MRF172 [ASI]
VHF POWER MOSFET N-Channel Enhancement Mode; 甚高频功率MOSFET N沟道增强模式
| 型号： | MRF172 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | VHF POWER MOSFET N-Channel Enhancement Mode |
| 文件： | 总1页 (文件大小：18K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MRF172
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The ASI MRF172 is Designed for
wideband large-signal output and
driver stages in the 2.0-200 MHz
frequency range.
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
A
Ø.125 NOM.
FULL R
FEATURES:
S
D
S
J
• PG = 10 dB Min. at 150 MHz
• 30:1 Load VSWR Capability
• Omnigold™ Metalization System
.125
G
C
E
D
F
I
H
G
MAXIMUM RATINGS
9.0 A
65 V
ID
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
VDSS
VGS
PDISS
TJ
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
A
B
C
D
E
F
G
H
I
±40 V
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
220 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.8 °C/W
.004 / 0.10
.085 / 2.16
.160 / 4.06
TSTG
θJC
.240 / 6.10
J
ORDER CODE: ASI10830
NONE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BVDSS
IDS = 50 mA
VDS = 28 V
VDS = 0 V
65
V
mA
µA
IDSS
IGSS
VGS(th)
gfs
VGS = 0 V
5.0
1.0
5.0
VGS = 20 V
VDS = 10 V
VDS = 10 V
ID = 50 mA
ID = 2.5 A
1.0
1.5
V
mho
200
110
20
Ciss
Coss
Crss
VDS = 28 V
VDD = 28 V
VGS = 0 V
f = 1.0 MHz
pF
PG
ηD
IDQ = 50 mA
Pout = 80 W
f = 150 MHz
10
50
dB
%
ψ
VSWR = 30:1 AT ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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