IXTK82N25P [IXYS]
PolarHT Power MOSFET; PolarHT功率MOSFET
| 型号： | IXTK82N25P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHT Power MOSFET |
| 文件： | 总5页 (文件大小：610K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHTTM
Power MOSFET
IXTQ 82N25P
IXTT 82N25P
IXTK 82N25P
VDSS = 250 V
ID25 = 82
RDS(on) = 35 mΩ
A
N-Channel Enhancement Mode
Preliminary Data Sheet
TO-264 (IXTK)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
T
= 25°C to 150°C
250
250
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ
VGSM
20
V
G
D
(TAB)
S
ID25
ID(RMS)
T
= 25°C
82
75
A
A
ECxternal lead current limit
TO-3P(IXTQ)
IDM
IAR
TC = 25°C, pulse width limited by TJM
250
60
A
A
TC = 25°C
EAR
EAS
TC = 25°C
TC = 25°C
40
mJ
J
1.0
G
D
S
(TAB)
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 4 Ω
,
10
V/ns
TO-268 (IXTT)
TC = 25°C
500
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G
S
D (TAB)
TL
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
°C
G = Gate
S = Source
D = Drain
TAB = Drain
Md
1.13/10 Nm/lb.in.
Weight
TO-3P
TO-264
TO-268
5.5
10
5.0
g
g
g
Features
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
z
z
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250µA
VGS = 20 VDC, VDS = 0
250
V
V
Advantages
2.5
5.0
z
Easy to mount
100
nA
z
Space savings
z
IDSS
VDS = VDSS
VGS = 0 V
25
250
µA
µA
High power density
TJ = 125°C
PolarHTTM DMOStransistors
utilize proprietary designs and
process. US patent is pending.
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
35 mΩ
DS99121B(04/04)
© 2004 IXYS All rights reserved
IXTK 82N25P IXTQ 82N25P
IXTT 82N25P
Symbol
gfs
TestConditions
Characteristic Values
TO-3P Outline
TO-268 Outline
6,404,065B1 6,162,665
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
30
52
S
Ciss
Coss
Crss
4800
900
pF
pF
pF
210
td(on)
tr
td(off)
tf
29
20
78
22
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
RG = 4 Ω (External)
Qg(on)
Qgs
142
32
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
74
RthJC
RthCH
0.25 K/W
TO-3P
TO-264
0.21
0.15
K/W
K/W
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
TestConditions
Min.
typ.
Max.
VGS = 0 V
82
A
A
V
ISM
Repetitive
250
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 25 A
-di/dt = 100 A/µs
VR = 100 V
200
2.0
ns
QRM
µC
TO-264 AA Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,534,343
6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
IXTK 82N25P IXTQ 82N25P
IXTT 82N25P
Fig. 2. Extended Output Characteristics
Fig. 1. Output Characteristics
@ 25
@ 25ºC
º
C
200
180
160
140
120
100
80
90
80
70
60
50
40
30
20
10
0
V
GS
= 10V
9V
VGS = 10V
9V
8V
8V
7V
7V
6V
60
40
6V
20
0
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
2
4
6
8
10 12 14 16 18 20
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics
@ 125
Fig. 4. RDS(on Normalized to ID25 Value
)
º
C
vs. Junction Temperature
90
80
70
60
50
40
30
20
10
0
2.6
2.4
2.2
2
VGS = 10V
VGS = 10V
9V
8V
1.8
1.6
1.4
1.2
1
ID = 82A
7V
ID = 41A
6V
5V
0.8
0.6
0.4
1
2
3
4
5
6
7
8
-50
-25
0
25
50
75
100 125 150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to
ID25 Value vs. ID
Fig. 6. Drain Current vs. Case
Temperature
3.7
3.4
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1
90
80
70
60
50
40
30
20
10
0
VGS = 10V
TJ = 125ºC
TJ = 25ºC
0.7
20 40 60 80 100 120 140 160 180 200
-50
-25
0
25
50
75
100 125 150
ID - Amperes
TC - Degrees Centigrade
© 2004 IXYS All rights reserved
IXTK 82N25P IXTQ 82N25P
IXTT 82N25P
Fig. 8. Transconductance
Fig. 7. Input Admittance
100
90
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
TJ = -40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
-40ºC
4
0.3
0
4.5
5
5.5
6
6.5
7
7.5
8
0
20
40
60
80 100 120 140 160 180
ID - Amperes
VGS - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
240
200
160
120
80
10
9
8
7
6
5
4
3
2
1
0
VDS = 125V
ID = 41A
G = 10mA
I
TJ = 125ºC
TJ = 25ºC
40
0
0.5
0.7
0.9
1.1
1.3
1.5
0
15 30 45 60 75 90 105 120 135 150
VSD - Volts
QG - nanoCoulombs
Fig. 12. Forward-Bias
Safe Operating Area
Fig. 11. Capacitance
1000
100
10
10000
1000
100
f = 1MHz
TJ = 150ºC
TC = 25ºC
RDS(on) Limit
C
iss
25µs
100µs
1ms
10ms
C
oss
DC
C
rss
1
5
10
15
20
25
30
35
40
10
100
1000
VDS - Volts
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1 6,162,665
6,534,343
6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
IXTK 82N25P IXTQ 82N25P
IXTT 82N25P
Fig. 13. M axim um Trans ie nt The rm al Re s is tance
1.00
0.10
0.01
1
10
100
1000
Pulse Width - milliseconds
© 2004 IXYS All rights reserved
相关型号：
IXTK8N150L
Power Field-Effect Transistor, 8A I(D), 1500V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN
IXYS
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