MRF173CQ [TE]
N-CHANNEL BROADBAND RF POWER MOSFET; N沟道宽带射频功率MOSFET
| 型号： | MRF173CQ |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | N-CHANNEL BROADBAND RF POWER MOSFET |
| 文件： | 总6页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
by MRF173CQ/D
The RF MOSFET Line
R
F
P owe r
E
M
R
F
1
7
3
C
Q
F
i
e
l
d
f
f
e
c
t
T
r
a
n
s
i
s
t
o
r
N–Channel Enhancement Mode MOSFET
Designed for broadband commercial and military applications up to 200 MHz
frequency range. The high–power, high–gain and broadband performance of
this device makes possible solid state transmitters for FM broadcast or TV
channel frequency bands.
80 W, 28 V, 175 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
•
Guaranteed Performance at 150 MHz, 28 V:
Output Power = 80 W
Gain = 11 dB (13 dB Typ)
Efficiency = 55% Min. (60% Typ)
•
•
•
•
•
Low Thermal Resistance
D
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability
Low Noise Figure — 1.5 dB Typ at 2.0 A, 150 MHz
Excellent Thermal Stability; Suited for Class A Operation
G
S
MAXIMUM RATINGS
Rating
Symbol
Value
65
Unit
Vdc
Vdc
Vdc
Adc
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
V
DSS
V
DGO
65
V
GS
±40
9.0
CASE 316–01, STYLE 2
I
D
Total Device Dissipation @ T = 25°C
P
D
220
Watts
C
Derate above 25°C
1.26
W/°C
Storage Temperature Range
Operating Temperature Range
T
–65 to +150
200
°C
°C
stg
T
J
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
0.8
°C/W
θ
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (V = 0 V, V = 0 V)
I
D
= 50 mA
V
(BR)DSS
65
—
—
—
—
—
—
V
DS
GS
Zero Gate Voltage Drain Current (V = 28 V, V = 0 V)
I
2.0
1.0
mA
µA
DS
GS
DSS
GSS
Gate–Source Leakage Current (V = 40 V, V = 0 V)
I
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage (V = 10 V, I = 50 mA)
V
1.0
—
3.0
—
6.0
1.4
—
V
V
DS
D
GS(th)
Drain–Source On–Voltage (V
, V = 10 V, I = 3.0 A)
DS(on) GS
V
DS(on)
D
Forward Transconductance (V = 10 V, I = 2.0 A)
g
fs
1.8
2.2
mhos
DS
D
(continued)
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 0
1
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Input Capacitance (V = 28 V, V = 0 V, f = 1.0 MHz)
C
—
—
—
110
105
10
—
—
—
pF
pF
pF
DS
GS
iss
Output Capacitance (V = 28 V, V = 0 V, f = 1.0 MHz)
C
oss
DS
GS
Reverse Transfer Capacitance (V = 28 V, V = 0 V, f = 1.0 MHz)
C
rss
DS
GS
FUNCTIONAL CHARACTERISTICS
Noise Figure (V = 28 V, f = 150 MHz, I = 50 mA)
NF
—
11
1.5
13
—
—
dB
dB
DD
DQ
Common Source Power Gain
G
ps
(V = 28 V, P = 80 W, f = 150 MHz, I = 50 mA)
DD
out
DQ
Drain Efficiency (V = 28 V, P = 80 W, f = 150 MHz, I = 50 mA)
η
55
60
—
%
DD
out
DQ
Electrical Ruggedness
ψ
No Degradation in Output Power
(V = 28 V, P = 80 W, f = 150 MHz, I = 50 mA)
DD
out
DQ
Load VSWR 30:1 at all phase angles
Series Equivalent Input Impedance
Z
—
—
1.35–j5.15
2.72–j149
—
—
Ohms
Ohms
in
(V = 28 V, P = 80 W, f = 150 MHz, I = 50 mA)
DD
out
DQ
Series Equivalent Output Impedance
(V = 28 V, P = 80 W, f = 150 MHz, I = 50 mA)
Z
out
DD
out
DQ
R F C 1
V
D D
=
2
8
V
R
2
C
11
C1 2
+
V
dc
+
-
+
-
R
1
C
8
C
9
Z
1
C
1
0
C
1
3
C1 4
-
R F C 2
R
F
D
.
U
.
T
.
O
U
T
P
U
T
L
3
L
4
C1 6
R
F
R
3
IN PU T
C
1
L
1
L2
C
1
5
C
4
C
5
C
6
C 7
C
2
C 3
C1, C15 — 470 pF Unelco
C2, C3, C5 — 9–180 pF, Arco 463
C4, C6 — 15 pF, Unelco
L3 — #14 AWG Hairpin 0.8″ long
L4 — #14 AWG Hairpin 1.1″ long
RFC1 — Ferroxcube VK200–19/4B
C7 — 5–80 pF, Arco 462
C8, C10, C14, C16 — 0.1 µF
C9, C13 — 50 µF, 50 Vdc
RFC2 — 18 Turns #18 AWG Enameled, 0.3″ ID
R1 — 10 kΩ, 10 Turns Bourns
R2 — 1.8 kΩ, 1/4 W
C11, C12 — 680 pF, Feed Through
L1 — #16 AWG, 1–1/4 Turns, 0.3″ ID
L2 — #16 AWG Hairpin 1″ long
R3 — 10 kΩ, 1/2 W
Z1 — 1N5925A Motorola Zener
Figure 1. 150 MHz Test Circuit
REV 0
2
TYPICAL CHARACTERISTICS
1
2
0
8
6
0
0
0
0
8
7
6
5
0
0
0
0
f
=
1
0
0
M
H
z
1
5
0
M Hz
1
f
=
1
00
M
H
z
2
0
0
M
H
z
1
5
0
M
H
z
4
3
2
0
0
0
2
0
0
M
H
z
4
2
0
0
V
=
2
8
V
D D
I
=
5
0
m A
D Q
V
D D
=
1
3
.
5
V
1
0
I
=
5
0
m
A
D Q
0
0
0
2
.
0
4
.
0
6
.
0
8
.0
1
0
1
2
1 4
0
1
2
3
4
5
6
7
8
9
1 0
P ,
in
I
N
P
U
T
P
OW
E
R
(
WAT
T
S)
P ,
i n
I
N
P
U
T
P
O
WE
R
(
W
A
T
T
S
)
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Input Power
1
4
0
1
1
1
4
0
0
I
f
=
5
0
m
A
I
=
D Q
5
0
m A
1
1
20
2
D
Q
P
in
=
4
.
0
W
P
i n
=
8
.
0
W
=
1
0
0
M
H
z
f
=
1
5
0
M
H
z
0
8
6
0
0
0
00
8 0
6 0
3
.
0
0
W
W
6
.
.
0
0
W
2
1
.
4
2
W
W
.0
W
.
0
4
2
0
0
4
2
0
0
0
0
1
0
1
2
1
4
1
6
1
8
2
0
2
2
2
4
2
6
2
8
3 0
1
0
1
2
1
4
1
6
1
8
2
0
2
2
2
4
2
6
2
8
3 0
V
D D
,
S
UPP
LY
V
O
L
T
A
GE
(
V
O
L
T
S
)
V
D D
,
S
U
P
P
L
Y
V
O
L
T
A
G
E
(
V
O
L
T
S
)
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
2
2
1
1
1
1
1
2
0
8
6
4
2
0
0
0
0
0
1
4
0
I
f
=
5
0
m
A
1
1
2
0
P
V
=
=
8
0
W
V
D
Q
o
u
t
P
=
1
4
W
i
n
=
2
0
0
M
H
z
2
8
D
D
I
D Q
=
5
0
m
A
0
8
6
0
0
0
1
0
W
6
4
.
0
W
.
0
W
8
.
.
.
.
4
2
0
0
6
4
2
0
2
0
4
0
6
0
8
0
1
0
F
0
R
1
2
E
0
1
Y
4
0
1
(M Hz)
6
0
1
8
0
2
0
0
2
2
0
1
0
1
2
1
4
1
6
1
8
2
0
2
2
2
4
2
6
2
8
3
0
f
,
E
Q
U
N
C
V
,
S
U
P
P
L
Y
V
O
L
T
A
G
E
(
V
O
L
T
S
)
D
D
Figure 7. Power Gain versus Frequency
Figure 6. Output Power versus Supply Voltage
REV 0
3
8
7
6
5
4
3
2
1
0
0
0
0
0
0
0
0
0
6
5
4
3
2
1
. 0
. 0
. 0
. 0
. 0
. 0
0
f
=
1
5
0
M Hz
V
V
=
1
0
V
D S
P
V
I
=
C O NS TA NT
V
in
D S
=
3
.
0
V
=
2
8
G S (t h)
=
5
0
m A
D Q
V
=
3
.
0
V
G S(t h )
0
1
.0
2
.0
3
.0
4
.0
5
.0
6 .0
-
1
4
-
12
-
1
0
-
8
.
0
-
6
.
0
-
4
.
0
-
2
.
0
0
2
.
0
4
.
0
6
.
0
V
G S
,
G
AT
E
-
S
O
U
R
C
E
V
O
L
T
A
GE
(
VO
L
T
S
)
V
G S
,
G
AT
E
-
S
O
U
R
C
E
V
O
L
T
A
G
E
(V O LTS )
Figure 8. Output Power versus Gate Voltage
Figure 9. Drain Current versus Gate Voltage
1
1
1
.
.
.
2
1
0
4
3
3
2
2
6
0
4
0
1 4 0
C
i ss
V
D S
=
2
8
V
1 2 0
0
0
0
1
0
0
0
0
0
0
V
=
0
V
I
=
3
.
0
A
A
G S
R
D
F
E
Q
=
1
M
H
z
8
6
4
2
1. 0
5
0
0
m
A
1
1
8
0
0
0
0
.
9
C
o
s
s
2
6
5
0
mA
0
0
.
8
C
r s s
0
0
.
7
-
2
8
2
5
0
2
5
5
0
7
5
1
0
0
1
2
5
1
5
0
1
7
5
0
4
8
1
2
1
6
2
0
2
4
V
D S
,
D
R
AI
N
-
S
O
U
R
C
E
V
O
L
T
A
G
E
(
V
O
L
T
S
)
T
,
C
A
S
E
T
E
M
P
E
R
A
T
U
R
E
°
)
(
C
C
Figure 10. Gate–Source Voltage versus
Case Temperature
Figure 11. Capacitance versus Drain Voltage
1
0
0
5
.
2
1
0
.
.
.
0
0
5
T
=
°
C
2
5
C
0
0
.
.
2
1
1
.
0
2
.
0
4
.
0
6
.
0
1
0
2
0
4
0
6
0
1
0
0
V
D S
,
D
R
AI
N
-
S
O
U
R
C
E
V
O
L
T
A
G
E
(
V
O
L
T
S
)
Figure 12. DC Safe Operating Area
REV 0
4
DESIGN CONSIDERATIONS
applications. The MRF173CQ was characterized at IDQ =
The MRF173CQ is a RF MOSFET power N–channel en-
hancement mode field–effect transistor (FET) designed for
VHF power amplifier applications. M/A-COM's RF MOSFETs
feature a vertical structure with a planar design, thus avoid-
ing the processing difficulties associated with V–groove pow-
er FETs.
M/A-COM Application Note AN211A, FETs in Theory and
Practice, is suggested reading for those not familiar with the
construction and characteristics of FETs.
50 mA, which is the suggested minimum value of IDQ. For
special applications such as linear amplification, IDQ may
have to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current. There-
fore, the gate bias circuit may generally be just a simple re-
sistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL
Power output of the MRF173CQ may be controlled from its
rated value down to zero (negative gain) by varying the dc
gate voltage. This feature facilitates the design of manual gain
control, AGC/ALC and modulation systems. (see Figure 8.)
The major advantages of RF power FETs include high
gain, low noise, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mis-
matched loads without suffering damage. Power output can
be varied over a wide range with a low power dc control sig-
nal, thus facilitating manual gain control, ALC and modula-
tion.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar VHF transistors are suitable for MRF173CQ. See
M/A-COM Application Note AN721, Impedance Matching
Networks Applied to RF Power Transistors. The higher input
impedance of RF MOSFETs helps ease the task of broad-
band network design. Both small–signal scattering parame-
ters and large–signal impedances are provided. While the
s–parameters will not produce an exact design solution for
high power operation, they do yield a good first approxima-
tion. This is an additional advantage of RF MOS power FETs.
DC BIAS
The MRF173CQ is an enhancement mode FET and,
therefore, does not conduct when drain voltage is ap-
plied. Drain current flows when a positive voltage is ap-
plied to the gate. See Figure 9 for a typical plot of drain
current versus gate voltage. RF power FETs require for-
ward bias for optimum performance. The value of quies-
cent drain current (IDQ ) is not critical for many
REV 0
5
PACKAGE DIMENSIONS
F
D
4
N O TE S :
1. F LAN G E I S I SO LAT ED I N A LL S TY LE S.
R
Q
K
3
INCHES
DIM MIN MAX
MILLIMETERS
MIN
0. 960
0. 490
MAX
0. 990
0. 510
0. 300
0. 220
0. 120
0. 210
0. 730
0. 006
0. 440
0. 160
0. 170
0. 130
0. 130
0. 495
A
24. 38
12. 45
5. 97
5. 33
2. 16
5. 08
18. 29
0. 10
10. 29
3. 81
3. 81
2. 92
3. 05
11. 94
25. 14
12. 95
1
B
C
D
E
F
7. 62 0. 235
5. 58 0. 210
3. 04 0. 085
5. 33 0. 200
2
H
J
18. 54
0. 720
L
0. 15 0. 004
11. 17 0. 405
4. 06 0. 150
4. 31 0. 150
K
L
B
C
J
N
Q
R
U
3. 30
3. 30 0. 120
12. 57 0. 470
0. 115
E
N
H
A
S TY LE 2:
P IN 1. B AS E
U
2. C O LLE C TO R
3. B AS E
4. E MIT T ER
CASE 316–01
ISSUE D
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 0
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