IXTK62N25 [IXYS]
High Current MegaMOSFET; 高电流MegaMOSFET
| 型号： | IXTK62N25 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Current MegaMOSFET |
| 文件： | 总2页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
IXTK 62N25
VDSS = 250 V
ID25 = 62 A
RDS(on) = 35 mΩ
High Current
MegaMOSTMFET
N-Channel Enhancement Mode
Symbol
Testconditions
Maximum ratings
TO-264AA(IXTK)
VDSS
VDGR
TJ = 25°C to 150°C
250
250
V
V
TJ = 25°C to 150°C; RGS = 1.0 MΩ
VGS
Continuous
Transient
20
30
V
V
VGSM
D (TAB)
G
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
62
248
62
A
A
A
D
S
G = Gate
S = Source
D
= Drain
Tab = Drain
EAR
EAS
TC = 25°C
TC = 25°C
45
1.
mJ
5
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TJ
TC = 25°C
390
W
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
Features
TL
1.6 mm (0.063 in.) from case for 10 s
Mountingtorque
300
0.7/6
10
°C
Nm/lb.in.
g
Md
• Low RDS (on) HDMOSTM process
• Ruggedpolysilicongatecellstructure
• Internationalstandardpackage
• Fastswitchingtimes
Weight
TO-264
Applications
Symbol Test Conditions
Characteristic Values
• Motorcontrols
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
• DC choppers
• Switched-mode power supplies
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 1 mA
250
2.
V
Advantages
VDS = VGS, ID = 250 µA
VGS = 20 V DC, VDS = 0
0
4.
0
V
100 nA
• Easy to mount with one screw
(isolatedmountingscrewhole)
• Space savings
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
50 µA
2
mA
• High power density
RDS(on)
VGS = 10 V, I = 0.5 ID25
35 mΩ
Pulse test, t ≤D300 ms, duty cycle d ≤ 2%
© 2002 IXYS All rights reserved
98877A (02/02)
IXTK 62N25
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic values
Min. Typ. Max.
TO-264 AA Outline
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
35
50
S
Ciss
Coss
Crss
6600
1125
270
pF
pF
pF
td(on)
tr
td(off)
tf
30
25
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 1.5 Ω (External)
115
15
Dim.
Millimeter
Inches
Max.
Min.
Max.
Min.
.190
A
4.82
2.54
2.00
5.13
2.89
2.10
.202
.114
.083
Qg(on)
Qgs
240
55
nC
nC
nC
A1
A2
.100
.079
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
b
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
b1
b2
Qgd
85
c
0.53
25.91
19.81
0.83
26.16
19.96
.021
1.020
.780
.033
1.030
.786
D
RthJC
RthCK
0.30 K/W
K/W
E
e
5.46BSC
.215BSC
0.15
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
K
L
L1
20.32
2.29
20.83
2.59
.800
.090
.820
.102
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
Source-Drain Diode
Ratings and Characteristics
(TJ = 25°C unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0V
62
A
A
V
ISM
Repetitive; pulse width limited by TJM
248
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 30A, -di/dt = 100 A/µs, VR = 100V
360
6
ns
Qrr
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
相关型号：
IXTK75N30
Power Field-Effect Transistor, 75A I(D), 300V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN
IXYS
IXTK75N30
Power Field-Effect Transistor, 75A I(D), 300V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN
LITTELFUSE
IXTK8N150L
Power Field-Effect Transistor, 8A I(D), 1500V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN
IXYS
©2020 ICPDF网 联系我们和版权申明