-W32) 1-02-18  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  

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