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IXTK8N150L [IXYS]

Power Field-Effect Transistor, 8A I(D), 1500V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN;
IXTK8N150L
型号： IXTK8N150L
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Power Field-Effect Transistor, 8A I(D), 1500V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN
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Preliminary Technical Information  
Linear Power MOSFET  
w/Extended FBSOA  
VDSS  
ID25  
= 1500V  
= 8A  
IXTK8N150L  
IXTX8N150L  
RDS(on) < 3.6Ω  
N-Channel Enhancement Mode  
Guaranteed FBSOA  
TO-264(IXTK)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
1500  
1500  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
G
S
(TAB)  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
8
A
A
PLUS247(IXTX)  
20  
PD  
TC = 25°C  
700  
W
TJ  
-55 to +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G
-55 to +150  
D
S
(TAB)  
Drain  
TL  
1.6mm (0.063 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
TSOLD  
G = Gate  
D
=
Md  
FC  
Mounting Torque (IXTK)  
Mounting Force (IXTX)  
1.13/10  
Nm/lb.in.  
N/lb.  
S = Source  
TAB = Drain  
20..120 / 4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Features  
z Designed for Linear Operations  
z International Standard Packages  
z Guaranteed FBSOA at 60°C  
z Molding Epoxies Meet UL94 V-0  
Flammability Classification  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
Applications  
(TJ = 25°C, Unless Otherwise Specified)  
z Programmable Loads  
z Current Regulators  
z DC-DC Convertors  
z Battery Chargers  
BVDSS  
VGS(th)  
VGS = 0V, ID = 1mA  
1500  
5.0  
V
VDS = VGS, ID = 250μA  
8.0  
V
IGSS  
IDSS  
VGS = ±30V, VDS = 0V  
±200 nA  
z DC Choppers  
VDS = VDSS  
VGS = 0V  
50 μA  
3 mA  
z Temperature and Lighting Controls  
TJ = 125°C  
RDS(on)  
VGS = 20V, ID = 0.5 • ID25 , Note 1  
3.6  
Ω
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
DS99616A(2/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTK8N150L  
IXTX8N150L  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 (IXTK) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 50V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
1.4  
2.3  
3.2  
S
Ciss  
Coss  
Crss  
8000  
405  
70  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
36  
18  
90  
95  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2Ω (External)  
Qg(on)  
Qgs  
250  
80  
nC  
nC  
nC  
VGS= 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
116  
RthJC  
RthCS  
0.18 °C/W  
°C/W  
0.15  
Safe Operating Area Specification  
Symbol  
SOA  
Test Conditions  
Characteristic Values  
Typ. Max.  
Min.  
VDS = 1000V, ID = 0.5A, TC = 60°C, TP = 3s 500  
W
PLUS 247TM (IXTX) Outline  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
8
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = 8A, VGS = 0V, Note 1  
IF = IS, -di/dt =100A/μs, VR = 100V  
32  
1.2  
V
1700  
ns  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Notes: 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
PRELIMINARY TECHNICAL INFORMATION  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTK8N150L  
IXTX8N150L  
Fig. 1. Extended Output Characteristics  
@ 25ºC  
Fig. 2. Output Characteristics  
@ 125ºC  
11  
10  
9
8
7
6
5
4
3
2
1
0
VGS = 20V  
VGS = 20V  
8
14V  
12V  
7
6
5
12V  
4
10V  
3
2
9V  
8V  
10V  
9V  
1
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
0
4
8
12  
16  
20  
24  
28  
32  
VDS - Volts  
VDS - Volts  
Fig. 3. RDS(on) Normalized to ID = 4A Value  
vs. Junction Temperature  
Fig. 4. RDS(on) Normalized to ID = 4A Value  
vs. Drain Current  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
I D = 8A  
I D = 4A  
VGS = 20V  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
8
9
10  
11  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 5. Maximum Drain Current vs.  
Case Temperature  
Fig. 6. Input Admittance  
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
TJ = 125ºC  
25ºC  
- 40ºC  
6
7
8
9
10  
11  
12  
13  
14  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
VGS - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTK8N150L  
IXTX8N150L  
Fig. 8. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 7. Transconductance  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
28  
24  
20  
16  
12  
8
T
J
= - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
TJ = 25ºC  
4
0
0
1
2
3
4
5
6
7
8
9
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
ID - Amperes  
VSD - Volts  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
20  
18  
16  
14  
12  
10  
8
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
VDS = 750V  
D = 4A  
I G = 10mA  
I
C
iss  
C
oss  
6
4
C
rss  
2
0
10  
0
40  
80  
120  
160  
200  
240  
280  
320  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
QG - NanoCoulombs  
Fig. 11. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_8N15L(8N)01-30-09  
IXTK8N150L  
IXTX8N150L  
Fig. 12. Forward-Bias Safe Operating Area @  
= 25ºC  
Fig. 13. Forward-Bias Safe Operating Area  
T
@ T = 60ºC  
C
C
100.0  
10.0  
1.0  
100.0  
10.0  
1.0  
RDS(on) Limit  
RDS(on) Limit  
25µs  
25µs  
100µs  
100µs  
1ms  
1ms  
10ms  
10ms  
100ms  
100ms  
DC  
DC  
T
T
= 150ºC  
= 25ºC  
T
T
= 150ºC  
= 60ºC  
J
J
C
C
Single Pulse  
Single Pulse  
0.1  
0.1  
10  
100  
1,000  
10,000  
10  
100  
1,000  
10,000  
VDS - Volts  
VDS - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_8N15L(8N)01-30-09  

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