MRF171 [ASI]
N-Channel Enhancement Mode TMOS RF FET; N沟道增强型TMOS RF FET
| 型号： | MRF171 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | N-Channel Enhancement Mode TMOS RF FET |
| 文件： | 总1页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MRF171
TMOS RF FET
N-Channel Enhancement Mode
DESCRIPTION:
The ASI MRF171 is a gold metallized
N-Channel Enhancement mode
PACKAGE STYLE .380 4L FLG
MOSFET, intended for use in 28 VDC
large signal applications to 200 MHz.
.112 x 45°
B
A
Ø.125 NOM.
S
FULL R
D
FEATURES:
J
.125
• PG = 12 dB min at 150 MHz
• Omnigold™ Metalization System
• 2 – 200 MHz operation
S
G
C
E
D
F
I
H
G
MAXIMUM RATINGS
ID
4.5 A
65 V
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
A
B
C
D
E
F
G
H
I
VDSS
VDGR
VGS
PDISS
TJ
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
65 V
± 40 V
.004 / 0.10
.085 / 2.16
.160 / 4.06
115 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.52 °C/W
.240 / 6.10
J
TSTG
θJC
NONE
MINIMUM TYPICAL MAXIMUM UNITS
CHARACTERISTICS TC = 25 °C
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
IDS = 10 mA
VDS = 28 V
VDS = 0 V
ID = 25 mA
ID = 1 A
VGS = 0 V
65
V
mA
µA
V
VGS = 0 V
5.0
1.0
6.0
IGSS
VGS = 20 V
VDS = 10 V
VDS = 10 V
VGS(th)
gfs
1.0
0.7
mho
55
70
14
Ciss
Coss
Crss
V
DS = 28 V
DD = 28 V
VGS = 0 V
f = 1.0 MHz
Pout = 45 W
pF
Gps
η
V
IDQ = 25 mA
12
50
15
60
dB
%
f = 150 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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