IXTK60N50L2 [IXYS]
LinearL2 Power MOSFET w/Extended FBSOA; LinearL2功率MOSFET W /扩展FBSOA![IXTK60N50L2](http://pdffile.icpdf.com/pdf2/p00203/img/icpdf/IXTK60_1145025_icpdf.jpg)
型号: | IXTK60N50L2 |
厂家: | ![]() |
描述: | LinearL2 Power MOSFET w/Extended FBSOA |
文件: | 总5页 (文件大小:164K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Preliminary Technical Information
LinearL2TM Power
MOSFET w/Extended
FBSOA
VDSS
ID25
= 500V
= 60A
IXTK60N50L2
IXTX60N50L2
RDS(on) < 100mΩ
N-Channel Enhancement Mode
Avalanche Rated
TO-264
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
500
500
V
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
G
(TAB)
S
VGSS
VGSM
Continuous
Transient
±30
±40
V
V
ID25
IDM
TC = 25°C
60
A
A
PLUS247
TC = 25°C, pulse width limited by TJM
150
IA
EAS
TC = 25°C
TC = 25°C
60
3
A
J
PD
TC = 25°C
960
W
G
TJ
-55...+150
150
°C
°C
°C
(TAB)
D
S
TJM
Tstg
-55...+150
G = Gate
D
= Drain
S = Source
TAB = Drain
TL
1.6mm (0.063 in.) from case for 10s
Plastic body for 10s
300
260
°C
°C
TSOLD
Md
FC
Mounting torque (IXTK)
Mounting Force (IXTX)
1.13/10
Nm/lb.in.
N/lb.
20..120 / 4.5..27
Features
Weight
TO-264
PLUS247
10
6
g
g
z Designed for linear operation
z International standard packages
z Avalanche rated
z Guaranteed FBSOA at 75°C
Advantages
• Easy to mount
• Space savings
• High power density
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
(TJ = 25°C, unless otherwise specified)
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 250μA
VGS = ±30V, VDS = 0V
500
2.5
V
z Solid state circuit breakers
z Soft start controls
z Linear amplifiers
z Programmable loads
z Current regulators
4.5
V
±200 nA
50 μA
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
5
mA
RDS(on)
VGS = 10V, ID = 0.5 • ID25 , Note 1
100 mΩ
DS100087(12/08)
© 2008 IXYS CORPORATION, All rights reserved
IXTK60N50L2
IXTX60N50L2
Symbol
Test Conditions
Characteristic Values
TO-264 (IXTK) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
18
25
32
S
Ciss
Coss
Crss
24
1325
172
nF
pF
pF
td(on)
tr
td(off)
tf
40
40
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
165
38
RG = 0.5Ω (External)
Qg(on)
Qgs
610
130
365
nC
nC
nC
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
0.13 °C/W
°C/W
0.15
Safe Operating Area Specification
Symbol
SOA
Test Conditions
Characteristic Values
Min.
Typ.
Max.
VDS = 400V, ID = 1.1A, TC = 75°C, tp = 3s
440
W
PLUS 247TM (IXTX) Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
IS
VGS = 0V
60
A
A
V
ISM
VSD
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
240
1.5
trr
IRM
QRM
980
73
35.8
ns
A
μC
IF = 60A, -di/dt = 100A/μs,
VR = 100V, VGS = 0V
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots;
but also may yet contain some information supplied during a pre-production design evaluation.
IXYS reserves the right to change limits, test conditions, and dimensions without notice.
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTK60N50L2
IXTX60N50L2
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
60
55
50
45
40
35
30
25
20
15
10
5
160
140
120
100
80
VGS = 20V
14V
12V
VGS = 20V
14V
12V
10V
9V
8V
10V
9V
60
7V
8V
40
7V
6V
6V
5V
20
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 30A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
60
55
50
45
40
35
30
25
20
15
10
5
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 20V
12V
10V
VGS = 10V
9V
8V
I D = 60A
I D = 30A
7V
6V
5V
0
0
1
2
3
4
5
6
7
8
9
10
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 30A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
65
60
55
50
45
40
35
30
25
20
15
10
5
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = 10V
20V
- - - -
TJ = 125ºC
TJ = 25ºC
0
0
20
40
60
80
100
120
140
160
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TC - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_60N50L2(9R)12-08-08-B
IXTK60N50L2
IXTX60N50L2
Fig. 7. Input Admittance
Fig. 8. Transconductance
55
50
45
40
35
30
25
20
15
10
5
100
90
80
70
60
50
40
30
20
10
0
TJ = - 40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
- 40ºC
0
0
10
20
30
40
50
60
70
80
90 100 110
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
16
14
12
10
8
200
180
160
140
120
100
80
VDS = 250V
I
I
D = 30A
G = 10mA
6
TJ = 125ºC
60
4
TJ = 25ºC
40
2
20
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
100
200
300
400
500
600
700
800
900
VSD - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
10,000
1,000
100
1.000
0.100
0.010
0.001
= 1 MHz
f
C
iss
C
oss
C
rss
0
5
10
15
20
25
30
35
40
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTK60N50L2
IXTX60N50L2
Fig. 13. Forward-Bias Safe Operating Area
Fig. 14. Forward-Bias Safe Operating Area
@ T = 25ºC
@ T = 75ºC
C
C
1,000.0
100.0
10.0
1.0
1,000.0
100.0
10.0
1.0
R
Limit
R
Limit
DS(on)
DS(on)
25µs
25µs
100µs
100µs
1ms
1ms
10ms
10ms
100ms
100ms
DC
DC
T
T
= 150ºC
= 25ºC
T
= 150ºC
= 75ºC
J
J
T
C
C
Single Pulse
Single Pulse
0.1
0.1
10
100
1000
10
100
1000
VDS - Volts
VDS - Volts
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_60N50L2(9R)12-08-08-B
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