首页 |元器件品牌

IXTK600N04T2 [IXYS]

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode; N沟道增强模式额定雪崩快速内在二极管
IXTK600N04T2
型号： IXTK600N04T2
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
N沟道增强模式额定雪崩快速内在二极管

晶体 二极管 晶体管 功率场效应晶体管 开关 脉冲 局域网
文件： 总6页 (文件大小：216K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
Advance Technical Information  
TrenchT2TM GigaMOSTM  
Power MOSFET  
VDSS = 40V  
ID25 = 600A  
RDS(on) ≤ 1.5mΩ  
IXTK600N04T2  
IXTX600N04T2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXTK)  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
40  
40  
V
V
Tab  
D
S
VGSM  
Transient  
± 20  
V
PLUS247 (IXTX)  
ID25  
IL(RMS)  
IDM  
TC = 25°C (Chip Capability)  
External Lead Current Limit  
TC = 25°C, Pulse Width Limited by TJM  
600  
160  
1600  
A
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
200  
3
A
J
G
Tab  
D
PD  
TC = 25°C  
1250  
W
S
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
z International Standard Packages  
z High Current Handling Capability  
z Fast Intrinsic Diode  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
z Avalanche Rated  
z
Low RDS(on)  
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250µA  
VDS = VGS, ID = 250µA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
40  
V
V
z DC-DC Converters and Off-Line UPS  
z Primary-Side Switch  
z High Speed Power Switching  
Applications  
1.5  
3.5  
± 200 nA  
10 µA  
IDSS  
TJ = 150°C  
1
mA  
RDS(on)  
VGS = 10V, ID = 100A, Notes 1 & 2  
1.5 mΩ  
© 2009 IXYS CORPORATION, All Rights Reserved  
DS100209(11/09)  
IXTK600N04T2  
IXTX600N04T2  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 (IXTK) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
90  
150  
S
Ciss  
Coss  
Crss  
40  
6400  
1470  
nF  
pF  
pF  
RGI  
td(on)  
tr  
Gate Input Resistance  
1.32  
40  
Ω
ns  
ns  
ns  
ns  
Resistive Switching Times  
20  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 200A  
td(off)  
tf  
90  
Millimeter  
Inches  
RG = 1Ω (External)  
Dim.  
Min.  
Max.  
Min.  
Max.  
250  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
Qg(on)  
Qgs  
590  
127  
163  
nC  
nC  
nC  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS  
Qgd  
c
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
D
E
e
25.91 26.16  
19.81 19.96  
5.46 BSC  
RthJC  
RthCS  
0.12 °C/W  
°C/W  
.215 BSC  
0.15  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
Source-Drain Diode  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
Symbol  
Test Conditions  
Characteristic Values  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
PLUS 247TM (IXTX) Outline  
IS  
VGS = 0V  
600  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
1800  
1.2  
trr  
IRM  
100  
3.3  
ns  
A
IF = 150A, VGS = 0V  
-di/dt = 100A/µs  
VR = 20V  
QRM  
165  
nC  
Notes 1. Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%.  
2. Includes lead resistance.  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTK600N04T2  
IXTX600N04T2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
350  
300  
250  
200  
150  
100  
50  
400  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 15V  
10V  
7V  
10V  
7V  
6V  
6V  
5V  
5V  
4.5V  
4V  
4.5V  
4V  
0
0
0.0  
-50  
-50  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0.0  
0.0  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.7  
350  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics @ TJ = 150ºC  
Fig. 4. Normalized RDS(on) vs. Junction Temperature  
350  
300  
250  
200  
150  
100  
50  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 15V  
10V  
VGS = 10V  
I
< 600A  
7V  
D
6V  
5V  
4V  
3V  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 6. Drain Current vs. Case Temperature  
Fig. 5. Normalized RDS(on) vs. Drain Current  
180  
160  
140  
120  
100  
80  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
15V  
External Lead Current Limit  
TJ = 175ºC  
60  
TJ = 25ºC  
40  
20  
0
50  
100  
150  
200  
250  
300  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTK600N04T2  
IXTX600N04T2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
240  
200  
160  
120  
80  
TJ = - 40ºC  
25ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
150ºC  
60  
40  
40  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
2.0  
0.2  
0
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
1.1  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
VDS = 20V  
I
I
D = 300A  
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0
100  
200  
300  
400  
500  
600  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
10,000  
1,000  
100  
10  
100.0  
10.0  
1.0  
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
C
External Lead Limit  
oss  
1ms  
10ms  
C
rss  
100ms  
T
T
= 175ºC  
= 25ºC  
DC  
J
C
= 1 MHz  
5
f
Single Pulse  
1
0.1  
0
1
10  
100  
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTK600N04T2  
IXTX600N04T2  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time  
vs. Drain Current  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
RG = 1Ω , VGS = 10V  
DS = 20V  
RG = 1ꢀ , VGS = 10V  
DS = 20V  
V
V
TJ = 125ºC  
I D = 200A  
I D = 100A  
TJ = 25ºC  
40  
60  
80  
100  
120  
140  
160  
180  
200  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
600  
500  
400  
300  
200  
100  
0
140  
400  
350  
300  
250  
200  
150  
100  
50  
160  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 20V  
tf  
t
d(off) - - - -  
RG = 1Ω, VGS = 10V  
DS = 20V  
150  
140  
130  
120  
110  
100  
90  
120  
100  
80  
V
V
I D = 200A  
I D = 200A  
I D = 100A  
I D = 100A  
60  
40  
0
80  
20  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
1
2
3
4
5
6
7
8
9
10  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times  
vs. Drain Current  
400  
350  
300  
250  
200  
150  
100  
50  
200  
180  
160  
140  
120  
100  
80  
800  
700  
600  
500  
400  
300  
200  
100  
0
800  
700  
600  
500  
400  
300  
200  
100  
0
t f  
t
d(off) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 20V  
t f  
t
d(off) - - - -  
RG = 1ꢀ, VGS = 10V  
DS = 20V  
I D = 200A, 100A  
V
V
TJ = 125ºC, 25ºC  
60  
0
40  
1
2
3
4
5
6
7
8
9
10  
40  
60  
80  
100  
120  
140  
160  
180  
200  
ID - Amperes  
RG - Ohms  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTK600N04T2  
IXTX600N04T2  
Fig. 19. Maximum Transient Thermal Impedance  
.sadgsfgsf  
0.300  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF:T_600N04T2(V9)11-05-09  

相关型号：

IXTK60N50L2

 LinearL2 Power MOSFET w/Extended FBSOA
IXYS

IXTK62N25

 High Current MegaMOSFET
IXYS

IXTK74N20

 High Current MegaMOSFET
IXYS

IXTK75N30

 Power Field-Effect Transistor, 75A I(D), 300V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN
IXYS

IXTK75N30

 Power Field-Effect Transistor, 75A I(D), 300V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN
LITTELFUSE

IXTK80N25

 High Current MegaMOSTM FET
IXYS

IXTK80N30L2

 Power Field-Effect Transistor,
LITTELFUSE

IXTK82N25P

 PolarHT Power MOSFET
IXYS

IXTK88N30P

 PolarHTTM Power MOSFET
IXYS

IXTK8N150L

 Power Field-Effect Transistor, 8A I(D), 1500V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN
IXYS

IXTK8N150L

 Power Field-Effect Transistor,
LITTELFUSE

IXTK90N15

 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 90A I(D) | TO-264AA
ETC
©2020 ICPDF网 联系我们和版权申明