IXTK75N30 [LITTELFUSE]
Power Field-Effect Transistor, 75A I(D), 300V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN;![IXTK75N30](http://pdffile.icpdf.com/pdf2/p00309/img/icpdf/IXTK75N30_1860285_icpdf.jpg)
型号: | IXTK75N30 |
厂家: | ![]() |
描述: | Power Field-Effect Transistor, 75A I(D), 300V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN 局域网 开关 脉冲 晶体管 |
文件: | 总4页 (文件大小:120K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
Advance Technical Information
IXTK 75N30
VDSS = 300 V
High Current
MegaMOSTMFET
ID25
= 75 A
RDS(on) = 42 mΩ
N-Channel Enhancement Mode
Symbol
Testconditions
Maximum ratings
TO-264AA(IXTK)
VDSS
VDGR
TJ = 25°C to 150°C
300
300
V
V
TJ = 25°C to 150°C; RGS = 1.0 MΩ
VGS
Continuous
Transient
±20
±30
V
V
VGSM
D (TAB)
G
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
75
300
75
A
A
A
D
S
G = Gate
S = Source
D
= Drain
EAR
EAS
TC = 25°C
TC = 25°C
60
2.5
mJ
J
Tab = Drain
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TJ
TC = 25°C
540
W
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
Features
TL
1.6 mm (0.063 in.) from case for 10 s
Mountingtorque
300
0.7/6
10
°C
Nm/lb.in.
g
Md
•Low RDS (on) HDMOSTM process
•Ruggedpolysilicongatecellstructure
•Internationalstandardpackage
•Fastswitchingtimes
Weight
TO-264
Applications
Symbol Test Conditions
Characteristic Values
•Motorcontrols
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
•DC choppers
•Switched-mode power supplies
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 1 mA
300
V
V
Advantages
VDS = VGS, ID = 250 µA
VGS = ±20 V DC, VDS = 0
2.0
4.0
±100 nA
•Easy to mount with one screw
(isolatedmountingscrewhole)
•Space savings
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
50 µA
2
mA
•High power density
RDS(on)
VGS = 10 V, ID = 0.5 ID25
42 mΩ
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
© 2003 IXYS All rights reserved
DS99012(03/03)
IXTK 75N30
Symbol
Test Conditions
Characteristic values
Min. Typ. Max.
TO-264 AA Outline
(TJ = 25°C unless otherwise specified)
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
45
60
S
Ciss
Coss
Crss
6000
1010
400
pF
pF
pF
td(on)
tr
td(off)
tf
24
25
88
20
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 1.5 Ω (External)
Dim.
Millimeter
Inches
Max.
Min.
Max.
Min.
.190
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.202
.114
.083
QG(on)
QGS
240
42
nC
nC
nC
.100
.079
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
QGD
110
c
D
0.53
25.91
19.81
0.83
26.16
19.96
.021
1.020
.780
.033
1.030
.786
RthJC
RthCK
0.23 K/W
K/W
E
e
5.46BSC
.215BSC
0.15
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
L
L1
20.32
2.29
20.83
2.59
.800
.090
.820
.102
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
Source-Drain Diode
Ratings and Characteristics
(TJ = 25°C unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0V
75
A
A
V
ISM
Repetitive; pulse width limited by TJM
300
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 25A, -di/dt = 100 A/µs, VR = 100V
360
4
ns
Qrr
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTK 75N30
Fig. 2. Extended Output Characteristics
@ 25 deg. C
Fig. 1. Output Characteristics
@ 25 Deg. C
80
70
60
50
40
30
20
10
18 0
15 0
12 0
90
60
30
0
VGS = 10V
VGS = 10V
9V
8V
7V
9V
8V
7V
6V
6V
5V
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
0
2
4
6
8
10
12
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID25 Value vs.
Junction Temperature
3
Fig. 3. Output Characteristics
@ 125 Deg. C
60
50
40
30
20
10
VGS = 10V
9V
8V
7V
6V
VGS = 10V
2.5
2
5V
ID= 75A
1. 5
ID= 37.5A
1
0
0.5
0
1
2
3
4
5
6
-50 -25
0
25 50 75 100 125 150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID25
Value vs. ID
Fig. 6. Drain Current vs. Case
Temperature
80
70
60
50
40
30
20
10
3
VGS = 10V
2.6
TJ = 125ºC
2.2
1.8
1.4
1
TJ = 25ºC
0
0.6
-50 -25
0
25 50 75 100 125 150
0
30
60
90
120
150
180
ID - Amperes
TC - Degrees Centigrade
© 2003 IXYS All rights reserved
IXTK 75N30
Fig. 7. Input Admittance
Fig. 8. Transconductance
14 0
12 0
10 0
80
60
40
20
0
12 0
10 0
80
60
40
20
0
TJ = -40ºC
25ºC
125ºC
TJ= -40ºC
25ºC
125ºC
0
30
60
90
120
150
180
3.5
4
4.5
5
5.5
6
6.5
7
VGS - Volts
ID - Amperes
Fig. 9. Source Current vs. Source-To-Drain
Voltage
Fig. 10. Gate Charge
200
17 5
15 0
12 5
10 0
75
10
8
6
4
2
0
VDS = 150V
ID =37.5A
IG = 10mA
TJ = 125ºC
TJ = 25ºC
50
25
0
0.4
0.6
0.8
1
1.2
1.4
0
40
80
120
160
200
240
VSD - Volts
QG - nanoCoulombs
Fig. 12. Maximum Transient Thermal
Resistance
Fig. 11. Capacitance
10000
10 0 0
10 0
1
C
iss
f = 1MHz
0.1
C
C
oss
rss
0.01
0
5
10
15
20 25
30 35 40
1
10
100
1000
VDS - Volts
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00266/img/page/IXTK8N150L_1601465_files/IXTK8N150L_1601465_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00266/img/page/IXTK8N150L_1601465_files/IXTK8N150L_1601465_2.jpg)
IXTK8N150L
Power Field-Effect Transistor, 8A I(D), 1500V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN
IXYS
©2020 ICPDF网 联系我们和版权申明