MRF175GU [MOTOROLA]
N-CHANNEL MOS BROADBAND RF POWER FETs; N沟道MOS宽带射频功率FET
| 型号： | MRF175GU |
| 厂家： | 
MOTOROLA |
| 描述： | N-CHANNEL MOS BROADBAND RF POWER FETs |
| 文件： | 总8页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MRF175GU/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode
Designed for broadband commercial and military applications using push pull
circuits at frequencies to 500 MHz. The high power, high gain and broadband
performance of these devices makes possible solid state transmitters for FM
broadcast or TV channel frequency bands.
200/150 WATTS, 28 V, 500 MHz
N–CHANNEL MOS
BROADBAND
•
Guaranteed Performance
RF POWER FETs
MRF175GV @ 28 V, 225 MHz (“V” Suffix)
Output Power — 200 Watts
Power Gain — 14 dB Typ
Efficiency — 65% Typ
MRF175GU @ 28 V, 400 MHz (“U” Suffix)
Output Power — 150 Watts
Power Gain — 12 dB Typ
Efficiency — 55% Typ
D
•
•
•
100% Ruggedness Tested At Rated Output Power
Low Thermal Resistance
G
G
Low C
— 20 pF Typ @ V
= 28 V
DS
S
rss
(FLANGE)
CASE 375–04, STYLE 2
D
MAXIMUM RATINGS
Rating
Symbol
Value
65
Unit
Vdc
Vdc
Drain–Source Voltage
Drain–Gate Voltage
V
DSS
V
DGR
65
(R
= 1.0 MΩ)
GS
Gate–Source Voltage
V
±40
Vdc
Adc
GS
Drain Current — Continuous
I
26
D
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
400
2.27
Watts
W/°C
C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
T
–65 to +150
200
°C
°C
stg
T
J
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
0.44
°C/W
θJC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(V = 0, I = 50 mA)
V
65
—
—
—
—
—
—
Vdc
mAdc
(BR)DSS
GS
Zero Gate Voltage Drain Current
(V = 28 V, V = 0)
D
I
2.5
1.0
DSS
GSS
DS GS
Gate–Source Leakage Current
(V = 20 V, V = 0)
I
µAdc
GS DS
(continued)
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 7
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (1)
Gate Threshold Voltage (V
DS
= 10 V, I = 100 mA)
V
1.0
0.1
2.0
3.0
0.9
3.0
6.0
1.5
—
Vdc
Vdc
D
GS(th)
Drain–Source On–Voltage (V
GS
= 10 V, I = 5.0 A)
V
D
DS(on)
Forward Transconductance (V
DS
= 10 V, I = 2.5 A)
g
fs
mhos
D
DYNAMIC CHARACTERISTICS (1)
Input Capacitance (V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
C
—
—
—
180
200
20
—
—
—
pF
pF
pF
iss
Output Capacitance (V
DS
= 28 V, V
GS
C
oss
Reverse Transfer Capacitance (V
DS
= 28 V, V
GS
C
rss
FUNCTIONAL CHARACTERISTICS — MRF175GV (2) (Figure 1)
Common Source Power Gain
G
12
55
14
65
—
—
dB
%
ps
(V
DD
= 28 Vdc, P
= 200 W, f = 225 MHz, I
= 200 W, f = 225 MHz, I
= 200 W, f = 225 MHz, I
= 2.0 x 100 mA)
= 2.0 x 100 mA)
= 2.0 x 100 mA,
out
DQ
DQ
DQ
Drain Efficiency
(V = 28 Vdc, P
η
DD
out
Electrical Ruggedness
(V = 28 Vdc, P
ψ
No Degradation in Output Power
DD out
VSWR 10:1 at all Phase Angles)
NOTES:
1. Each side of device measured separately.
2. Measured in push–pull configuration.
L2
R1
+
C10
28 V
–
BIAS 0–6 V
C8
C9
C3
C4
R2
L1
D.U.T.
T2
T1
C6
C5
C1
C2
C7
C1 — Arco 404, 8.0–60 pF
C2, C3, C7, C8 — 1000 pF Chip
C4, C9 — 0.1 µF Chip
C5 — 180 pF Chip
C6 — 100 pF and 130 pF Chips in Parallel
R1 — 100 Ohms, 1/2 W
R2 — 1.0 k Ohm, 1/2 W
T1 — 4:1 Impedance Ratio RF Transformer.
T1 — Can Be Made of 25 Ohm Semirigid Coax,
T1 — 47–52 Mils O.D.
C10 — 0.47 µF Chip, Kemet 1215 or Equivalent
L1 — 10 Turns AWG #16 Enamel Wire, Close
L1 — Wound, 1/4″ I.D.
T2 — 1:9 Impedance Ratio RF Transformer.
T2 — Can Be Made of 15–18 Ohms Semirigid
T2 — Coax, 62–90 Mils O.D.
L2 — Ferrite Beads of Suitable Material for
L2 — 1.5–2.0 µH Total Inductance
NOTE: For stability, the input transformer T1 should be loaded
NOTE: with ferrite toroids or beads to increase the common
NOTE: mode inductance. For operation below 100 MHz. The
NOTE: same is required for the output transformer.
Board material — .062″ fiberglass (G10),
Two sided, 1 oz. copper, ε
5
r
Unless otherwise noted, all chip capacitors
are ATC Type 100 or Equivalent.
Figure 1. 225 MHz Test Circuit
MRF175GU MRF175GV
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL CHARACTERISTICS — MRF175GU (1) (Figure 2)
Common Source Power Gain
G
10
50
12
55
—
—
dB
%
ps
(V
DD
= 28 Vdc, P
= 150 W, f = 400 MHz, I
= 150 W, f = 400 MHz, I
= 150 W, f = 400 MHz, I
= 2.0 x 100 mA)
= 2.0 x 100 mA)
= 2.0 x 100 mA,
out
DQ
DQ
DQ
Drain Efficiency
(V = 28 Vdc, P
η
DD
out
Electrical Ruggedness
(V = 28 Vdc, P
ψ
No Degradation in Output Power
DD out
VSWR 10:1 at all Phase Angles)
NOTE:
1. Measured in push–pull configuration.
B
A
L5
L6
C14
C15
BIAS
28 V
C18
R1
C10
C11
C1
C12
R2
C13
L3
D.U.T.
C8
L1
Z1
Z3
Z4
Z5
B1
C3
C4
C6
L4
C5
C7
B2
Z2
Z6
L2
C2
C9
R3
A
B
0.180
″
C16
C17
0.200
″
B1 — Balun 50 Ω Semi Rigid Coax 0.086″ O.D. 2″ Long
B2 — Balun 50 Ω Semi Rigid Coax 0.141″ O.D. 2″ Long
C1, C2, C8, C9 — 270 pF ATC Chip Cap
C3, C5, C7 — 1.0–20 pF Trimmer Cap
C4 — 15 pF ATC Chip Cap
L1, L2 — Hairpin Inductor #18 Wire
L3, L4 — 12 Turns #18 Enameled Wire 0.340″ I.D.
L5 — Ferroxcube VK200 20/4B
L6 — 3 Turns #16 Enameled Wire 0.340″ I.D.
R1 — 1.0 kΩ 1/4 W Resistor
C6 — 33 pF ATC Chip Cap
R2, R3 — 10 kΩ 1/4 W Resistor
C10, C12, C13, C16, C17 — 0.01 µF Ceramic Cap
C11 — 1.0 µF 50 V Tantalum
C14, C15 — 680 pF Feedthru Cap
Z1, Z2 — Microstrip Line 0.400″ x 0.250″
Z3, Z4 — Microstrip Line 0.870″ x 0.250″
Z5, Z6 — Microstrip Line 0.500″ x 0.250″
C18 — 20 µF 50 V Tantalum
Board material — 0.060″ Teflon–fiberglass,
ε = 2.55, copper clad both sides, 2 oz. copper.
r
Figure 2. 400 MHz Test Circuit
MOTOROLA RF DEVICE DATA
MRF175GU MRF175GV
3
TYPICAL CHARACTERISTICS
4000
3000
2000
1000
0
100
V
V
= 20 V
= 10 V
DS
10
DS
T
= 25°C
C
1
0
2
4
6
8
10
12
14
16
18
20
1
10
, DRAIN–SOURCE VOLTAGE (VOLTS)
100
I
, DRAIN CURRENT (AMPS)
V
DS
D
Figure 3. Common Source Unity Current Gain
Frequency versus Drain Current
Figure 4. DC Safe Operating Area
5
4
3
2
1
1.2
V
= 28 V
DD
1.1
1
V
= 10 V
DS
I
= 4 A
D
3 A
2 A
TYPICAL DEVICE SHOWN, V
GS(th)
= 3 V
0.9
0.8
100 mA
1
2
3
4
5
6
–25
0
25
50
75
100
125
150
175
V
, GATE–SOURCE VOLTAGE (VOLTS)
T
, CASE TEMPERATURE (°C)
GS
C
Figure 5. Drain Current versus Gate Voltage
(Transfer Characteristics)
Figure 6. Gate–Source Voltage versus
Case Temperature
1000
500
V
= 0 V
GS
f = 1 MHz
C
oss
200
100
50
C
iss
C
rss
20
10
0
5
10
15
20
25
V
, DRAIN–SOURCE VOLTAGE (VOLTS)
DS
Figure 7. Capacitance versus Drain–Source Voltage*
* Data shown applies to each half of MRF175GU/GV.
MRF175GU MRF175GV
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
MRF175GV
300
200
100
0
320
280
I
= 2 x 100 mA
DQ
f = 225 MHz
240
200
P
= 12 W
in
8 W
4 W
160
120
80
40
0
V
I
= 28 V
= 2 x 100 mA
DD
DQ
f = 225 MHz
0
12
24
12
14
16
18
20
22
24
26
28
P
, POWER INPUT (WATTS)
V , SUPPLY VOLTAGE (VOLTS)
DD
in
Figure 8. Power Input versus Power Output
Figure 9. Output Power versus Supply Voltage
MRF175GU
200
180
160
140
120
100
200
180
160
140
120
100
P
= 14 W
in
f = 400 MHz
500 MHz
10 W
6 W
80
60
40
20
0
80
60
40
20
V
I
= 28 V
= 2 x 100 mA
DS
DQ
f = 400 MHz
24 26
0
12
14
16
18
20
22
28
0
5
10
15
20
25
V
, SUPPLY VOLTAGE (VOLTS)
P
, INPUT POWER (WATTS)
DD
in
Figure 10. Output Power versus Supply Voltage
Figure 11. Output Power versus Input Power
MRF175GV
30
25
P
= 200 W
out
20
15
V
I
= 28 V
= 2 x 100 mA
DS
DQ
150 W
10
5
5
10
20
50
100
200
500
f, FREQUENCY (MHz)
Figure 12. Power Gain versus Frequency
MOTOROLA RF DEVICE DATA
MRF175GU MRF175GV
5
INPUT AND OUTPUT IMPEDANCE
V
= 28 V, I = 2 x 100 mA
DQ
DD
Z
in
f
Z
Z
*
OL
in
OHMS
300
MHz
OHMS
400
225
(P
= 150 W)
out
225
400
Z
225
300
400
500
1.95 – j2.30
1.75 – j0.20
1.60 + j2.20
1.35 + j4.00
3.10 – j0.25
2.60 + j0.20
2.00 + j1.20
1.70 + j2.70
f = 500 MHz
f = 500 MHz
300
*
Z
*
225
OL
OL
150
100
150
100
50
30
(P
out
= 200 W)
Z
*=Conjugateoftheoptimumload
OL
impedance into which the device
operates at a given output power,
voltage and frequency.
30
50
100
150
225
6.50 – j5.10
5.00 – j4.80
3.60 – j4.20
2.80 – j3.60
1.95 – j2.30
6.30 – j2.50
5.75 – j2.75
4.60 – j2.65
2.60 – j2.20
2.60 – j0.60
50
30
Z
= 10 Ω
o
NOTE: Input and output impedance values given are measured from gate to gate and drain to drain respectively.
Figure 13. Series Equivalent Input/Output Impedance
RF POWER MOSFET CONSIDERATIONS
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between the terminals. The metal oxide gate structure deter-
provided for general information about the device. They are
not RF design parameters and no attempt should be made to
use them as such.
mines the capacitors from gate–to–drain (C ), and gate–to–
gd
source (C ). The PN junction formed during the fabrication
LINEARITY AND GAIN CHARACTERISTICS
gs
In addition to the typical IMD and power gain, data pres-
ented in Figure 3 may give the designer additional informa-
tion on the capabilities of this device. The graph represents
the small signal unity current gain frequency at a given drain
of the MOSFET results in a junction capacitance from drain–
to–source (C ).
ds
These capacitances are characterized as input (C ), out-
iss
put (C
) and reverse transfer (C ) capacitances on data
sheets. The relationships between the inter–terminal capaci-
tances and those given on data sheets are shown below. The
oss
rss
current level. This is equivalent to f for bipolar transistors.
T
Since this test is performed at a fast sweep speed, heating of
the device does not occur. Thus, in normal use, the higher
temperatures may degrade these characteristics to some ex-
tent.
C
can be specified in two ways:
iss
1. Drain shorted to source and positive voltage at the gate.
2. Positivevoltageofthedraininrespecttosourceandzero
volts at the gate. In the latter case the numbers are lower.
However, neither method represents the actual operat-
ing conditions in RF applications.
DRAIN CHARACTERISTICS
One figure of merit for a FET is its static resistance in the
full–on condition. This on–resistance, V
, occurs in the
DS(on)
linear region of the output characteristic and is specified un-
der specific test conditions for gate–source voltage and drain
DRAIN
C
gd
current. For MOSFETs, V
has a positive temperature
DS(on)
coefficient and constitutes an important design consideration
at high temperatures, because it contributes to the power
dissipation within the device.
GATE
C
C
C
= C + C
gd gs
iss
C
= C + C
ds
oss
rss
gd
ds
= C
gd
C
gs
SOURCE
GATE CHARACTERISTICS
The gate of the MOSFET is a polysilicon material, and is
electrically isolated from the source by a layer of oxide. The
input resistance is very high — on the order of 10 ohms —
The C
iss
given in the electrical characteristics table was
measured using method 2 above. It should be noted that
, C , C are measured at zero drain current and are
9
C
resulting in a leakage current of a few nanoamperes.
iss oss rss
MRF175GU MRF175GV
6
MOTOROLA RF DEVICE DATA
Gate control is achieved by applying a positive voltage
slightly in excess of the gate–to–source threshold voltage,
DESIGN CONSIDERATIONS
The MRF175G is a RF power N–channel enhancement
mode field–effect transistor (FETs) designed for HF, VHF and
UHF power amplifier applications. Motorola RF MOSFETs
feature a vertical structure with a planar design.
Motorola Application Note AN211A, FETs in Theory and
Practice, is suggested reading for those not familiar with the
construction and characteristics of FETs.
The major advantages of RF power FETs include high
gain, low noise, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mis-
matched loads without suffering damage. Power output can
be varied over a wide range with a low power dc control sig-
nal.
V
.
GS(th)
Gate Voltage Rating — Never exceed the gate voltage
rating (or any of the maximum ratings on the front page). Ex-
ceeding the rated V can result in permanent damage to
GS
the oxide layer in the gate region.
Gate Termination — The gates of this device are essen-
tially capacitors. Circuits that leave the gate open–circuited
or floating should be avoided. These conditions can result in
turn–on of the devices due to voltage build–up on the input
capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protec-
tion is required, an external zener diode is recommended.
Using a resistor to keep the gate–to–source impedance
low also helps damp transients and serves another important
function. Voltage transients on the drain can be coupled to
the gate through the parasitic gate–drain capacitance. If the
gate–to–source impedance and the rate of voltage change
on the drain are both high, then the signal coupled to the gate
may be large enough to exceed the gate–threshold voltage
and turn the device on.
DC BIAS
The MRF175G is an enhancement mode FET and, there-
fore, does not conduct when drain voltage is applied. Drain
current flows when a positive voltage is applied to the gate.
RF power FETs require forward bias for optimum perfor-
mance. The value of quiescent drain current (I
) is not criti-
DQ
cal for many applications. The MRF175G was characterized
at I = 100 mA, each side, which is the suggested minimum
DQ
value of I
cation, I
DQ
parameters.
. For special applications such as linear amplifi-
DQ
may have to be selected to optimize the critical
HANDLING CONSIDERATIONS
When shipping, the devices should be transported only in
antistatic bags or conductive foam. Upon removal from the
packaging, careful handling procedures should be adhered
to. Those handling the devices should wear grounding straps
and devices not in the antistatic packaging should be kept in
metal tote bins. MOSFETs should be handled by the case
and not by the leads, and when testing the device, all leads
should make good electrical contact before voltage is ap-
plied. As a final note, when placing the FET into the system it
is designed for, soldering should be done with grounded
equipment.
The gate is a dc open circuit and draws no current. There-
fore, the gate bias circuit may be just a simple resistive divid-
er network. Some applications may require a more elaborate
bias sytem.
GAIN CONTROL
Power output of the MRF176 may be controlled from its
rated value down to zero (negative gain) by varying the dc
gate voltage. This feature facilitates the design of manual
gain control, AGC/ALC and modulation systems.
MOTOROLA RF DEVICE DATA
MRF175GU MRF175GV
7
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
U
G
Q RADIUS 2 PL
M
M
M
0.25 (0.010)
T
A
B
1
2
4
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
E
G
H
J
K
N
Q
R
U
MAX
1.350
0.410
0.230
0.235
0.070
0.440
0.112
0.006
0.215
0.875
0.070
0.410
MIN
33.79
9.40
4.83
5.47
1.27
10.92
2.59
0.11
MAX
34.29
10.41
5.84
5.96
1.77
11.18
2.84
0.15
1.330
0.370
0.190
0.215
0.050
0.430
0.102
0.004
0.185
0.845
0.060
0.390
–B–
R
5
3
K
D
4.83
21.46
1.52
9.91
5.33
22.23
1.78
J
N
10.41
E
1.100 BSC
27.94 BSC
H
STYLE 2:
SEATING
PLANE
PIN 1. DRAIN
2. DRAIN
3. GATE
–T–
–A–
C
4. GATE
5. SOURCE
CASE 375–04
ISSUE D
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
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MRF175GU/D
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