MRF175GU [ASI]
RF POWER FIELD-EFFECT TRANSISTOR; 射频功率场效应晶体管
| 型号： | MRF175GU |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | RF POWER FIELD-EFFECT TRANSISTOR |
| 文件： | 总1页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MRF175GU
RF POWER FIELD-EFFECT TRANSISTOR
DESCRIPTION:
PACKAGE STYLE
The ASI MRF175GU is a N-Channel
Enhancement-Mode Push Pull
MOSFET, Designed for FM, and TV
Solid State Transmitter Applications up
to 500 MHz.
MAXIMUM RATINGS
26 A
ID
65 V
VDSS
PDISS
TJ
400 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.44 OC/W
TSTG
θJC
1 = DRAIN
4 = GATE(2)
2 = DRAIN(2)
5 = SOURCE (1&2) -CASE
3 = GATE(1)
CHARACTERISTICS TC = 25 OC
NONE
SYMBOL
V(BR)DSS
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
ID = 50 mA
VGS = 0 V
VGS = 0 V
VGS = 20 V
VDS = 10 V
VGS = 10 V
VDS = 10 V
65
V
mA
µA
IDSS
IGSS
V
DS = 28 V
DS = 0 V
2.5
1.0
6.0
1.5
V
VGS(th)
VDS(on)
gfs
ID =100 mA
ID = 5.0 A
ID = 2.5 A
1.0
2.0
3.0
V
V
3.0
mhos
180
200
20
Ciss
Coss
Crss
pF
VDS = 28 V
VGS = 0 V
f = 1.0 MHz
Gps
10
50
10:1
12
55
---
dB
%
---
VDD = 28 V
IDQ = 2 X 100 mA
POUT = 150 W
f = 400 MHz
η
ψ
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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