MRF173 [TE]
N-CHANNEL BROADBAND RF POWER MOSFET; N沟道宽带射频功率MOSFET
| 型号： | MRF173 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | N-CHANNEL BROADBAND RF POWER MOSFET |
| 文件： | 总8页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
by MRF173/D
The RF MOSFET Line
M
R
F
1
7
3
R
F
P
o
w
e
r
F
i
e
l
d
E
f
f
e
c
t
T
r
a
n
s
i
s
t
o
r
N–Channel Enhancement Mode MOSFET
80 W, 28 V, 175 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
Designed for broadband commercial and military applications up to 200 MHz
frequency range. The high–power, high–gain and broadband performance of
this device make possible solid state transmitters for FM broadcast or TV
channel frequency bands.
•
Guaranteed Performance at 150 MHz, 28 V:
Output Power = 80 W
Gain = 11 dB (13 dB Typ)
Efficiency = 55% Min. (60% Typ)
D
•
•
•
•
•
Low Thermal Resistance
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability
Low Noise Figure — 1.5 dB Typ at 2.0 A, 150 MHz
Excellent Thermal Stability; Suited for Class A Operation
G
CASE 211–11, STYLE 2
S
MAXIMUM RATINGS
Rating
Symbol
Value
65
Unit
Vdc
Vdc
Vdc
Adc
Drain–Source Voltage
Drain–Gate Voltage
V
DSS
V
DGO
65
Gate–Source Voltage
Drain Current — Continuous
V
GS
±40
9.0
I
D
Total Device Dissipation @ T = 25°C
P
D
220
Watts
C
Derate above 25°C
1.26
W/°C
Storage Temperature Range
Operating Temperature Range
T
–65 to +150
200
°C
°C
stg
T
J
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
0.8
°C/W
θ
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (V = 0 V, V = 0 V)
I
D
= 50 mA
V
(BR)DSS
65
—
—
—
—
—
—
V
DS
GS
Zero Gate Voltage Drain Current (V = 28 V, V = 0 V)
I
2.0
1.0
mA
µA
DS
GS
DSS
GSS
Gate–Source Leakage Current (V = 40 V, V = 0 V)
I
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage (V = 10 V, I = 50 mA)
V
1.0
—
3.0
—
6.0
1.4
—
V
V
DS
D
GS(th)
Drain–Source On–Voltage (V
, V = 10 V, I = 3.0 A)
DS(on) GS
V
DS(on)
D
Forward Transconductance (V = 10 V, I = 2.0 A)
g
fs
1.8
2.2
mhos
DS
D
(continued)
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 10
1
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Input Capacitance (V = 28 V, V = 0 V, f = 1.0 MHz)
C
—
—
—
110
105
10
—
—
—
pF
pF
pF
DS
GS
iss
Output Capacitance (V = 28 V, V = 0 V, f = 1.0 MHz)
C
oss
DS
GS
Reverse Transfer Capacitance (V = 28 V, V = 0 V, f = 1.0 MHz)
C
rss
DS
GS
FUNCTIONAL CHARACTERISTICS
Noise Figure (V = 28 V, f = 150 MHz, I = 50 mA)
NF
—
11
1.5
13
—
—
dB
dB
DD
DQ
Common Source Power Gain
G
ps
(V = 28 V, P = 80 W, f = 150 MHz, I = 50 mA)
DD
out
DQ
Drain Efficiency (V = 28 V, P = 80 W, f = 150 MHz, I = 50 mA)
η
55
60
—
%
DD
out
DQ
Electrical Ruggedness
ψ
No Degradation in Output Power
(V = 28 V, P = 80 W, f = 150 MHz, I = 50 mA)
DD
out
DQ
Load VSWR 30:1 at all phase angles
Series Equivalent Input Impedance
Z
—
—
2.99–j4.5
2.68–j1.3
—
—
Ohms
Ohms
in
(V = 28 V, P = 80 W, f = 150 MHz, I = 50 mA)
DD
out
DQ
Series Equivalent Output Impedance
Z
out
(V = 28 V, P = 80 W, f = 150 MHz, I = 50 mA)
DD
out
DQ
R F C 1
V
D
=
2 8
V
R2
D
C
1
1
C
1
2
+
V
dc
+
-
+
-
R
1
C
8
C
9
Z
1
C
1
0
C1 3
C1 5
C
1
4
-
R
F
C
2
R
F
D
.
U
.
T
.
O
U
T
P
U
T
L
3
L
4
C
1
6
R
F
R
3
I
N
P
U
T
C
1
L
1
L
2
C
4
C
5
C
6
C
7
C
2
C
3
C1, C15 — 470 pF Unelco
C2, C3, C5 — 9–180 pF, Arco 463
C4, C6 — 15 pF, Unelco
L3 — #14 AWG Hairpin 0.8″ long
L4 — #14 AWG Hairpin 1.1″ long
RFC1 — Ferroxcube VK200–19/4B
C7 — 5–80 pF, Arco 462
C8, C10, C14, C16 — 0.1 µF
C9, C13 — 50 µF, 50 Vdc
RFC2 — 18 Turns #18 AWG Enameled, 0.3″ ID
R1 — 10 kΩ, 10 Turns Bourns
R2 — 1.8 kΩ, 1/4 W
C11, C12 — 680 pF, Feed Through
L1 — #16 AWG, 1–1/4 Turns, 0.3″ ID
L2 — #16 AWG Hairpin 1″ long
R3 — 10 kΩ, 1/2 W
Z1 — 1N5925A Motorola Zener
Figure 1. 150 MHz Test Circuit
REV 10
2
TYPICAL CHARACTERISTICS
1 20
1 00
8 0
6 0
4 0
2 0
0
8 0
7 0
6 0
5 0
4 0
3 0
f
=
1 00 M Hz
15 0 M Hz
f
=
1 00 MH z
1 50 MH z
20 0 M Hz
2
0
0
M
H
z
V
=
D
2 8
V
D
2 0
1 0
0
I
D
=
Q
5 0 m A
V
D
=
D
1 3 . 5
V
I
D
=
Q
5 0 m A
0
2 . 0
4 . 0
6 . 0
8 .0
1 0
1 2
1 4
0
1
2
3
4
5
6
7
8
9
1 0
P , I NP UT P OWE R ( WATT S)
in
P , I NP UT P O WE R (WATTS )
i n
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Input Power
1 40
1 20
1 40
1 20
I
f
=
5 0 m A
I
=
D Q
5 0 m A
D
Q
P = 4 . 0
in
W
P = 8 . 0
i n
W
=
1 00 M Hz
f
=
1 50 MH z
1 00
8 0
1 00
8 0
3 .0
2 .0
W
W
6 .0
4 .0
W
W
6
0
6 0
1 .0
W
2 .0
W
4 0
2 0
0
4 0
2 0
0
1 0
1 2
1 4
16
18
20
2
2
2
4
2
6
2
8
3
0
1
0
1
2
1
4
1
6
1
8
2
0
2
2
2
4
2
6
2
8
3
0
V
D
,
S
U
P
P
L
Y
V
O
L
T
A
G
E
(
V
O
L
T
S
)
V
D
,
S
U
P
P
L
Y
V
O
L
T
A
G
E
(
V
O
L
T
S
)
D
D
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
2
2
1
4
0
2 0
1 8
I
f
=
Q
5
0
m
A
1
2
0
P
V
=
=
8 0
2 8
W
V
D
o
u
t
P = 1 4
i n
W
=
2 00 M Hz
D
D
1 6
I
D Q
=
5
0
m
A
1 00
8 0
1 0
W
1 4
1 2
6 .0
4 .0
W
6 0
1
0
W
8 . 0
6 . 0
4 . 0
2 . 0
4 0
2 0
0
2 0
4 0
6 0
8 0
1 00 1 20 1 40 1 60 1 80 2 0 0 2 2 0
f , FRE Q UE NCY (M Hz)
1 0
1 2
1
4
16
18
20
22
24
26
2 8
3 0
V
D
, S UPP LY V OLTA GE ( VO LT S)
D
Figure 7. Power Gain versus Frequency
Figure 6. Output Power versus Supply Voltage
REV 10
3
8 0
7 0
6 0
5 0
4 0
3 0
2 0
1 0
0
6 . 0
5 . 0
4 . 0
3 . 0
2 . 0
1 . 0
0
f
=
1 50 M Hz
= C O NS TA NT
V
V
=
1 0
V
D
S
P
V
I
i
n
=
3 .0
V
=
28
50 m A
3. 0
V
G S (t h)
D
S
=
D
Q
V
=
V
G
S
(
t
h
)
0
1 .0
2 .0
3 .0
4 .0
5 .0
6 .0
- 14 - 12 - 10 - 8. 0 - 6. 0 - 4. 0 - 2. 0
0
G ATE - SO UR C E V OLTA GE ( VO LTS )
2. 0 4 .0 6 . 0
V ,
G S
V
G
,
S
G ATE - S O URCE V O LTA G E (V O LTS )
Figure 8. Output Power versus Gate Voltage
Figure 9. Drain Current versus Gate Voltage
1 .2
1 .1
1 .0
0 .9
0 .8
4 20
3 60
3 00
2 40
1 80
1 20
6 0
1 4 0
C
i ss
V
=
28
V
D
S
1 2 0
1 0 0
8 0
6 0
4 0
2 0
0
V
G
=
0
V
I
D
=
3 . 0
1. 0
A
A
S
F
R
E
Q
=
1
MH z
5 00 mA
C
os s
50 mA
C
r s s
0
0 .7
1
6
20
24
2 8
- 25
0
25
50
T , C ASE TE M PER ATU RE°) ( C
75
10 0
12 5
1 50
1 75
0
4
8
12
V
D
,
S
D
R
A
I
N
-
S
O
U
R
C
E
V
O
L
T
A
G
E
(
V
O
L
T
S
)
C
Figure 10. Gate–Source Voltage versus
Case Temperature
Figure 11. Capacitance versus Drain Voltage
1
0
5. 0
2. 0
1. 0
0. 5
T
= °C25
C
0. 2
0. 1
1. 0
2. 0
4
.
0
6
.
0
1
0
2
0
4 0
6
0
1
0
0
V
D
,
D
R
A
I
N
-
S
O
U
R
C
E
V
O
L
T
A
G
E
(
V
O
L
T
S
)
S
Figure 12. DC Safe Operating Area
REV 10
4
Table 1. Common Source S–Parameters (VDS = 12.5 V, ID = 4 A)
S
11
S
21
S
12
S
22
f
|S
|
φ
–170
–173
–174
–175
–176
–177
–178
–178
–179
–179
–179
–180
–180
180
|S
|
φ
|S
|
φ
|S |
22
φ
–174
–179
–178
180
179
–179
–179
180
179
–180
–179
–180
180
180
179
179
178
178
178
178
176
176
177
176
176
175
174
175
176
175
173
173
174
172
172
172
171
173
170
169
170
170
MHz
11
21
12
30
0.879
0.883
0.885
0.885
0.888
0.888
0.888
0.890
0.888
0.892
0.893
0.894
0.896
0.896
0.898
0.899
0.899
0.902
0.902
0.904
0.907
0.907
0.909
0.911
0.909
0.913
0.914
0.915
0.917
0.916
0.917
0.919
0.919
0.920
0.921
0.923
0.925
0.926
0.927
0.929
0.929
0.930
8.09
6.19
4.94
4.21
3.57
3.06
2.71
2.45
2.28
2.02
1.84
1.73
1.58
1.51
1.38
1.28
1.25
1.15
1.12
1.08
0.97
0.95
0.90
0.85
0.83
0.78
0.74
0.74
0.70
0.69
0.65
0.65
0.62
0.60
0.57
0.56
0.54
0.51
0.51
0.49
0.46
0.45
92
0.014
0.016
0.016
0.017
0.017
0.017
0.018
0.019
0.020
0.021
0.022
0.023
0.024
0.026
0.026
0.028
0.030
0.030
0.032
0.034
0.037
0.037
0.039
0.039
0.042
0.044
0.044
0.047
0.048
0.052
0.055
0.055
0.057
0.059
0.061
0.063
0.065
0.067
0.070
0.071
0.072
0.076
23
0.839
0.839
0.853
0.845
0.849
0.852
0.842
0.858
0.859
0.872
0.870
0.880
0.887
0.863
0.850
0.871
0.890
0.884
0.899
0.893
0.941
0.884
0.896
0.888
0.895
0.893
0.882
0.877
0.909
0.912
0.885
0.898
0.887
0.918
0.929
0.900
0.907
0.902
0.942
0.926
0.901
0.904
40
87
84
81
77
77
76
72
70
69
67
66
64
61
60
58
57
55
53
51
49
48
49
48
46
45
42
42
41
39
37
38
36
37
35
34
36
34
33
31
32
32
24
28
30
34
37
42
43
46
50
52
55
55
56
60
60
62
63
63
65
65
65
67
68
68
69
69
72
73
71
71
70
72
72
71
71
71
75
73
71
72
73
50
60
70
80
90
100
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250
260
270
280
290
300
310
320
330
340
350
360
370
380
390
400
410
420
430
440
179
179
179
179
179
178
178
178
178
177
177
177
177
176
176
176
176
176
175
175
175
175
175
174
174
174
173
173
REV 10
5
Table 1. Common Source S–Parameters (VDS = 12.5 V, ID = 4 A) (continued)
S
11
S
21
S
12
S
22
f
|S
|
φ
173
172
172
172
171
171
|S
|
φ
|S
|
φ
|S |
22
φ
170
167
168
168
167
167
MHz
11
21
12
450
460
470
480
490
500
0.932
0.932
0.933
0.931
0.931
0.931
0.45
0.44
0.42
0.42
0.41
0.41
29
0.079
0.082
0.081
0.086
0.089
0.092
75
0.924
0.938
0.908
0.933
0.926
0.936
30
30
29
28
27
71
73
72
72
71
Table 2. Common Source S–Parameters (VDS = 28 V, ID = 4 A)
S
11
S
21
S
12
S
22
f
|S
|
φ
–163
–167
–170
–171
–172
–174
–174
–175
–175
–176
–176
–177
–177
–177
–178
–178
–179
–179
–179
–179
–180
–180
180
|S
|
φ
|S
|
φ
|S |
22
φ
–169
–174
–174
–175
–175
–174
–174
–176
–177
–175
–172
–175
–176
–176
–176
–175
–176
–177
–178
–178
–178
–178
–178
–180
179
MHz
11
21
12
30
0.840
0.849
0.853
0.854
0.859
0.859
0.861
0.866
0.865
0.871
0.875
0.877
0.883
0.884
0.886
0.890
0.891
0.896
0.898
0.901
0.905
0.906
0.909
0.913
0.912
0.916
0.918
0.919
0.922
0.922
0.924
0.926
0.926
11.48
8.80
6.99
5.92
5.00
4.29
3.77
3.39
3.12
2.75
2.49
2.31
2.10
1.99
1.82
1.66
1.62
1.47
1.41
1.36
1.22
1.19
1.11
1.03
0.10
0.93
0.88
0.87
0.83
0.80
0.75
0.74
0.71
92
0.016
0.017
0.017
0.017
0.018
0.018
0.019
0.018
0.018
0.019
0.021
0.023
0.023
0.023
0.023
0.025
0.027
0.030
0.031
0.032
0.033
0.034
0.037
0.038
0.041
0.042
0.041
0.044
0.046
0.051
0.054
0.053
0.054
20
0.718
0.713
0.748
0.746
0.746
0.741
0.735
0.768
0.782
0.794
0.783
0.776
0.806
0.807
0.806
0.820
0.815
0.819
0.842
0.855
0.906
0.845
0.831
0.837
0.859
0.876
0.865
0.837
0.863
0.879
0.878
0.897
0.879
40
86
82
79
74
73
71
67
64
63
60
59
56
53
51
49
48
46
43
41
38
38
39
37
35
34
31
31
31
27
26
27
24
22
24
23
25
30
38
40
41
42
45
51
55
58
61
59
60
63
67
70
70
67
68
70
72
74
73
74
74
73
74
74
77
50
60
70
80
90
100
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250
260
270
280
290
300
310
320
330
340
350
180
179
179
178
179
179
178
–180
180
178
178
177
177
176
177
177
177
179
REV 10
6
Table 2. Common Source S–Parameters (VDS = 28 V, ID = 4 A) (continued)
S
11
S
21
S
12
S
22
f
|S
|
φ
177
177
176
176
176
175
175
174
174
174
173
173
173
172
172
|S
|
φ
|S
|
φ
|S |
22
φ
177
175
174
174
177
175
173
173
172
172
171
172
171
169
168
MHz
11
21
12
360
370
380
390
400
410
420
430
440
450
460
470
480
490
500
0.927
0.929
0.931
0.934
0.934
0.936
0.938
0.938
0.939
0.941
0.941
0.942
0.940
0.940
0.940
0.68
0.64
0.62
0.60
0.57
0.56
0.53
0.51
0.49
0.48
0.47
0.45
0.44
0.43
0.42
26
0.056
0.058
0.062
0.064
0.065
0.068
0.070
0.072
0.075
0.080
0.082
0.080
0.083
0.088
0.092
75
0.888
0.893
0.885
0.903
0.898
0.931
0.906
0.885
0.895
0.923
0.940
0.904
0.910
0.906
0.927
24
23
25
22
21
20
21
21
19
19
18
18
18
17
73
72
74
78
77
74
73
75
78
75
75
74
72
72
DESIGN CONSIDERATIONS
MRF173 was characterized at IDQ = 50 mA, which is the
suggested minimum value of IDQ. For special applications
such as linear amplification, IDQ may have to be selected to
optimize the critical parameters.
The gate is a dc open circuit and draws no current. There-
fore, the gate bias circuit may generally be just a simple re-
sistive divider network. Some special applications may
require a more elaborate bias system.
The MRF173 is a RF MOSFET power N–channel en-
hancement mode field–effect transistor (FET) designed for
VHF power amplifier applications. M/A-COM RF MOSFETs
feature a vertical structure with a planar design, thus avoid-
ing the processing difficulties associated with V–groove pow-
er FETs.
M/A-COM Application Note AN211A, FETs in Theory and
Practice, is suggested reading for those not familiar with the
construction and characteristics of FETs.
GAIN CONTROL
Power output of the MRF173 may be controlled from its
rated value down to zero (negative gain) by varying the dc
gate voltage. This feature facilitates the design of manual gain
control, AGC/ALC and modulation systems. (see Figure 8.)
The major advantages of RF power FETs include high
gain, low noise, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mis-
matched loads without suffering damage. Power output can
be varied over a wide range with a low power dc control sig-
nal, thus facilitating manual gain control, ALC and modula-
tion.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar VHF transistors are suitable for MRF173. See M/A-COM
Application Note AN721, Impedance Matching Networks
Applied to RF Power Transistors. The higher input imped-
ance of RF MOSFETs helps ease the task of broadband net-
work design. Both small–signal scattering parameters and
large–signal impedances are provided. While the s–parame-
ters will not produce an exact design solution for high power
operation, they do yield a good first approximation. This is an
additional advantage of RF MOS power FETs.
DC BIAS
The MRF173 is an enhancement mode FET and, there-
fore, does not conduct when drain voltage is applied.
Drain current flows when a positive voltage is applied to
the gate. See Figure 9 for a typical plot of drain current
versus gate voltage. RF power FETs require forward bias
for optimum performance. The value of quiescent drain
current (IDQ) is not critical for many applications. The
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PACKAGE DIMENSIONS
A
U
N O TE S :
1. D I MEN S I ON I N G A N D TO LE R AN C I N G P ER AN S I
Y 14. 5M, 198 2.
M
2. C O N TR O LL IN G D I MEN S I ON : I N CH .
1
INCHES
DIM MIN MAX
MILLIMETERS
M
Q
MIN
24. 39
11. 82
5. 82
MAX
25. 14
12. 95
6. 98
5. 96
2. 79
4. 52
0. 17
---
4
A
B
C
D
E
H
J
0. 960
0. 465
0. 229
0. 216
0. 084
0. 144
0. 003
0. 435
0. 990
0. 510
0. 275
0. 235
0. 110
0. 178
0. 007
---
R
B
5. 49
2. 14
3. 66
0. 08
2
3
K
M
Q
R
U
11. 05
D
45ꢀ ꢀ ꢀN O M
45ꢀ ꢀ ꢀN O M
_
_
K
0. 115
0. 246
0. 720
0. 130
0. 255
0. 730
2. 93
6. 25
3. 30
6. 47
18. 29
18. 54
J
S TY LE 2:
P IN 1. S OU R C E
2. G AT E
C
H
E
SEATING
PLANE
3. S OU R C E
4. D R AI N
CASE 211–11
ISSUE N
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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