MRF166W [TE]
TMOS BROADBAND RF POWER FET; TMOS宽带射频功率场效应管
| 型号： | MRF166W |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | TMOS BROADBAND RF POWER FET |
| 文件： | 总10页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
by MRF166W/D
N–Channel Enhancement–Mode MOSFET
Designed primarily for wideband large–signal output and driver stages to
30 – 500 MHz.
•
•
Push–Pull Configuration Reduces Even Numbered Harmonics
Guaranteed Performance at 500 MHz, 28 Vdc
Output Power = 40 Watts
Gain = 14 dB
40 W, 500 MHz
TMOS BROADBAND
RF POWER FET
Efficiency = 50%
•
Typical Performance at 175 MHz, 28 Vdc
Output Power = 40 Watts
Gain = 17 dB
Efficiency = 60%
•
•
•
•
Excellent Thermal Stability, Ideally Suited for Class A Operation
Facilitates Manual Gain Control, ALC and Modulation Techniques
100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
Low C
rss
— 4.0 pF @ V
= 28 Volts
DS
CASE 412–01, Style 1
1
3
5
FLANGE
4
2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
65
Unit
Vdc
Vdc
Adc
ADC
Drain–Gate Voltage
V
DSS
Drain–Gate Voltage (R
Gate–Source Voltage
= 1.0 MΩ)
V
DGR
65
GS
V
GS
± 20
8.0
Drain Current — Continuous
I
D
Total Device Dissipation @ T = 25°C
P
D
175
1.0
Watts
°C/W
C
Derate above 25°C
Storage Temperature Range
T
–65 to +150
200
°C
°C
stg
Operating Junction Temperature
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
T
J
R
1.0
°C/W
θJC
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS (1)
Symbol
Min
Typ
Max
Unit
Drain–Source Breakdown Voltage
V
Vdc
mA
µA
(BR)DSS
(V
GS
= 0 Vdc, I = 5.0 mA)
65
—
—
—
—
—
—
D
Zero Gate Voltage Drain Current
(V = 28 Vdc, V = 0 Vdc)
I
DSS
GSS
0.5
1.0
DS
Gate–Source Leakage Current
(V = 20 Vdc, V = 0 Vdc)
GS
I
GS
DS
ON CHARACTERISTICS (1)
Gate Threshold Voltage
V
Vdc
mS
GS(th)
(V = 10 Vdc, I = 25 mA)
DS
1.5
0.9
3.0
1.1
4.5
—
D
Forward Transconductance
(V = 10 Vdc, I = 1.5 A)
g
fs
DS
D
DYNAMIC CHARACTERISTICS (1)
Input Capacitance
C
pF
pF
pF
iss
(V
DS
= 28 Vdc, V
= 0 Vdc, f = 1.0 MHz)
—
—
—
28
30
—
—
—
GS
Output Capacitance
(V = 28 Vdc, V
C
oss
= 0 Vdc, f = 1.0 MHz)
DS
GS
Reverse Transfer Capacitance
(V = 28 Vdc, V = 0 Vdc, f = 1.0 MHz)
C
rss
4.0
DS
GS
FUNCTIONAL CHARACTERISTICS (2)
Common Source Power Gain
G
dB
%
ps
(V
DD
= 28 Vdc, P
= 40 W, f = 500 MHz, I
= 40 W, f = 500 MHz, I
= 40 W, f = 500 MHz, I
= 100 mA)
= 100 mA)
= 100 mA)
14
50
16
55
—
—
out
DQ
DQ
DQ
Drain Efficiency
(V = 28 Vdc, P
η
DD
out
Electrical Ruggedness
(V = 28 Vdc, P
Ψ
No Degradation in Output Power
DD
out
Load VSWR = 30:1, All phase angles at frequency of test
Series Equivalent Input Impedance
Z
Ohms
Ohms
in
(V
DD
= 28 Vdc, P
= 40 W, f = 500 MHz, I
= 100 mA)
= 100 mA)
—
—
2.88 –j7.96
6.12 –j9.43
—
—
out
DQ
DQ
Series Equivalent Output Impedance
(V = 28 Vdc, P = 40 W, f = 500 MHz, I
Z
out
DD
out
(1) Each transistor chip measured separately.
(2) Both transistor chips operating in a push–pull amplifier.
REV 3
2
BIAS SUPPLY
+
–
V
DD
= 28 Vdc
R1
C12
C13
C14
R2
C11
R3
L1
B2
B1
RF OUTPUT
RF INPUT
C7
C8
C2
C1
D.U.T.
C5
C6
C3
C4
L2
R4
C9
C10
Inputs Line
70 mils x 2460 mils
Output Lines
70 mils x 2380 mils
C4
C3
490 mils
C5
680 mils
C6
C1, C2, C7, C8
C3, C6
C4
220 pF, 100 mil Chip Capacitor, ATC
0 – 10 pF, Johanson
27 pF, 100 mil Chip Capacitor, ATC
22 pF, 100 mil Chip Capacitor, ATC
0.01 µF Blue Capacitor
C5
C9, C10, C11, C12
C13
C14
L1, L2
B1, B2
R1
470 pF, 100 mil Chip Capacitor, ATC
50 F, 50 V Electrolytic Capacitor
8 Turns #20 AWG, 0.100 mils ID
6″ long, ID = 550 mils, 50 Semi–Rigid Coax
1.0 k 1/2 Watt
R2
10 k 1/2 Watt
R3, R4
45 1/2 Watt
Board Material – Teflon Fiberglass
Dielectric Thickness = 0.30″, ε = 2.55 Copper Clad, 2.0 oz. Copper
r
Figure 1. MRF166W 500 MHz Test Circuit Schematic
REV 3
3
60
55
50
24
20
16
12
8
f = 500 MHz
f = 500 MHz
45
40
35
30
25
20
15
10
V
I
DQ
= 13.5 Vdc
= 100 mA
V
I
DQ
= 28 Vdc
= 100 mA
4
0
DD
DD
5
0
0
0.5
1
1.5
2
2.5
3
0
0.4
0.8
1.2
1.6
2
2.4
2.8
P , INPUT POWER (WATTS)
in
P , INPUT POWER (WATTS)
in
Figure 2. Output Power versus Input Power, 28 Vdc
Figure 3. Output Power versus Input Power, 13.5
Vdc
56
45
40
35
30
25
20
15
10
52
48
44
40
36
32
28
24
20
16
V
I
DQ
= 28 Vdc
= 100 mA
DD
I
= 100 mA
P
= 2 W
DQ
f = 500 MHz
in
P
= 1 W
in
f = 500 MHz
TYPICAL DEVICE SHOWN
= 3.0 V
P
= 0.5 W
in
V
GS(th)
5
0
12
8
12
14
16
18
20
22
24
26
28
–5
–4
–3
–2
–1
0
1
2
3
V , SUPPLY VOLTAGE (VOLTS)
DD
V , GATE–SOURCE VOLTAGE (VOLTS)
DS
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Gate Voltage
100
90
V
= 0 V
GS
f = 1.0 MHz
80
70
C
oss
60
50
40
30
20
10
0
C
iss
C
rss
0
4
8
12
16
20
24
28
V , DRAIN–SOURCE VOLTAGE (VOLTS)
DS
Figure 6. Capacitance versus Voltage
REV 3
4
f = 500 MHz
Z
in
400
Z
*
OL
500
400
Z = 50 Ω
o
175
f = 175 MHz
V
DD
= 28 Vdc, I = 100 mA, P = 40 W
DQ out
f
Z
Z
*
in
OL
Z
* = Conjugate of the optimum load impedance into which the device
OL
MHz
Ohms
3.7 – j 22.4
3.6 – j 10.99
2.88 – j 7.96
Ohms
15.2 – j 16.6
10.3 – j 7.99
6.12 – j 9.43
output operates at a given output power, voltage and frequency.
175
400
500
NOTE: Input and output impedance values given are measured from gate to
gate and drain to drain respectively.
Table 1. Input and Output Impedances
Figure 7. Series Equivalent Input/Output Impedance
REV 3
5
MRF166W–500MHZ M J B
(Scale 1:1)
NOTES: 1) 3 X 5 inch Glass Teflon 32 Mil Board, Copper Both Sides
NOTES: 2) Small Holes are 40 Mils ID and Plated Through
NOTES: 3) Large Holes are 140 Mils ID and Plated Through
Figure 8. MRF166W Circuit Board Photomaster
Figure 9. MRF166W Test Fixture
REV 3
6
Table 1. Common Source S–Parameters (V
= 24 V, I = 230 mA)
D
DS
S
11
S
21
S
12
S
22
f
MHz
|S
|
φ
|S
|
φ
128
113
107
100
100
95
92
90
87
84
83
81
78
76
76
74
73
70
69
68
65
64
63
63
61
61
58
57
57
55
54
54
52
51
50
48
48
47
46
44
44
43
|S
|
φ
|S
|
φ
11
21
12
22
30
0.554
0.775
0.758
0.711
0.751
0.742
0.724
0.730
0.735
0.732
0.734
0.740
0.747
0.748
0.741
0.746
0.753
0.756
0.755
0.759
0.767
0.769
0.766
0.767
0.773
0.777
0.777
0.782
0.788
0.794
0.796
0.795
0.799
0.804
0.805
0.807
0.812
0.818
0.821
0.821
0.822
0.826
–85
20.30
20.00
17.50
14.60
12.70
11.30
10.00
8.97
8.29
7.53
7.01
6.57
6.01
5.66
5.22
4.94
4.67
4.51
4.15
3.91
3.75
3.56
3.41
3.26
3.07
3.03
2.89
2.80
2.66
2.54
2.47
2.38
2.27
2.17
2.15
2.06
2.00
1.91
1.86
1.83
1.74
1.67
0.044
0.040
0.041
0.050
0.042
0.043
0.042
0.042
0.043
0.042
0.042
0.043
0.042
0.041
0.040
0.041
0.041
0.040
0.039
0.039
0.039
0.038
0.037
0.035
0.035
0.035
0.034
0.034
0.034
0.033
0.032
0.031
0.030
0.030
0.030
0.029
0.028
0.027
0.029
0.028
0.026
0.025
28
0.628
0.632
0.652
0.570
0.666
0.666
0.657
0.663
0.683
0.666
0.688
0.701
0.688
0.715
0.690
0.719
0.725
0.729
0.727
0.724
0.751
0.733
0.726
0.725
0.725
0.753
0.732
0.744
0.764
0.760
0.787
0.753
0.772
0.782
0.796
0.782
0.796
0.784
0.830
0.823
0.791
0.788
–121
–123
–135
–135
–145
–149
–151
–154
–156
–158
–159
–160
–162
–162
–161
–164
–165
–166
–165
–166
–169
–167
–167
–167
–167
–167
–169
–169
–169
–167
–169
–170
–168
–169
–169
–170
–170
–168
–170
–171
–170
–170
40
–113
–124
–132
–139
–143
–146
–149
–151
–153
–155
–156
–157
–159
–160
–160
–161
–162
–162
–163
–163
–164
–164
–165
–165
–165
–166
–166
–166
–167
–167
–168
–168
–168
–168
–169
–169
–170
–170
–170
–171
–171
26
20
50
60
20
70
11
80
9
90
8
100
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250
260
270
280
290
300
310
320
330
340
350
360
370
380
390
400
410
420
430
440
6
3
2
1
0
–2
–4
–4
–4
–6
–7
–8
–8
–10
–12
–12
–10
–10
–11
–13
–11
–12
–12
–13
–13
–11
–11
–11
–12
–12
–10
–11
–11
–9
–7
REV 3
7
Table 1. Common Source S–Parameters (V
= 24 V, I = 230 mA) (continued)
D
DS
S
11
S
21
S
12
S
22
f
MHz
|S
|
φ
–171
–172
–172
–173
–173
–174
–176
–179
179
|S
|
φ
|S
|
φ
|S
|
φ
–170
–174
–173
–172
–171
–172
–176
–177
178
11
21
12
22
450
460
470
480
490
500
600
700
800
900
1000
0.830
0.831
0.832
0.835
0.835
0.823
0.874
0.910
0.932
0.966
0.975
1.68
1.64
1.54
1.50
1.43
1.43
1.12
0.86
0.74
0.63
0.54
42
0.025
0.026
0.025
0.024
0.024
0.025
0.003
0.013
0.035
0.029
0.042
–7
0.820
0.843
0.827
0.836
0.835
0.849
0.873
0.867
0.904
0.897
0.953
41
41
39
38
37
29
23
18
12
5
–10
–7
–3
1
3
–171
89
61
68
49
176
179
172
174
Table 2. Common Source S–Parameters (V
= 28 V, I = 250 mA)
D
DS
S
11
S
21
S
12
S
22
f
MHz
|S
|
φ
|S
|
φ
128
114
108
101
100
95
|S
|
φ
|S
|
φ
11
21
12
22
30
0.601
0.783
0.764
0.727
0.759
0.751
0.732
0.737
0.741
0.738
0.740
0.747
0.754
0.757
0.749
0.753
0.759
0.761
0.759
0.762
0.771
0.775
0.774
0.775
0.780
0.782
0.781
0.785
–86
22.20
21.20
18.50
15.50
13.50
12.10
10.70
9.55
8.81
8.01
7.47
7.01
6.43
6.07
5.59
5.28
4.99
4.81
4.44
4.18
4.03
3.83
3.69
3.52
3.29
3.24
3.10
3.01
0.040
0.037
0.038
0.045
0.039
0.040
0.040
0.040
0.040
0.040
0.040
0.040
0.040
0.039
0.038
0.039
0.039
0.038
0.037
0.037
0.037
0.036
0.035
0.034
0.034
0.034
0.032
0.033
29
0.796
0.616
0.637
0.574
0.648
0.649
0.641
0.648
0.670
0.654
0.675
0.684
0.669
0.693
0.670
0.701
0.712
0.719
0.713
0.709
0.733
0.715
0.713
0.715
0.712
0.741
0.722
0.733
–119
–122
–133
–135
–143
–148
–150
–153
–155
–156
–157
–158
–161
–161
–161
–163
–164
–165
–163
–164
–167
–165
–166
–168
–168
–168
–168
–168
40
–112
–122
–131
–138
–142
–146
–149
–150
–153
–154
–156
–157
–159
–159
–160
–161
–161
–162
–163
–164
–164
–165
–165
–165
–165
–166
–166
27
21
21
12
9
50
60
70
80
90
93
8
100
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250
260
270
280
290
300
90
6
88
4
85
3
83
2
82
1
79
–2
–3
–3
–4
–5
–7
–6
–7
–9
–10
–10
–10
–10
–11
–12
–11
77
76
75
73
70
70
69
66
65
64
63
61
61
59
58
REV 3
8
Table 2. Common Source S–Parameters (V
= 28 V, I = 250 mA) (continued)
D
DS
S
11
S
21
S
12
S
22
f
MHz
|S
|
φ
|S
|
φ
|S
|
φ
–12
–12
–13
–14
–12
–12
–12
–13
–13
–11
–12
–13
–12
–11
–10
–13
–11
–10
–10
–10
138
77
|S
|
φ
11
21
12
22
310
320
330
340
350
360
370
380
390
400
410
420
430
440
450
460
470
480
490
500
600
700
800
900
1000
0.792
0.798
0.801
0.800
0.803
0.807
0.808
0.809
0.813
0.820
0.823
0.823
0.824
0.828
0.832
0.833
0.835
0.840
0.844
0.845
0.879
0.912
0.935
0.966
0.974
–167
–167
–168
–168
–169
–169
–169
–169
–170
–170
–170
–171
–171
–172
–172
–172
–172
–172
–173
–173
–176
–179
179
2.87
2.75
2.68
2.58
2.44
2.33
2.30
2.19
2.14
2.06
2.02
1.98
1.89
1.83
1.81
1.75
1.65
1.60
1.55
1.56
1.21
0.92
0.79
0.67
0.57
57
0.032
0.032
0.031
0.030
0.029
0.029
0.029
0.028
0.027
0.026
0.027
0.026
0.025
0.024
0.024
0.025
0.023
0.022
0.022
0.022
0.002
0.017
0.039
0.030
0.043
0.750
0.739
0.760
0.727
0.755
0.772
0.787
0.768
0.775
0.765
0.805
0.794
0.778
0.785
0.812
0.838
0.817
0.818
0.819
0.833
0.870
0.862
0.887
0.892
0.945
–167
–166
–170
–172
–170
–171
–169
–170
–169
–167
–170
–173
–174
–173
–172
–175
–173
–172
–172
–173
–176
–176
179
56
53
53
52
50
50
48
49
47
45
44
44
43
41
41
41
40
38
37
29
23
18
11
5
58
176
69
179
172
49
175
REV 3
9
PACKAGE DIMENSIONS
–A–
U
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Q 2 PL
G
M
M
M
0.51 (0.020)
T A
B
INCHES
DIM MIN MAX
0.965 0.985 24.52 25.01
MILLIMETERS
MIN MAX
1
3
2
A
B
C
D
E
0.245 0.265
0.165 0.185
0.050 0.070
0.070 0.080
0.254 BSC
6.23
4.20
1.27
1.78
6.73
4.69
1.77
2.03
K
–B–
4
5
G
H
J
6.45 BSC
0.095 0.105
0.003 0.006
2.42
0.08
2.66
0.15
K
N
Q
U
0.625 0.675 15.88 17.14
0.495 0.520 12.58 13.20
D 4 PL
M
M
M
0.51 (0.020)
T A
B
0.120 0.140
0.725 BSC
3.05
18.42 BSC
3.55
STYLE 1:
PIN 1. DRAIN
N
E
J
2. DRAIN
3. GATE
4. GATE
C
H
5. SOURCE
SEATING
PLANE
–T–
CASE 412–01
ISSUE O
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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