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IXTK88N30P [IXYS]

PolarHTTM Power MOSFET; PolarHTTM功率MOSFET
IXTK88N30P
型号： IXTK88N30P
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

PolarHTTM Power MOSFET
PolarHTTM功率MOSFET
文件： 总5页 (文件大小：329K)
中文：  中文翻译
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PolarHTTM  
Power MOSFET  
IXTH 88N30P  
IXTK 88N30P  
IXTQ 88N30P  
IXTT 88N30P  
VDSS  
ID25  
RDS(on)  
= 300 V  
= 88 A  
≤ 40 mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247 (IXTH)  
Symbol  
Test Conditions  
Maximum Ratings  
D (TAB)  
G
D
VDSS  
VDGR  
TJ = 25° C to 150° C  
300  
300  
V
V
S
TJ = 25° C to 150° C; RGS = 1 MΩ  
VGS  
Continuous  
Transient  
20  
30  
V
V
TO-264 (IXTK)  
VGSM  
ID25  
TC =25° C  
88  
75  
A
A
A
ID(RMS)  
IDM  
External lead current limit  
TC = 25° C, pulse width limited by TJM  
220  
G
D
IAR  
TC =25° C  
60  
A
S
EAR  
EAS  
TC =25° C  
TC =25° C  
60  
mJ  
J
D (TAB)  
2.0  
TO-3P (IXTQ)  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 4 Ω  
10  
V/ns  
TC =25° C  
600  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G
D
(TAB)  
S
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
TO-268 (IXTT)  
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
Weight  
TO-247  
TO-264  
TO-3P & TO-268  
6.0  
10  
5.5  
g
g
g
G
S
D (TAB)  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
Features  
l
International standard package  
Unclamped Inductive Switching (UIS)  
rated  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 20 VDC, VDS = 0  
300  
V
V
l
2.5  
5.0  
l
Low package inductance  
- easy to drive and to protect  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
100  
1
µA  
mA  
Advantages  
TJ = 125° C  
l
Easy to mount  
Space savings  
l
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %  
40 mΩ  
l
High power density  
DS99129E(12/05)  
© 2006 IXYS All rights reserved  
IXTH 88N30P IXTK 88N30P  
IXTQ 88N30P IXTT 88N30P  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25° C unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
45  
60  
S
Ciss  
Coss  
Crss  
6300  
950  
pF  
pF  
pF  
190  
td(on)  
tr  
td(off)  
tf  
25  
24  
96  
25  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A  
RG = 3.3 Ω (External)  
Qg(on)  
Qgs  
180  
44  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
90  
RthJC  
0.21° C/W  
RthCS  
RthCS  
TO-247 and TO-3P  
TO-264  
0.21  
0.15  
° C/W  
° C/W  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
VGS = 0 V  
Repetitive  
88  
A
A
V
ISM  
220  
1.5  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤300 µs, duty cycle d≤ 2 %  
trr  
QRM  
IF = 25 A, -di/dt = 100 A/µs  
VR = 100 V, VGS = 0 V  
250  
3.3  
ns  
µC  
Characteristic Curves  
Fig. 2. Extended Output Characteristics  
Fig. 1. Output Characteristics  
@ 25ºC  
@ 25 C  
º
200  
180  
160  
140  
120  
100  
80  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
V
GS  
= 10V  
9V  
9V  
8V  
8V  
7V  
7V  
60  
6V  
5V  
40  
6V  
5V  
20  
0
0
2
4
6
8
10 12 14 16 18 20  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
VD S - Volts  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463 6771478 B2  
IXTH 88N30P IXTK 88N30P  
IXTQ 88N30P IXTT 88N30P  
Fig. 3. Output Characteristics  
Fig. 4. RDS(on Norm alized to 0.5 ID25  
)
@ 125ºC  
Value vs. Junction Tem perature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3
2.8  
2.6  
2.4  
2.2  
2
VGS = 10V  
VGS = 10V  
9V  
8V  
7V  
6V  
1.8  
1.6  
1.4  
1.2  
1
ID = 88A  
ID = 44A  
0.8  
0.6  
0.4  
5V  
6
0
1
2
3
4
5
7
8
9
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Norm alized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Tem perature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.4  
3.2  
3
External Lead Current Limit  
VGS = 10V  
2.8  
2.6  
2.4  
2.2  
2
TJ = 125ºC  
1.8  
1.6  
1.4  
1.2  
1
TJ = 25ºC  
0.8  
-50  
-25  
0
25  
50  
75  
100 125  
150  
0
20 40 60 80 100 120 140 160 180 200  
I D - Amperes  
TC - Degrees Centigrade  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
160  
140  
120  
100  
80  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = -40ºC  
25ºC  
125ºC  
60  
TJ = 125ºC  
25ºC  
40  
-40ºC  
20  
0
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
0
20  
40  
60  
80 100 120 140 160 180  
VG S - Volts  
I D - Amperes  
© 2006 IXYS All rights reserved  
IXTH 88N30P IXTK 88N30P  
IXTQ 88N30P IXTT 88N30P  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
280  
240  
200  
160  
120  
80  
VDS = 150V  
ID = 44A  
IG = 10mA  
TJ = 125ºC  
TJ = 25ºC  
40  
0
0
20  
40  
60  
80 100 120 140 160 180  
0.4  
0.6  
0.8 1  
VS D - Volts  
1.2  
1.4  
1.6  
Q G - nanoCoulombs  
Fig. 12. Forw ard-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
10000  
1000  
100  
1000  
100  
10  
TJ = 150ºC  
TC = 25ºC  
RDS(on) Limit  
C
iss  
25µs  
100µs  
C
C
1ms  
10ms  
oss  
rss  
DC  
f = 1MHz  
1
0
5
10  
15  
20  
VD S - Volts  
25  
30  
35  
40  
10  
100  
VD S - Volts  
1000  
Fig. 13. Maximum Transient Thermal Resistance  
1.00  
0.10  
0.01  
1
10  
100  
1000  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTH 88N30P IXTK 88N30P  
IXTQ 88N30P IXTT 88N30P  
TO-3P (IXTQ) Outline  
TO-268 (IXTT) Outline  
TO-247 (IXTH) Outline  
1
2
3
Terminals:  
1. Gate  
2,4. Drain  
Terminals:  
3. Source  
1. Gate  
2,4. Drain  
3. Source  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
TO-264 (IXTK) Outline  
© 2006 IXYS All rights reserved  

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