IXTK8N150L [LITTELFUSE]
Power Field-Effect Transistor,;型号: | IXTK8N150L |
厂家: | LITTELFUSE |
描述: | Power Field-Effect Transistor, |
文件: | 总6页 (文件大小:149K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preliminary Technical Information
Linear Power MOSFET
w/Extended FBSOA
VDSS
ID25
= 1500V
= 8A
IXTK8N150L
IXTX8N150L
RDS(on) < 3.6Ω
N-Channel Enhancement Mode
Guaranteed FBSOA
TO-264(IXTK)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
1500
1500
V
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
G
S
(TAB)
VGSS
VGSM
Continuous
Transient
±30
±40
V
V
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
8
A
A
PLUS247(IXTX)
20
PD
TC = 25°C
700
W
TJ
-55 to +150
150
°C
°C
°C
TJM
Tstg
G
-55 to +150
D
S
(TAB)
Drain
TL
1.6mm (0.063 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
TSOLD
G = Gate
D
=
Md
FC
Mounting Torque (IXTK)
Mounting Force (IXTX)
1.13/10
Nm/lb.in.
N/lb.
S = Source
TAB = Drain
20..120 / 4.5..27
Weight
TO-264
PLUS247
10
6
g
g
Features
z Designed for Linear Operations
z International Standard Packages
z Guaranteed FBSOA at 60°C
z Molding Epoxies Meet UL94 V-0
Flammability Classification
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
Applications
(TJ = 25°C, Unless Otherwise Specified)
z Programmable Loads
z Current Regulators
z DC-DC Convertors
z Battery Chargers
BVDSS
VGS(th)
VGS = 0V, ID = 1mA
1500
5.0
V
VDS = VGS, ID = 250μA
8.0
V
IGSS
IDSS
VGS = ±30V, VDS = 0V
±200 nA
z DC Choppers
VDS = VDSS
VGS = 0V
50 μA
3 mA
z Temperature and Lighting Controls
TJ = 125°C
RDS(on)
VGS = 20V, ID = 0.5 • ID25 , Note 1
3.6
Ω
Advantages
z
Easy to Mount
Space Savings
High Power Density
z
z
DS99616A(2/09)
© 2009 IXYS CORPORATION, All Rights Reserved
IXTK8N150L
IXTX8N150L
Symbol
Test Conditions
Characteristic Values
TO-264 (IXTK) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 50V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
1.4
2.3
3.2
S
Ciss
Coss
Crss
8000
405
70
pF
pF
pF
td(on)
tr
td(off)
tf
36
18
90
95
ns
ns
ns
ns
Resistive Switching Times
V
GS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
Qg(on)
Qgs
250
80
nC
nC
nC
VGS= 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
116
RthJC
RthCS
0.18 °C/W
°C/W
0.15
Safe Operating Area Specification
Symbol
SOA
Test Conditions
Characteristic Values
Typ. Max.
Min.
VDS = 1000V, ID = 0.5A, TC = 60°C, TP = 3s 500
W
PLUS 247TM (IXTX) Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
8
A
A
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = 8A, VGS = 0V, Note 1
IF = IS, -di/dt =100A/μs, VR = 100V
32
1.2
V
1700
ns
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Notes: 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
PRELIMINARY TECHNICAL INFORMATION
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTK8N150L
IXTX8N150L
Fig. 1. Extended Output Characteristics
@ 25ºC
Fig. 2. Output Characteristics
@ 125ºC
11
10
9
8
7
6
5
4
3
2
1
0
VGS = 20V
VGS = 20V
8
14V
12V
7
6
5
12V
4
10V
3
2
9V
8V
10V
9V
1
0
0
5
10
15
20
25
30
35
40
45
50
0
4
8
12
16
20
24
28
32
VDS - Volts
VDS - Volts
Fig. 3. RDS(on) Normalized to ID = 4A Value
vs. Junction Temperature
Fig. 4. RDS(on) Normalized to ID = 4A Value
vs. Drain Current
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = 10V
TJ = 125ºC
I D = 8A
I D = 4A
VGS = 20V
TJ = 25ºC
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
10
11
TJ - Degrees Centigrade
ID - Amperes
Fig. 5. Maximum Drain Current vs.
Case Temperature
Fig. 6. Input Admittance
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
TJ = 125ºC
25ºC
- 40ºC
6
7
8
9
10
11
12
13
14
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
VGS - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXTK8N150L
IXTX8N150L
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
Fig. 7. Transconductance
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
28
24
20
16
12
8
T
J
= - 40ºC
25ºC
125ºC
TJ = 125ºC
TJ = 25ºC
4
0
0
1
2
3
4
5
6
7
8
9
0.4
0.5
0.6
0.7
0.8
0.9
1.0
ID - Amperes
VSD - Volts
Fig. 9. Gate Charge
Fig. 10. Capacitance
20
18
16
14
12
10
8
100,000
10,000
1,000
100
= 1 MHz
f
VDS = 750V
D = 4A
I G = 10mA
I
C
iss
C
oss
6
4
C
rss
2
0
10
0
40
80
120
160
200
240
280
320
0
5
10
15
20
25
30
35
40
VDS - Volts
QG - NanoCoulombs
Fig. 11. Maximum Transient Thermal Impedance
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_8N15L(8N)01-30-09
IXTK8N150L
IXTX8N150L
Fig. 12. Forward-Bias Safe Operating Area @
= 25ºC
Fig. 13. Forward-Bias Safe Operating Area
T
@ T = 60ºC
C
C
100.0
10.0
1.0
100.0
10.0
1.0
RDS(on) Limit
RDS(on) Limit
25µs
25µs
100µs
100µs
1ms
1ms
10ms
10ms
100ms
100ms
DC
DC
T
T
= 150ºC
= 25ºC
T
T
= 150ºC
= 60ºC
J
J
C
C
Single Pulse
Single Pulse
0.1
0.1
10
100
1,000
10,000
10
100
1,000
10,000
VDS - Volts
VDS - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_8N15L(8N)01-30-09
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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