IXTK80N25 [IXYS]
High Current MegaMOSTM FET; 大电流场效应管MegaMOSTM
| 型号： | IXTK80N25 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Current MegaMOSTM FET |
| 文件： | 总5页 (文件大小：568K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXTK 80N25 VDSS = 250 V
High Current
MegaMOSTMFET
ID25
= 80 A
RDS(on) = 33 mΩ
N-Channel Enhancement Mode
PreliminaryDataSheet
Symbol
Testconditions
Maximum ratings
TO-264AA(IXTK)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1.0 MΩ
250
250
V
V
VGS
Continuous
Transient
±20
±30
V
V
VGSM
D (TAB)
G
ID25
ID(RMS)
IDM
T
= 25°C MOSFET chip capability
80
75
A
ECxternal lead current limit
A
A
A
D
S
T
= 25°C, pulse width limited by TJM
320
80
IAR
TCC = 25°C
G = Gate
S = Source
D
= Drain
Tab = Drain
EAR
EAS
T
= 25°C
60
2.5
mJ
J
TCC = 25°C
Features
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• International standard package
• Fast switching times
PD
TJ
TC = 25°C
540
W
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
Applications
TL
1.6 mm (0.063 in.) from case for 10 s
Mountingtorque
300
0.7/6
10
°C
Nm/lb.in.
g
• Motor controls
Md
• DC choppers
Weight
TO-264
• Switched-mode power supplies
Advantages
• Easy to mount with one screw
(isolated mounting screw hole)
• Space savings
Symbol Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
• High power density
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 1 mA
250
V
V
VDS = VGS, ID = 250 µA
VGS = ±20 V DC, VDS = 0
2.0
4.0
±100 nA
IDSS
VDS = V
T = 25°C
50 µA
VGS = 0 DVSS
TJJ = 125°C
2
mA
RDS(on)
VGS = 10 V, I = 0.5 I
33 mΩ
Pulse test, t ≤D300 msD,2d5 uty cycle d ≤ 2%
© 2003 IXYS All rights reserved
DS98953A(11/03)
IXTK 80N25
Symbol
Test Conditions
Characteristic values
Min. Typ. Max.
TO-264 AA Outline
(TJ = 25°C unless otherwise specified)
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
40
56
S
Ciss
Coss
Crss
6000
1125
420
pF
pF
pF
td(on)
tr
td(off)
tf
28
25
88
24
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 1.0 Ω (External)
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
.190
.202
.114
.083
.056
.106
.122
.033
1.030
.786
Qg(on)
Qgs
240
40
110
nC
nC
nC
A1
.100
A2
.079
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
b
.044
.094
.114
.021
1.020
.780
.215BSC
.000
.000
b1
Qgd
b2
c
D
E
e
J
K
RthJC
RthCK
0.23 K/W
K/W
5.46BSC
0.00
0.00
0.15
0.25
0.25
.010
.010
L
L1
20.32
2.29
20.83
2.59
.800
.090
.820
.102
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
Source-Drain Diode
Ratings and Characteristics
(TJ = 25°C unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0V
80
A
A
V
ISM
Repetitive; pulse width limited by TJM
320
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 25A, -di/dt = 100 A/µs, VR = 100V
300
3.0
ns
Qrr
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
IXTK 80N25
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
200
180
160
140
120
100
80
80
70
60
50
40
30
20
10
0
VGS = 10V
VGS = 10V
9V
8V
9V
8V
7V
6V
7V
6V
5V
60
40
5V
20
0
0
0
0
0.5
1
1.5
2
2.5
0
1
2
3
4
5
6
7
8
9
10
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. RDS(on) Normalized to ID25 Value vs.
Junction Temperature
80
70
60
50
40
30
20
10
0
2.6
2.4
2.2
2
VGS = 10V
VGS = 10V
9V
8V
7V
6V
1.8
1.6
1.4
1.2
1
ID = 80A
ID = 40A
5V
0.8
0.6
0.4
1
2
3
4
5
-50
-25
0
25
50
75
100 125 150
VD S - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID25
Value vs. ID
Fig. 6. Drain Current vs. Case
Temperature
3
2.8
2.6
2.4
2.2
2
90
80
70
60
50
40
30
20
10
0
VGS = 10V
TJ = 125ºC
1.8
1.6
1.4
1.2
1
TJ = 25ºC
0.8
20 40 60 80 100 120 140 160 180 200
-50
-25
0
25
50
75
100 125 150
I D - Amperes
TC - Degrees Centigrade
© 2003 IXYS All rights reserved
IXTK 80N25
Fig. 8. Transconductance
Fig. 7. Input Admittance
90
80
70
60
50
40
30
20
10
0
140
120
100
80
TJ = -40ºC
25ºC
125ºC
60
40
TJ = 125ºC
25ºC
-40ºC
20
0
4
0.4
0
4.5
5
5.5
6
6.5
7
7.5
0
20
40
60
80
100 120 140 160
VG S - Volts
I D - Amperes
Fig. 9. Source Current vs. Source-To-
Drain Voltage
Fig. 10. Gate Charge
10
200
180
160
140
120
100
80
VDS = 125V
ID = 40A
IG = 10mA
9
8
7
6
5
4
3
2
1
0
60
TJ = 125ºC
40
TJ = 25ºC
20
0
0.6
0.8
1
1.2
1.4
0
50
100
150
200
250
Q G - nanoCoulombs
VS D - Volts
Fig. 12. Forw ard Bias Safe
Operating Area
Fig. 11. Capacitance
10000
1000
100
1000
f = 1MHz
TC = 25ºC
25µs
C
C
iss
RDS(on) Limit
100
10
1
1ms
DC
oss
C
rss
1
10
100
1000
5
10
15
20
25
30
35
40
VD S - Volts
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTK 80N25
Fig. 13. Forw ard Bias e d Safe Ope rating Are a (FBSOA)
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
1
10
100
1000
Pulse Width - milliseconds
© 2003 IXYS All rights reserved
相关型号：
IXTK8N150L
Power Field-Effect Transistor, 8A I(D), 1500V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN
IXYS
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