IXTK74N20 [IXYS]
High Current MegaMOSFET; 高电流MegaMOSFET
| 型号： | IXTK74N20 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Current MegaMOSFET |
| 文件： | 总2页 (文件大小：319K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDSS
ID25
RDS(on)
High Current
MegaMOSTMFET
IXTK 74 N20
IXTH 68 N20
200V 74 A 35 mW
200V 68 A 35 mW
N-Channel Enhancement Mode
Preliminary data
Symbol Test conditions
Maximum ratings
TO-247AD (IXTH)
VDSS
VDGR
TJ = 25°C to 150°C
200
200
V
V
TJ = 25°C to 150°C; RGS = 1.0 MΩ
D (TAB)
VGS
Continuous
Transient
±20
±30
V
V
VGSM
ID25
IDM
TC = 25°C
74N20
68N20
74
68
A
A
TO-264 AA (IXTK)
TC = 25°C, pulse width limited by TJM
74N20
68N20
296
272
A
A
PD
TC = 25°C
74N20
68N20
416
300
W
W
D (TAB)
G
TJ
-55 ... +150
150
°C
°C
°C
D
S
TJM
Tstg
G = Gate
S = Source
D
= Drain
-55 ... +150
Tab = Drain
Md
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-264
TO-247
10
6
g
g
Features
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
International standard package
Fast switching times
Max lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Symbol Test Conditions
Characteristic Values
Applications
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
Motor controls
DC choppers
Uninterruptable Power Supplies (UPS)
Switch-mode and resonant-mode
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 5 mA
VDS = VGS, ID = 4 mA
VGS = ±20 V DC, VDS = 0
200
V
V
2.0
4.0
±100
nA
Advantages
IDSS
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
500
3
µA
mA
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
35 mΩ
High power density
95512C(12/97)
IXYS reserves the right to change limits, test conditions and dimensions.
© 1998 IXYS All rights reserved
C2 - 14
IXTH 68N20
IXTK 74N20
Symbol
Test Conditions
Characteristic values
Min. Typ. Max.
TO-247 AD (IXTH) Outline
(TJ = 25°C unless otherwise specified)
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
35
42
S
Ciss
Coss
Crss
5450
1275
630
pF
pF
pF
1
2
3
td(on)
tr
td(off)
tf
30
230
180
50
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 1 Ω (External)
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
C2
Qg(on)
Qgs
300
75
nC
nC
nC
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
100
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
RthCK
TO-264 AA
TO-247 AD
0.30 K/W
K/W
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
0.15
0.15
20.80 21.46
15.75 16.26
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
RthJC
RthCK
0.35 K/W
K/W
.780 .800
.177
P
3.55
5.89
3.65
.140 .144
Q
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Source-Drain Diode
Ratings and Characteristics
(TJ = 25°C unless otherwise specified)
TO-264 AA Outline
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0
74N20
68N20
74
68
A
A
ISM
VSD
trr
Repetitive; pulse width limited by TJM
74N20
68N20
296
272
A
A
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
IF = IS, -di/dt = 100 A/µs, VR = 100V
600
ns
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
c
D
E
e
0.53
25.91 26.16
19.81 19.96
5.46 BSC
0.83
.021
1.020
.780
.033
1.030
.786
.215 BSC
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117 5,486,715
5,237,481 5,381,025
C2 - 15
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