MRF166C [TE]
MOSFET BROADBAND RF POWER FETs; MOSFET宽带射频功率FET
| 型号： | MRF166C |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | MOSFET BROADBAND RF POWER FETs |
| 文件： | 总9页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
by MRF166C/D
The RF MOSFET Line
N–Channel Enhancement Mode MOSFETs
Designed primarily for wideband large–signal output and driver from 30–500
MHz.
•
MRF166C — Guaranteed Performance at 500 MHz, 28 Vdc
Output Power = 20 W
20 W, 500 MHz
MOSFET
Gain = 13.5 dB
Efficiency = 50%
BROADBAND
RF POWER FETs
•
Replacement for Industry Standards such as MRF136, DV2820, BLF244,
SD1902, and ST1001
•
•
•
•
•
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Facilitates Manual Gain Control, ALC and Modulation Techniques
Excellent Thermal Stability, Ideally Suited for Class A Operation
Low C
rss
— 4.0 pF @ V
= 28 V
DS
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
D
CASE 319–07, STYLE 3
G
S
MAXIMUM RATINGS
Rating
Symbol
Value
65
Unit
Vdc
Vdc
Drain–Gate Voltage
Drain–Gate Voltage
V
DSS
V
DGR
65
(R
= 1.0 MΩ)
GS
Gate–Source Voltage
V
±20
Adc
Adc
GS
Drain Current — Continuous
I
4.0
D
Total Device Dissipation @ T = 25°C
Derate Above 25°C
P
D
70
0.4
Watts
W/°C
C
Storage Temperature Range
Operating Junction Temperature
T
–65 to 150
200
°C
°C
stg
T
J
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
2.5
°C/W
θJC
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 10
1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V = 0 V, I = 5.0 mA)
V
65
—
—
—
—
—
—
V
(BR)DSS
GS
Zero Gate Voltage Drain Current
(V = 28 V, V = 0 V)
D
I
0.5
1.0
mA
µA
DSS
DS
Gate–Source Leakage Current
(V = 20 V, V = 0 V)
GS
I
GSS
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage
V
1.5
0.8
3.0
1.1
4.5
—
V
GS(th)
(V
DS
= 10 V, I = 25 mA)
D
Forward Transconductance
(V = 10 V, I = 1.5 A)
g
fs
mhos
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
—
—
—
28
30
—
—
—
pF
pF
pF
iss
(V
= 28 V, V
= 0 V, f = 1.0 MHz)
= 0 V, f = 1.0 MHz)
GS
DS
GS
Output Capacitance
(V = 28 V, V
C
oss
DS
Reverse Transfer Capacitance
(V = 28 V, V = 0 V, f = 1.0 MHz)
C
4.0
rss
DS
GS
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
G
13.5
50
16
55
—
—
dB
%
ps
(V
= 28 V, P
= 20 W, f = 500 MHz, I
= 25 mA)
= 25 mA)
= 25 mA,
DD
out
out
DQ
DQ
DQ
Drain Efficiency
(V = 28 V, P
η
= 20 W, f = 500 MHz, I
DD
Electrical Ruggedness
(V = 28 V, P = 20 W, f = 500 MHz, I
ψ
No Degradation in Output Power
DD
out
Load VSWR 30:1 at All Phase Angles)
REV 10
2
RFC1
C9
C10
V
DD
= 28 V
+
R3
BIAS
+
–
Vdc
C8
C11
–
R2
C4
RFC2
R1
RF
OUTPUT
Z1
Z2
Z4
RF
INPUT
C7
Z3
C2
C5
C6
C1
DUT
C3
C1, C7
C2, C6
C3
C4, C8
C5
C9, C10
C11
200 pF, Chip Capacitor
Z1
0.120″ x 3.3″, Microstrip Line
350 mils
2–10 pF, Trimmer Capacitor, Johansen
27 pF, ATC 100 mil Chip Capacitor
0.1 µF, Chip Capacitor
15 pF, ATC 100 mil Chip Capacitor
680 pF, Feedthru Capacitor
50 µF, 50 V, Electrolytic Capacitor
120 Ω, 1/2 W Resistor
C2
600 mils
C3
R1
R2
10 kΩ, 1/2 W Resistor
R3
RFC1
RFC2
1 kΩ, 1/2 W Resistor
Ferroxcube VK200 19/4B
10 Turns AWG #18, 0.125″ I.D., Enameled
0.062″ Teflon Fiberglass
Z2
0.120″ x 2.1″, Microstrip Line
C5
C6
Board Material
1 oz. Copper Clad Both Sides
825 mils
ε = 2.56
r
1650 mils
Z3, Z4
0.120″ x 0.25″, Microstrip Line
Figure 1. MRF166C 500 MHz Test Circuit
TYPICAL CHARACTERISTICS
100
50
10
C
oss
T = 25°C
C
C
iss
20
10
1
C
rss
5
V
= 0 V
GS
2
1
f = 1 MHz
0.1
0
5
10
15
20
25
0
10
V , DRAIN–SOURCE VOLTAGE (VOLTS)
DS
100
V
, DRAIN–SOURCE VOLTAGE (VOLTS)
DS
Figure 2. Capacitance versus Drain–Source Voltage
Figure 3. DC Safe Operating Area
REV 10
3
TYPICAL CHARACTERISTICS
32
28
12
10
400 MHz
275 MHz
24
20
16
12
8
400 MHz
8
f = 500 MHz
f = 500 MHz
6
4
2
0
V
I
DQ
= 28 V
= 25 mA
V
I
DQ
= 13.5 V
= 25 mA
DD
DD
4
0
0.5
0
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6
0
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45
P , INPUT POWER (WATTS)
in
P , INPUT POWER (WATTS)
in
Figure 4. Output Power versus Input Power
Figure 5. Output Power versus Input Power
40
35
35
30
f = 500 MHz
= 25 mA
f = 400 MHz
P
in
= 0.5 W
0.3 W
I
I
= 25 mA
DQ
DQ
P
in
= 1 W
0.5 W
30
25
20
15
10
5
25
20
15
10
5
0.15 W
0.18 W
0
0
12
14
16
18
20
22
24
26
28
12
14
16
18
20
22
24
26
28
P , INPUT POWER (WATTS)
in
P , INPUT POWER (WATTS)
in
Figure 6. Output Power versus Supply Voltage
Figure 7. Output Power versus Supply Voltage
REV 10
4
V
DD
= 28 V, I = 25 mA, P = 20 Watts
DQ out
f
Z
Z
*
in
OL
MHz
Ohms
Ohms
Z = 10 Ω
o
500
400
290
2.09 – j2.77
0.93 – j3.80
2.63 – j7.58
4.87 – j2.63
3.09 – j5.24
7.35 – j8.67
500 MHz
500 MHz
Z
*
OL
f = 290 MHz
Z
OL
* =Conjugate of the optimum load impedance into
which the device output operates at a given output
power, voltage and frequency.
400 MHz
400 MHz
f = 290 MHz
Z
in
Figure 8. Series Equivalent Input and Output Impedance
Figure 9. MRF166C Test Fixture
REV 10
5
Table 1. Common Source S–Parameters (V
DS
= 12.5 V, I = 1.25 A)
D
S
11
S
21
S
12
S
22
f
MHz
|S
|
φ
|S
|
φ
105
100
97
94
91
90
89
87
85
83
83
82
80
79
79
78
76
75
75
74
72
71
70
70
69
68
66
66
66
65
63
62
62
61
60
59
59
58
57
56
56
56
|S
|
φ
|S
|
φ
11
21
12
22
30
0.840
0.836
0.832
0.829
0.826
0.822
0.818
0.819
0.821
0.821
0.820
0.818
0.820
0.821
0.820
0.820
0.820
0.821
0.822
0.823
0.825
0.827
0.827
0.827
0.829
0.831
0.832
0.832
0.831
0.833
0.836
0.837
0.838
0.839
0.840
0.843
0.845
0.846
0.846
0.847
0.848
0.850
–142
–151
–156
–159
–162
–164
–165
–167
–168
–169
–169
–170
–170
–171
–171
–171
–172
–172
–173
–173
–173
–173
–174
–174
–174
–174
–174
–174
–174
–175
–175
–175
–175
–175
–176
–176
–176
–176
–176
–176
–176
–176
22.59
17.4
14.1
12.0
10.4
9.09
8.07
7.28
6.61
6.00
5.56
5.22
4.86
4.52
4.23
4.03
3.86
3.62
3.39
3.25
3.12
2.96
2.83
2.71
2.62
2.52
2.42
2.32
2.25
2.18
2.10
2.00
1.95
1.90
1.84
1.77
1.71
1.66
1.64
1.59
1.52
1.48
0.025
0.025
0.026
0.026
0.026
0.026
0.027
0.027
0.027
0.026
0.027
0.027
0.027
0.027
0.027
0.027
0.027
0.027
0.027
0.027
0.028
0.026
0.027
0.026
0.027
0.027
0.027
0.027
0.027
0.027
0.028
0.027
0.028
0.028
0.028
0.028
0.028
0.029
0.030
0.030
0.030
0.030
20
0.727
0.743
0.751
0.764
0.763
0.763
0.765
0.774
0.773
0.771
0.778
0.785
0.786
0.781
0.774
0.799
0.799
0.784
0.780
0.795
0.823
0.791
0.789
0.791
0.801
0.807
0.788
0.792
0.797
0.810
0.812
0.789
0.806
0.817
0.817
0.811
0.805
0.801
0.845
0.836
0.823
0.816
–155
–161
–164
–166
–168
–169
–170
–171
–172
–172
–172
–172
–173
–173
–172
–173
–174
–175
–174
–173
–175
–175
–174
–174
–174
–175
–175
–175
–174
–174
–175
–176
–173
–174
–175
–175
–175
–172
–174
–176
–176
–174
40
17
15
14
14
14
14
14
14
15
16
17
17
17
20
20
20
20
22
24
23
24
26
27
28
29
30
32
33
34
35
35
39
39
40
41
42
46
46
46
47
49
50
60
70
80
90
100
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250
260
270
280
290
300
310
320
330
340
350
360
370
380
390
400
410
420
430
440
REV 10
6
Table 1. Common Source S–Parameters (V
DS
= 12.5 V, I = 1.25 A) (continued)
D
S
11
S
21
S
12
S
22
f
MHz
|S
|
φ
–176
–177
–177
–177
–177
–177
178
|S
|
φ
|S
|
φ
|S
|
φ
–174
–178
–176
–176
–175
–175
180
11
21
12
22
450
460
470
480
490
500
600
700
800
900
1000
0.851
0.853
0.853
0.856
0.857
0.859
0.857
0.884
0.881
0.890
0.897
1.47
1.42
54
0.032
0.032
0.031
0.032
0.033
0.034
0.032
0.047
0.031
0.069
0.090
51
0.851
0.849
0.830
0.834
0.841
0.847
0.877
0.881
0.890
0.885
0.931
53
53
53
52
51
41
34
30
26
24
48
51
53
54
54
73
65
83
71
60
1.37
1.34
1.32
1.28
0.988
0.789
0.684
0.580
0.503
176
179
173
174
172
176
170
173
Table 2. Common Source S–Parameters (V
= 28 V, I = 1.25 A)
D
DS
S
11
S
21
S
12
S
22
f
MHz
|S
|
φ
|S
|
φ
113
106
101
98
95
92
90
88
86
84
83
82
80
79
78
77
75
73
73
72
70
69
68
67
66
65
63
62
|S
|
φ
|S
|
φ
11
21
12
22
30
0.842
0.831
0.822
0.816
0.812
0.806
0.801
0.802
0.805
0.805
0.803
0.801
0.803
0.804
0.803
0.804
0.806
0.806
0.807
0.809
0.812
0.814
0.815
0.816
0.818
0.821
0.822
0.823
–125
–136
–143
–148
–152
–155
–157
–159
–161
–162
–163
–164
–165
–165
–166
–166
–166
–167
–168
–168
–168
–169
–169
–169
–169
–169
–170
–170
29.6
23.2
19.0
16.2
14.1
12.4
11.1
9.97
9.04
8.22
7.59
7.09
6.61
6.16
5.77
5.49
5.25
4.92
4.60
4.40
4.21
3.99
3.83
3.66
3.52
3.39
3.25
3.11
0.024
0.025
0.026
0.026
0.027
0.026
0.027
0.027
0.027
0.026
0.026
0.026
0.026
0.026
0.026
0.026
0.026
0.025
0.025
0.025
0.025
0.024
0.024
0.024
0.024
0.025
0.024
0.023
28
0.586
0.607
0.613
0.626
0.635
0.643
0.650
0.656
0.654
0.654
0.663
0.673
0.675
0.674
0.672
0.697
0.700
0.688
0.680
0.689
0.713
0.701
0.707
0.711
0.715
0.718
0.708
0.715
–136
–145
–151
–155
–157
–159
–160
–161
–163
–163
–163
–164
–164
–164
–164
–164
–165
–166
–165
–165
–167
–167
–166
–166
–166
–167
–168
–167
40
22
19
17
16
15
14
13
13
13
14
14
14
14
16
17
16
16
17
19
19
20
21
22
23
24
26
28
50
60
70
80
90
100
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250
260
270
280
290
300
REV 10
7
Table 2. Common Source S–Parameters (V
= 28 V, I = 1.25 A) (continued)
D
DS
S
11
S
21
S
12
S
22
f
MHz
|S
11
|
φ
|S
21
|
φ
|S
12
|
φ
|S
22
|
φ
310
320
330
340
350
360
370
380
390
400
410
420
430
440
450
460
470
480
490
500
600
700
800
900
1000
0.822
0.825
0.828
0.830
0.832
0.834
0.836
0.839
0.840
0.841
0.842
0.844
0.845
0.846
0.849
0.853
0.855
0.857
0.857
0.859
0.862
0.893
0.890
0.895
0.905
–170
–170
–171
–171
–171
–171
–171
–172
–172
–172
–172
–172
–173
–173
–173
–173
–173
–174
–174
–174
–179
178
2.99
2.89
2.78
2.66
2.59
2.52
2.44
2.34
2.26
2.19
2.14
2.09
1.99
1.93
1.91
1.84
1.77
1.72
1.68
1.64
1.18
0.921
0.771
0.635
0.544
62
0.023
0.024
0.024
0.024
0.024
0.024
0.023
0.023
0.024
0.024
0.025
0.026
0.027
0.026
0.027
0.027
0.027
0.027
0.027
0.029
0.036
0.043
0.043
0.065
0.086
29
0.725
0.734
0.736
0.724
0.739
0.757
0.755
0.745
0.738
0.735
0.787
0.790
0.777
0.770
0.794
0.803
0.787
0.789
0.796
0.802
0.851
0.856
0.880
0.882
0.931
–166
–166
–167
–168
–166
–166
–167
–167
–168
–166
–167
–168
–168
–167
–167
–171
–170
–169
–168
–169
–173
–175
–178
–178
178
61
60
59
58
57
56
55
54
54
53
51
51
51
49
48
47
47
47
46
33
26
22
17
14
31
33
33
37
39
39
38
40
46
46
46
49
52
53
51
54
57
56
57
77
75
78
74
69
175
173
171
REV 10
8
PACKAGE DIMENSIONS
Q 2 PL
-A-
L
M
M
M
0.15 (0.006)
T A
N
IDENTIFICATION
NOTCH
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
6
1
5
4
3
-N-
INCHES
DIM MIN MAX
0.965 0.985 24.52 25.01
MILLIMETER
MIN MAX
A
B
C
D
E
F
H
J
K
L
N
Q
2
K
0.355 0.375
0.230 0.260
0.115 0.125
0.102 0.114
0.075 0.085
0.160 0.170
0.004 0.006
0.090 0.110
0.725 BSC
9.02
5.85
2.93
2.59
1.91
4.07
0.11
2.29
9.52
6.60
3.17
2.90
2.15
4.31
0.15
2.79
F
D 2 PL
M
M
M
0.38 (0.015)
T
A
N
18.42 BSC
5.72
3.18
M
M
M
B
0.38 (0.015)
T
A
N
0.225 0.241
0.125 0.135
6.12
3.42
J
STYLE 3:
PIN 1. SOURCE (COMMON)
2. GATE (INPUT)
3. SOURCE (COMMON)
4. SOURCE (COMMON)
5. DRAIN (OUTPUT)
C
H
E
SEATING
PLANE
-T-
6. SOURCE (COMMON)
CASE 319–07
ISSUE M
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 10
9
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