MRF173 [MOTOROLA]
N-CHANNEL BROADBAND RF POWER MOSFETs; N沟道宽带射频功率MOSFET
| 型号： | MRF173 |
| 厂家： | 
MOTOROLA |
| 描述： | N-CHANNEL BROADBAND RF POWER MOSFETs |
| 文件： | 总8页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Order this document
by MRF173/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement Mode MOSFETs
Designed for broadband commercial and military applications up to 200 MHz
frequency range. The high–power, high–gain and broadband performance of
these devices make possible solid state transmitters for FM broadcast or TV
channel frequency bands.
80 W, 28 V, 175 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFETs
•
Guaranteed Performance at 150 MHz, 28 V:
Output Power = 80 W
Gain = 11 dB (13 dB Typ)
Efficiency = 55% Min. (60% Typ)
•
•
•
•
•
Low Thermal Resistance
D
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability
Low Noise Figure — 1.5 dB Typ at 2.0 A, 150 MHz
Excellent Thermal Stability; Suited for Class A Operation
G
S
CASE 211–11, STYLE 2
(MRF173)
MAXIMUM RATINGS
Rating
Symbol
Value
65
Unit
Vdc
Vdc
Vdc
Adc
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
V
DSS
V
DGO
65
V
GS
±40
9.0
I
D
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
220
1.26
Watts
W/°C
C
CASE 316–01, STYLE 2
(MRF173CQ)
Storage Temperature Range
Operating Temperature Range
T
–65 to +150
200
°C
°C
stg
T
J
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
0.8
°C/W
θJC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (V
= 0 V, V
= 0 V)
= 0 V)
I
= 50 mA
V
(BR)DSS
65
—
—
—
—
—
—
V
DS
GS
D
Zero Gate Voltage Drain Current (V
= 28 V, V
I
2.0
1.0
mA
µA
DS
= 40 V, V
GS
DSS
Gate–Source Leakage Current (V
= 0 V)
DS
I
GS
GSS
ON CHARACTERISTICS
Gate Threshold Voltage (V
DS
= 10 V, I = 50 mA)
V
1.0
—
3.0
—
6.0
1.4
—
V
V
D
GS(th)
V
DS(on)
Drain–Source On–Voltage (V
, V
DS(on) GS
= 10 V, I = 3.0 A)
D
Forward Transconductance (V = 10 V, I = 2.0 A)
g
fs
1.8
2.2
mhos
DS
D
(continued)
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
Motorola, Inc. 1997
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Input Capacitance (V
= 28 V, V
= 0 V, f = 1.0 MHz)
C
—
—
—
110
105
10
—
—
—
pF
pF
pF
DS
GS
iss
Output Capacitance (V
DS
Reverse Transfer Capacitance (V
= 28 V, V
= 0 V, f = 1.0 MHz)
C
oss
GS
= 28 V, V
= 0 V, f = 1.0 MHz)
C
rss
DS
GS
FUNCTIONAL CHARACTERISTICS
Noise Figure (V
DD
= 28 V, f = 150 MHz, I
= 50 mA)
NF
—
11
1.5
13
—
—
dB
dB
DQ
Common Source Power Gain
(V = 28 V, P = 80 W, f = 150 MHz, I
G
ps
= 50 mA)
DD
out
DQ
= 80 W, f = 150 MHz, I = 50 mA)
DQ
Drain Efficiency (V
= 28 V, P
η
55
60
—
%
DD
Electrical Ruggedness
(V = 28 V, P = 80 W, f = 150 MHz, I
out
ψ
No Degradation in Output Power
= 50 mA)
DD
out
DQ
Load VSWR 30:1 at all phase angles
Series Equivalent Input Impedance
MRF173
MRF173
Z
—
—
—
—
2.99–j4.5
2.68–j1.3
1.35–j5.15
2.72–j149
—
—
—
—
Ohms
Ohms
Ohms
Ohms
in
(V
DD
= 28 V, P
= 80 W, f = 150 MHz, I
= 50 mA)
= 50 mA)
= 50 mA)
= 50 mA)
out
DQ
DQ
DQ
DQ
Series Equivalent Output Impedance
(V = 28 V, P = 80 W, f = 150 MHz, I
Z
out
DD
Series Equivalent Input Impedance
(V = 28 V, P = 80 W, f = 150 MHz, I
out
MRF173CQ
MRF173CQ
Z
in
DD
out
Series Equivalent Output Impedance
Z
out
(V
DD
= 28 V, P
= 80 W, f = 150 MHz, I
out
C8
RFC1
V
= 28 V
R2
C11
L3
C12
DD
+
–
V
dc
+
+
–
R1
C9
Z1
C10
C13
C15
C14
–
RFC2
RF
OUTPUT
D.U.T.
L4
C16
RF
INPUT
R3
C1
L1
L2
C4
C5
C6
C7
C2
C3
C1, C15 — 470 pF Unelco
C2, C3, C5 — 9–180 pF, Arco 463
C4, C6 — 15 pF, Unelco
L3 — #14 AWG Hairpin 0.8″ long
L4 — #14 AWG Hairpin 1.1″ long
RFC1 — Ferroxcube VK200–19/4B
C7 — 5–80 pF, Arco 462
C8, C10, C14, C16 — 0.1 µF
C9, C13 — 50 µF, 50 Vdc
RFC2 — 18 Turns #18 AWG Enameled, 0.3″ ID
R1 — 10 kΩ, 10 Turns Bourns
R2 — 1.8 kΩ, 1/4 W
C11, C12 — 680 pF, Feed Through
L1 — #16 AWG, 1–1/4 Turns, 0.3″ ID
L2 — #16 AWG Hairpin 1″ long
R3 — 10 kΩ, 1/2 W
Z1 — 1N5925A Motorola Zener
Figure 1. 150 MHz Test Circuit
MRF173 MRF173CQ
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
120
80
70
60
50
40
30
f = 100 MHz
150 MHz
100
80
60
40
20
0
f = 100 MHz
200 MHz
150 MHz
200 MHz
V
I
= 28 V
= 50 mA
DD
DQ
20
10
0
V
I
= 13.5 V
= 50 mA
DD
DQ
0
2.0
4.0
6.0
P , INPUT POWER (WATTS)
in
8.0
10
12
14
0
1
2
3
4
5
6
7
8
9
10
P
, INPUT POWER (WATTS)
in
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Input Power
140
120
140
120
I
= 50 mA
I
= 50 mA
DQ
DQ
P
= 4.0 W
P
= 8.0 W
in
in
f = 100 MHz
f = 150 MHz
100
80
100
80
3.0 W
6.0 W
2.0 W
1.0 W
4.0 W
2.0 W
60
60
40
20
0
40
20
0
10
12
14
16
V
18
20
22
24
26
28
30
10
12
14
16
V
18
20
22
24
26
28
30
, SUPPLY VOLTAGE (VOLTS)
, SUPPLY VOLTAGE (VOLTS)
DD
DD
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
22
140
20
18
I
= 50 mA
120
P
V
I
= 80 W
= 28 V
= 50 mA
DQ
f = 200 MHz
P
= 14 W
out
DD
DQ
in
16
100
80
10 W
14
12
6.0 W
4.0 W
60
10
8.0
6.0
4.0
2.0
40
20
0
20
40
60
80
100
120
140
160
180
200 220
10
12
14
16
18
20
22
24
26
28
30
f, FREQUENCY (MHz)
V
, SUPPLY VOLTAGE (VOLTS)
DD
Figure 7. Power Gain versus Frequency
Figure 6. Output Power versus Supply Voltage
MOTOROLA RF DEVICE DATA
MRF173 MRF173CQ
3
80
70
60
50
40
30
20
10
0
6.0
5.0
4.0
3.0
2.0
1.0
0
f = 150 MHz
V
V
= 10 V
P
V
I
= CONSTANT
= 28 V
DS
GS(th)
in
DS
= 3.0 V
= 50 mA
DQ
V
= 3.0 V
GS(th)
0
1.0
2.0
3.0
4.0
5.0
6.0
–14 –12
–10 –8.0 –6.0 –4.0 –2.0
0
2.0
4.0
6.0
V
, GATE–SOURCE VOLTAGE (VOLTS)
V
, GATE–SOURCE VOLTAGE (VOLTS)
GS
GS
Figure 8. Output Power versus Gate Voltage
Figure 9. Drain Current versus Gate Voltage
1.2
1.1
1.0
0.9
0.8
420
360
300
240
180
120
60
140
C
iss
V
= 28 V
DS
120
100
80
V
= 0 V
I
= 3.0 A
GS
D
FREQ = 1 MHz
1.0 A
500 mA
60
C
oss
40
20
0
50 mA
150
C
rss
0
0.7
–25
0
25
50
, CASE TEMPERATURE (C°)
75
100
125
175
0
4
8
12
16
20
24
28
V
, DRAIN–SOURCE VOLTAGE (VOLTS)
T
DS
C
Figure 10. Gate–Source Voltage versus
Case Temperature
Figure 11. Capacitance versus Drain Voltage
10
5.0
2.0
1.0
0.5
T
= 25°C
C
0.2
0.1
1.0
2.0
4.0
6.0
10
20
40
60
100
V
, DRAIN–SOURCE VOLTAGE (VOLTS)
DS
Figure 12. DC Safe Operating Area
MRF173 MRF173CQ
4
MOTOROLA RF DEVICE DATA
DESIGN CONSIDERATIONS
applications. The MRF173/CQ was characterized at I =
DQ
The MRF173/CQ is a RF MOSFET power N–channel en-
hancement mode field–effect transistor (FET) designed for
VHF power amplifier applications. Motorola’s RF MOSFETs
feature a vertical structure with a planar design, thus avoid-
ing the processing difficulties associated with V–groove pow-
er FETs.
Motorola Application Note AN211A, FETs in Theory and
Practice, is suggested reading for those not familiar with the
construction and characteristics of FETs.
50 mA, which is the suggested minimum value of I
. For
may
DQ
DQ
special applications such as linear amplification, I
have to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current. There-
fore, the gate bias circuit may generally be just a simple re-
sistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL
Power output of the MRF173/CQ may be controlled from its
rated value down to zero (negative gain) by varying the dc
gate voltage. This feature facilitates the design of manual gain
control, AGC/ALC and modulation systems. (see Figure 8.)
The major advantages of RF power FETs include high
gain, low noise, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mis-
matched loads without suffering damage. Power output can
be varied over a wide range with a low power dc control sig-
nal, thus facilitating manual gain control, ALC and modula-
tion.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar VHF transistors are suitable for MRF173/CQ. See
Motorola Application Note AN721, Impedance Matching
Networks Applied to RF Power Transistors. The higher input
impedance of RF MOSFETs helps ease the task of broad-
band network design. Both small–signal scattering parame-
ters and large–signal impedances are provided. While the
s–parameters will not produce an exact design solution for
high power operation, they do yield a good first approxima-
tion. This is an additional advantage of RF MOS power FETs.
DC BIAS
The MRF173/CQ is an enhancement mode FET and,
therefore, does not conduct when drain voltage is ap-
plied. Drain current flows when a positive voltage is ap-
plied to the gate. See Figure 9 for a typical plot of drain
current versus gate voltage. RF power FETs require for-
ward bias for optimum performance. The value of quies-
cent drain current (I
) is not critical for many
DQ
MOTOROLA RF DEVICE DATA
MRF173 MRF173CQ
5
PACKAGE DIMENSIONS
A
U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
M
1
INCHES
MIN
MILLIMETERS
M
Q
DIM
A
B
C
D
E
H
J
K
MAX
0.990
0.510
0.275
0.235
0.110
0.178
0.007
–––
MIN
24.39
11.82
5.82
5.49
2.14
3.66
0.08
11.05
MAX
25.14
12.95
6.98
5.96
2.79
4.52
0.17
–––
4
0.960
0.465
0.229
0.216
0.084
0.144
0.003
0.435
R
B
2
3
D
M
Q
R
45 NOM
45 NOM
K
0.115
0.246
0.720
0.130
0.255
0.730
2.93
6.25
3.30
6.47
U
18.29
18.54
J
STYLE 2:
PIN 1. SOURCE
C
H
E
SEATING
PLANE
2. GATE
3. SOURCE
4. DRAIN
CASE 211–11
ISSUE N
F
D
4
NOTES:
1. FLANGE IS ISOLATED IN ALL STYLES.
R
K
3
INCHES
MILLIMETERS
DIM
A
B
C
D
E
F
H
J
K
L
N
Q
R
U
MIN
MAX
25.14
12.95
7.62
5.58
3.04
5.33
18.54
0.15
11.17
4.06
4.31
MIN
0.960
0.490
0.235
0.210
0.085
0.200
0.720
0.004
0.405
0.150
0.150
0.115
0.120
0.470
MAX
0.990
0.510
0.300
0.220
0.120
0.210
0.730
0.006
0.440
0.160
0.170
0.130
0.130
0.495
24.38
12.45
5.97
5.33
2.16
5.08
18.29
0.10
10.29
3.81
3.81
2.92
3.05
11.94
1
Q
2
L
B
C
J
3.30
3.30
12.57
E
N
H
A
STYLE 2:
PIN 1. BASE
U
2. COLLECTOR
3. BASE
4. EMITTER
CASE 316–01
ISSUE D
MRF173 MRF173CQ
6
MOTOROLA RF DEVICE DATA
MOTOROLA RF DEVICE DATA
MRF173 MRF173CQ
7
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
Opportunity/Affirmative Action Employer.
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;
P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447
JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1,
Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488
Mfax : RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
INTERNET: http://motorola.com/sps
MRF173/D
◊
相关型号：
©2020 ICPDF网 联系我们和版权申明