MRF171A [TE]
MOSFET BROADBAND RF POWER FET; MOSFET宽带射频功率场效应管
| 型号： | MRF171A |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | MOSFET BROADBAND RF POWER FET |
| 文件： | 总12页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
by MRF171A/D
The RF MOSFET Line
N–Channel Enhancement–Mode MOSFET
Designed primarily for wideband large–signal output and driver stages from
30–200 MHz.
45 W, 150 MHz
•
Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 45 Watts
MOSFET BROADBAND
RF POWER FET
Power Gain = 17 dB (Min)
Efficiency = 60% (Min)
•
•
•
•
•
Excellent Thermal Stability, Ideally Suited for Class A Operation
Facilitates Manual Gain Control, ALC and Modulation Techniques
100% Tested for Load Mismatch At All Phase Angles with 30:1 VSWR
Low Crss – 8 pF @ V
Gold Top Metal
= 28 V
DS
D
Typical Data For Power Amplifier Applications in Industrial,
Commercial and Amateur Radio Equipment
•
Typical Performance at 30 MHz, 28 Vdc
Output Power = 30 Watts (PEP)
Power Gain = 20 dB (Typ)
CASE 211–07, STYLE 2
G
S
Efficiency = 50% (Typ)
IMD(d3) (30 Watts PEP) –32 dB (Typ)
MAXIMUM RATINGS
Rating
Symbol
Value
65
Unit
Vdc
Vdc
Adc
Adc
Drain–Gate Voltage
Drain–Gate Voltage (R
Gate–Source Voltage
V
DSS
= 1.0 MΩ)
V
DGR
65
GS
V
GS
±20
4.5
Drain Current — Continuous
I
D
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
115
0.66
Watts
W/°C
C
Storage Temperature Range
Operating Junction Temperature
T
–65 to +150
200
°C
°C
stg
T
J
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
Symbol
Max
Unit
R
1.52
°C/W
θJC
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(I = 50 mA, V = 0)
V
65
—
—
80
—
—
—
Vdc
mAdc
µAdc
(BR)DSS
D
GS
Zero Gate Voltage Drain Current
(V = 0, V = 28 V)
I
1.0
1.0
DSS
GS
Gate–Source Leakage Current
(V = 20 V, V = 0)
DS
I
GSS
GS DS
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
1
ELECTRICAL CHARACTERISTICS – continued (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(V = 10 V, I = 50 mA)
V
1.5
—
2.5
1.0
1.8
4.5
—
Vdc
V
GS(th)
DS
Drain–Source On–Voltage
(V = 10 V, I = 3 A)
D
V
DS(on)
GS
Forward Transconductance
(V = 10 V, I = 2 A)
D
g
fs
1.4
—
mhos
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
—
—
—
60
70
8
—
—
—
pF
pF
pF
iss
(V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
Output Capacitance
(V = 28 V, V
C
oss
= 0, f = 1.0 MHz)
DS GS
Reverse Transfer Capacitance
(V = 28 V, V = 0, f = 1.0 MHz)
C
rss
DS GS
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(V
DD
= 28 V, P
out
= 45 W, f = 150 MHz, I
= 25 mA)
= 25 mA)
= 25 mA,
G
17
60
19.5
70
—
—
dB
%
DQ
DQ
DQ
ps
Drain Efficiency
(V = 28 V, Pout = 45 W, f = 150 MHz, I
η
DD
Electrical Ruggedness
(V = 28 V, P = 45 W, f = 150 MHz, I
No Degradation in Output Power
DD out
VSWR 30:1 at All Phase Angles)
TYPICAL FUNCTIONAL TESTS (SSB)
Common Source Power Gain
(V
DD
= 28 V, P
out
= 30 W (PEP), I
f = 30; 30.001 MHz)
= 100 mA,
= 100 mA,
= 100 mA,
G
—
—
—
20
50
—
—
—
dB
%
DQ
DQ
DQ
ps
Drain Efficiency
(V
DD
f = 30; 30.001 MHz)
= 28 V, P
= 30 W (PEP), I
η
out
Intermodulation Distortion
(V
DD
f = 30; 30.001 MHz)
–32
dB
= 28 V, P
= 30 W (PEP), I
IMD(d3)
out
REV 2
2
RFC1
V
DD
28 Vdc
+
BIAS
+
R2
+
R3
C6
C14
C11
C13
C12
Z7
V
–
DC
R1
RFC2
Z5
RF
OUTPUT
L3
Z6
L4
RF
INPUT
Z1
Z2
L1
Z3
L2
Z4
C10
C9
C7
C8
DUT
C1
C3
C4
C2
C5
C1, C10
C2, C5, C8
C3
C4
C6, C14
C7
C9
C11, C12
C13
L1
1000 pF, Chip Capacitor
R2
R3
Z1
Z2
Z3
Z4
Z5
Z6
1 kΩ, 1/2 W Chip Resistor
10 kΩ, 1/2 W Chip Resistor
0.160″ x 0.400″ Microstrip
0.160″ x 0.600″ Microstrip
0.160″ x 0.600″ Microstrip
0.160″ x 0.900″ Microstrip
0.160″ x 0.800″ Microstrip
0.160″ x 0.800″ Microstrip
0.160″ x 0.400″ Microstrip
Ferroxcube VK200–19/4B
2–20 pF, Trimmer Capacitors, Johanson
43 pF, 100 mil Chip Capacitor, ATC
120 pF, 100 mil Chip Capacitor, ATC
0.1 µF, Capacitors
50 pF, 100 mil Chip Capacitor, ATC
12 pF, 100 mil Chip Capacitor, ATC
680 pF, Feedthru Capacitors
50 µF, 50 V, Electrolytic Capacitor
2 Turns, 0.297″ ID, 18 AWG
1–1/2 Turns, 0.265″ ID, 18 AWG
1–1/4 Turns, 0.234″ ID, 18 AWG
1–1/2 Turns, 0.250″ ID, 18 AWG
68 Ω, 1/2 W Chip Resistor
Z7
RFC1
RFC2
Board
L2
L3
L4
R1
10 Turns, 0.250″ ID, 20 AWG, Enamel
0.062″, G10 1 oz. Copper Clad
Both Sides, ε = 2.56
r
Figure 1. MRF171A 150 MHz Test Circuit
REV 2
3
28 V
+
L2
+
C8
C9
C10
C11
L1
V
GG
+
C1
C2
C4
C5
RF
OUTPUT
R1
R2
T2
C7
C3
R3
RF
INPUT
DUT
R4
T1
C6
C1, C3, C5, C6
C2, C4
C7
0.1 µF, Chip Capacitors
1000 pF, Chip Capacitors
68 pF, Dipped Mica
L1, L2
R1, R2
R3
VK200 20/4B Ferrite Choke
200 Ω, 1/2 W Carbon
3 Ω, 1/2 W Carbon
C8
C9, C10
C11
0.1 µF, Ceramic Cap or Equivalent
680 pF, Feedthru Capacitors
250 µF, 50 V, Electrolytic Capacitor
R4
T1
T2
270 Ω, 2 W Carbon
4:1 Impedance Broadband Transformer
1:4 Impedance Broadband Transformer
Figure 2. MRF171A 30 MHz Test Circuit
REV 2
4
TYPICAL CHARACTERISTICS
60
50
40
30
20
10
0
70
f = 100 MHz
60
50
40
30
20
10
0
150 MHz
200 MHz
V
= 28 V
= 100 mA
DD
I
DQ
V
I
DQ
= 28 V
= 25 mA
DD
f = 30 MHz
TONE SEPARATION = 1 kHz
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
2.0
P , INPUT POWER (WATTS) PEP
in
P , INPUT POWER (WATTS)
in
Figure 3. Output Power versus Input Power
Figure 4. Output Power versus Input Power
70
60
50
40
30
20
10
0
18
16
14
f = 100 MHz
P
= 1.0 W
in
150 MHz
200 MHz
12
10
8
0.5 W
0.1 W
6
4
I
= 25 mA
DQ
f = 100 MHz
V
I
DQ
= 13.5 V
= 25 mA
DD
2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
12
14
16
, DRAIN SUPPLY VOLTAGE (VOLTS)
DD
18
20
22
24
26
28
P , INPUT POWER (WATTS)
in
V
Figure 5. Output Power versus Input Power
Figure 6. Output Power versus Supply Voltage
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
P
= 4.0 W
in
P
= 2.0 W
in
3.0 W
2.0 W
1.0 W
0.3 W
I
= 25 mA
DQ
f = 150 MHz
I
= 25 mA
DQ
f = 200 MHz
12
14
16
18
20
22
24
26
28
12
14
16
18
V , SUPPLY VOLTAGE (VOLTS)
DD
20
22
24
26
28
V
DD
, SUPPLY VOLTAGE (VOLTS)
Figure 7. Output Power versus Supply Voltage
Figure 8. Output Power versus Supply Voltage
REV 2
5
TYPICAL CHARACTERISTICS
3.0
2.5
2.0
1.5
1.0
0.5
0.0
45
V
= 10 V
P = CONSTANT
in
40
35
30
25
20
15
10
5
DS
TYPICAL DEVICE SHOWN,
= 2.5 V
V
= 28 V
DD
DQ
f = 150 MHz
V
GS(th)
I
= 25 mA
TYPICAL DEVICE SHOWN,
V
GS(th)
= 2.5 V
0
–1.0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, GATE–SOURCE VOLTAGE (VOLTS)
–0.5
0
0.5
1.0
1.5
2.0
2.5
V
GS
V , GATE–SOURCE VOLTAGE (VOLTS)
GS
Figure 9. Drain Current versus Gate Voltage
(Transfer Characteristics)
Figure 10. Output Power versus Gate Voltage
1000
100
10
C
oss
C
iss
C
rss
V
= 0 V
GS
f = 1 MHz
1
0
5
10
15
20
25 30
V , DRAIN–SOURCE VOLTAGE (VOLTS)
DS
Figure 11. Capacitance versus Drain–Source Voltage
REV 2
6
Z = 10 Ω
o
f = 30 MHz
f = 30 MHz
Z
*
OL
200
150
100
Z
in
200
150
100
V
DD
= 28 V, I = 25 mA, P = 45 W
DQ out
f
Z
(1)
Ω
Z (2)
OL
Ω
in
MHz
30
12.8 – j3.6
3.1 – j11.6
2.0 – j6.5
2.2 – j6.0
11.5 – j0.99
4.9 – j4.9
4.2 – j4.9
3.0 – j2.9
100
150
200
(1) 68 Ω shunt resistor gate–to–ground.
(2) Z
OL
=
Conjugate of the optimum load impedance
into which the device operates at a given
output power, voltage and frequency.
Figure 12. Large–Signal Series Equivalent Input/Output Impedance
REV 2
7
(Scale 1:1)
Figure 13. MRF171A Circuit Board Photo Master
REV 2
8
Table 1. Common Source S–Parameters (V
= 12.5 V, I = 0.5 A)
D
DS
S
11
S
21
S
12
S
22
f
MHz
|S
|
φ
–162
–166
–169
–170
–172
–173
–174
–174
–175
–175
–176
–176
–176
–176
–177
–177
–177
–177
–177
–178
–178
–178
–178
–178
–178
–179
–179
–179
–179
–179
–180
–180
180
|S
|
φ
|S
|
φ
|S
|
φ
–166
–171
–172
–174
–176
–175
–174
–176
–177
–176
–175
–176
–177
–177
–177
–177
–177
–178
–177
–178
–179
–180
–178
–179
–180
–180
179
11
21
12
22
30
0.801
0.809
0.810
0.808
0.814
0.811
0.811
0.814
0.812
0.816
0.816
0.817
0.821
0.820
0.821
0.824
0.825
0.830
0.831
0.831
0.836
0.836
0.839
0.844
0.842
0.845
0.849
0.849
0.855
0.856
0.856
0.858
0.860
0.862
0.866
0.867
0.869
0.870
0.872
0.876
0.877
0.879
11.90
9.12
7.29
6.22
5.30
4.56
4.04
3.66
3.37
3.00
2.75
2.57
2.37
2.27
2.08
1.93
1.89
1.74
1.67
1.62
1.48
1.43
1.37
1.30
1.28
1.21
1.14
1.12
1.06
1.03
0.96
0.96
0.93
0.91
0.86
0.84
0.82
0.78
0.77
0.73
0.69
0.68
96
0.026
0.028
0.027
0.028
0.028
0.027
0.027
0.027
0.027
0.027
0.027
0.027
0.027
0.027
0.026
0.027
0.027
0.027
0.027
0.026
0.027
0.027
0.028
0.028
0.028
0.027
0.027
0.029
0.029
0.030
0.031
0.030
0.031
0.033
0.034
0.036
0.035
0.035
0.037
0.039
0.040
0.041
13
0.811
0.812
0.831
0.824
0.831
0.837
0.829
0.846
0.842
0.850
0.849
0.851
0.863
0.853
0.838
0.861
0.873
0.873
0.874
0.870
0.909
0.865
0.873
0.882
0.887
0.881
0.869
0.852
0.891
0.889
0.868
0.888
0.875
0.901
0.913
0.897
0.893
0.880
0.923
0.915
0.903
0.921
40
91
88
85
82
81
80
77
75
74
73
72
69
67
66
65
64
62
60
59
57
56
57
54
52
52
50
50
49
46
45
46
44
44
43
41
42
40
39
37
38
39
11
11
9
50
60
70
9
80
10
13
12
11
13
14
17
17
17
19
19
21
23
25
28
27
26
30
34
36
37
36
39
42
43
47
47
49
48
50
52
54
57
55
54
56
58
90
100
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250
260
270
280
290
300
310
320
330
340
350
360
370
380
390
400
410
420
430
440
–180
–179
180
180
179
–180
179
180
180
178
179
178
179
178
179
180
179
178
178
176
178
177
178
178
REV 2
9
Table 1. Common Source S–Parameters (V
= 12.5 V, I = 0.5 A) (continued)
D
DS
S
11
S
21
S
12
S
22
f
MHz
|S
|
φ
177
177
177
176
176
176
|S
|
φ
|S
|
φ
|S
|
φ
178
175
176
176
176
175
11
21
12
22
450
460
470
480
490
500
0.882
0.884
0.886
0.885
0.886
0.887
0.68
0.65
0.62
0.62
0.61
0.59
36
0.040
0.041
0.041
0.044
0.046
0.047
61
0.926
0.937
0.896
0.907
0.907
0.916
36
35
33
32
31
59
60
61
63
65
Table 2. Common Source S–Parameters (V
= 28 V, I = 0.5 A)
D
DS
f
|S
11
|
φ
|S
21
|
φ
|S
12
|
φ
|S
22
|
φ
MHz
30
0.783
0.793
0.793
0.791
0.798
0.795
0.795
0.799
0.798
0.802
0.801
0.803
0.809
0.808
0.809
0.814
0.815
0.822
0.824
0.825
0.831
0.830
0.832
0.838
0.837
0.840
0.844
0.844
0.849
0.852
0.852
0.855
0.856
–152
–158
–162
–165
–167
–169
–170
–170
–171
–172
–172
–173
–173
–173
–174
–174
–175
–175
–175
–175
–176
–176
–176
–176
–176
–177
–177
–177
–178
–178
–178
–178
–178
17.10
13.20
10.50
9.00
7.68
6.63
5.85
5.30
4.86
4.35
3.97
3.70
3.42
3.27
2.99
2.77
2.71
2.49
2.37
2.23
2.08
2.00
1.92
1.81
1.79
1.69
1.60
1.55
1.48
1.43
1.35
1.32
1.29
100
94
90
87
83
82
80
77
75
74
72
71
68
66
65
63
62
60
57
57
56
54
55
53
50
50
48
48
47
44
43
44
41
0.025
0.027
0.027
0.027
0.026
0.026
0.026
0.026
0.026
0.025
0.025
0.025
0.025
0.025
0.024
0.025
0.024
0.024
0.024
0.024
0.024
0.024
0.024
0.024
0.025
0.025
0.025
0.025
0.026
0.027
0.028
0.028
0.029
17
0.730
0.730
0.754
0.746
0.760
0.770
0.760
0.779
0.775
0.785
0.788
0.791
0.808
0.796
0.783
0.809
0.820
0.826
0.836
0.807
0.839
0.818
0.828
0.829
0.834
0.832
0.836
0.814
0.848
0.855
0.833
0.861
0.842
–158
–164
–167
–169
–171
–170
–170
–172
–174
–172
–171
–172
–173
–172
–174
–173
–174
–175
–175
–175
–175
–176
–174
–175
–175
–176
–177
–175
–175
–177
–177
–177
–176
40
13
12
11
10
10
12
10
11
13
14
15
14
15
18
19
21
22
24
26
29
29
33
35
37
39
39
44
46
45
48
49
53
50
60
70
80
90
100
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250
260
270
280
290
300
310
320
330
340
350
REV 2
10
Table 2. Common Source S–Parameters (V
= 28 V, I = 0.5 A) (continued)
D
DS
f
|S
11
|
φ
|S
21
|
φ
|S
12
|
φ
|S
22
|
φ
MHz
360
370
380
390
400
410
420
430
440
450
460
470
480
490
500
0.859
0.863
0.864
0.867
0.869
0.872
0.876
0.877
0.879
0.882
0.884
0.885
0.885
0.886
0.887
–179
–179
–179
–179
–180
–180
180
1.25
1.18
1.15
1.12
1.07
1.05
1.00
0.95
0.93
0.91
0.88
0.84
0.83
0.81
0.80
42
0.030
0.030
0.031
0.032
0.032
0.035
0.036
0.037
0.038
0.039
0.041
0.040
0.042
0.044
0.045
54
0.872
0.886
0.864
0.862
0.853
0.898
0.889
0.884
0.902
0.901
0.922
0.877
0.892
0.891
0.900
–178
–178
–178
–179
–177
–179
180
39
38
39
37
35
34
35
34
32
32
32
30
29
28
55
55
57
60
60
60
62
64
65
64
66
66
68
68
179
–179
–179
–180
179
179
179
178
178
179
178
179
177
179
177
178
REV 2
11
PACKAGE DIMENSIONS
A
U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
M
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
M
1
Q
INCHES
DIM MIN MAX
0.990 24.39
MILLIMETERS
MIN
MAX
25.14
9.90
7.13
5.96
2.66
4.57
0.15
10.28
50
4
A
B
C
D
E
0.960
0.370
0.229
0.215
0.085
0.150
0.004
0.395
40
0.390
0.281
0.235
0.105
0.108
0.006
9.40
5.82
5.47
2.16
3.81
0.11
B
R
2
3
H
J
D
K
M
Q
R
S
0.405 10.04
S
K
50
40
0.113
0.245
0.790
0.720
0.130
0.255
2.88
6.23
3.30
6.47
20.57
18.54
0.810 20.07
0.730 18.29
U
STYLE 2:
PIN 1. SOURCE
J
2. GATE
3. SOURCE
4. DRAIN
C
H
E
SEATING
PLANE
CASE 211–07
ISSUE N
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 2
12
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