MRF166W [MOTOROLA]
TMOS BROADBAND RF POWER FET; TMOS宽带射频功率场效应管
| 型号： | MRF166W |
| 厂家： | 
MOTOROLA |
| 描述： | TMOS BROADBAND RF POWER FET |
| 文件： | 总6页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MRF166W/D
SEMICONDUCTOR TECHNICAL DATA
N–Channel Enhancement–Mode MOSFET
Designed primarily for wideband large–signal output and driver stages to
500 MHz.
•
•
Push–Pull Configuration Reduces Even Numbered Harmonics
Typical Performance at 400 MHz, 28 Vdc
Output Power = 40 Watts
Gain = 13 dB
40 W, 500 MHz
TMOS BROADBAND
RF POWER FET
Efficiency = 50%
•
Typical Performance at 175 MHz, 28 Vdc
Output Power = 40 Watts
Gain = 17 dB
Efficiency = 60%
•
•
•
•
•
Excellent Thermal Stability, Ideally Suited for Class A Operation
Facilitates Manual Gain Control, ALC and Modulation Techniques
100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
Low C
— 4.5 pF @ V = 28 Volts
DS
rss
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
CASE 412–01, Style 1
1
3
5
FLANGE
2
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
65
Unit
Vdc
Vdc
Adc
ADC
Drain–Gate Voltage
V
DSS
Drain–Gate Voltage (R
= 1.0 MΩ)
V
DGR
65
GS
Gate–Source Voltage
V
GS
± 40
8.0
Drain Current — Continuous
I
D
Total Device Dissipation @ T = 25°C
P
D
175
1.0
Watts
°C/W
C
Derate above 25°C
Storage Temperature Range
T
–65 to +150
200
°C
°C
stg
Operating Junction Temperature
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
T
J
R
1.0
°C/W
θJC
NOTE: Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
Motorola, Inc. 1994
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS (1)
Symbol
Min
Typ
Max
Unit
Drain–Source Breakdown Voltage
V
Vdc
mA
µA
(BR)DSS
(V
GS
= 0 Vdc, I = 5.0 mA)
65
—
—
—
—
—
—
D
Zero Gate Voltage Drain Current
(V = 28 Vdc, V = 0 Vdc)
I
DSS
1.0
1.0
DS GS
Gate–Source Leakage Current
(V = 40 Vdc, V = 0 Vdc)
I
GSS
GS DS
ON CHARACTERISTICS (1)
Gate Threshold Voltage
V
Vdc
mS
GS(th)
(V = 10 Vdc, I = 25 mA)
DS
1.0
3.0
6.0
—
D
Forward Transconductance
(V = 10 Vdc, I = 1.5 A)
g
fs
600
800
DS
D
DYNAMIC CHARACTERISTICS (1)
Input Capacitance
C
pF
pF
pF
iss
(V
DS
= 28 Vdc, V
= 0 Vdc, f = 1.0 MHz)
—
—
—
30
35
—
—
—
GS
GS
Output Capacitance
(V = 28 Vdc, V
C
oss
= 0 Vdc, f = 1.0 MHz)
DS
Reverse Transfer Capacitance
(V = 28 Vdc, V = 0 Vdc, f = 1.0 MHz)
C
rss
4.5
DS GS
FUNCTIONAL CHARACTERISTICS (2)
Common Source Power Gain
G
dB
%
ps
(V
DD
= 28 Vdc, P
= 40 W, f = 400 MHz, I
= 40 W, f = 400 MHz, I
= 40 W, f = 400 MHz, I
= 100 mA)
= 100 mA)
= 100 mA)
11
45
13
50
—
—
out
DG
DG
DG
Drain Efficiency
(V = 28 Vdc, P
η
DD
out
Electrical Ruggedness
(V = 28 Vdc, P
Ψ
No Degradation in Output Power
DD out
Load VSWR = 30:1, All phase angles at frequency of test
(1) Each transistor chip measured separately.
(2) Both transistor chips operating in a push–pull amplifier.
MRF166W
2
MOTOROLA RF DEVICE DATA
B
R7
RFC1
C16
V
DD 28 V
+
+
–
A
R1 C14
C17
Z8
D1
V
C18
C8
dc
C15
C22
R2
–
RFC2
C10
A
C21
L1
C13
R4
T1
R3
R6
T2
Z7
D.U.T.
C2
Z2
Z1
Z3
Z4
RF INPUT
L3
C5
C23
Z5
Z6
C6
C7
C9
RF OUTPUT
C3
C1
C4
L2
L4
Z10
Z9
R5
C11
A
B
RFC3
C20
C12
C19
L1, L2
L3, L4
0.116
″
0.065
″
0.265
″
0.455
″
C1, C2, C8, C9,
C12, C13, C15
270 pF, Chip Cap
RFC1
RFC2, RFC3
R1
Ferroxcube VK–200–19/4B
10T, ID = 1/4″, 18 AWG
10 kΩ, 10T
9.2 kΩ, 1/2 W
330 Ω, 1.0 W
C3
C4
C5
C6
C7
5.6 pF, Chip Cap
20 pF, Chip Cap
0 – 20 pF, Johanson*
8.2 pF, Chip Cap
15 pF, Chip Cap
R2
R3, R6
R4 R5
R7
520 Ω, 1/4 W
1.5 kΩ, 1/2 W
C10, C11, C14, C19, 0.01 µF
C20, C21, C22
T1, T2
Z1, Z2
Z3, Z4
Z5, Z6
Z7, Z9
Z8, Z10
Balun 2.0″, 50 Ω Semi–Rigid Coax
0.120 x 0.467″
0.120 x 0.55″ *
0.120 x 0.49″
0.120 x 0.85″
C16, C17
C18
680 pF, Feedthru
10 µF, 50 V
C23
0 – 10 pF, Johanson*
D1
IN5343 – Motorola Zener
0.120 x 0.6″ for C6
L1, L2
Hair Pin Inductor #18 AWG,
0.065 W x 0.265 H
* C4, C5 Center of Z3 and Z4
L3, L4
Hair Pin Inductor #18 AWG,
0.116 W x 0.445 H
Board Material – Teflon Fiberglass
Dielectric Thickness = 0.030″, ε = 2.55 Copper Clad, 2.0 oz. Copper
r
Figure 1. MRF166 400 MHz Test Circuit Schematic
MOTOROLA RF DEVICE DATA
MRF166W
3
50
45
45
40
35
30
25
20
15
10
P
= 3.0 W
f = 175 MHz
in
f = 400 MHz
= 100 mA
400 MHz
500 MHz
I
DQ
40
35
30
25
20
15
10
2.0 W
1.0 W
0.5 W
V
I
= 28 Vdc
= 200 mA
DD
DQ
5
0
5
0
0
1
2
3
4
12
14
16
V , DRAIN–SOURCE VOLTAGE (VOLTS)
DS
18
20
22
24
26
28
P
, INPUT POWER (WATTS)
in
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Voltage
40
35
30
25
20
15
10
5
100
90
80
70
60
V
I
= 28 Vdc
= 100 mA
V
= 0 V
DD
DQ
GS
f = 1.0 MHz
TYPICAL DEVICE SHOWN,
= 3.0 V
C
oss
V
GS(th)
50
40
30
20
10
0
f = 400 MHz
C
iss
C
rss
0
–10 – 9 – 8 –7 – 6 – 5 – 4 – 3 – 2 –1
0
1
3
0
4
8
12
16
20
24
28
2
V
, GATE–SOURCE VOLTAGE (VOLTS)
V
, DRAIN–SOURCE VOLTAGE (VOLTS)
GS
DS
Figure 4. Output Power versus Gate Voltage
Figure 5. Capacitance versus Voltage
MRF166W
4
MOTOROLA RF DEVICE DATA
f = 500 MHz
Z
in
400
175
Z
*
OL
f = 500 MHz
400
175
Z
= 50 Ω
o
V
= 28 Vdc, I
DQ
= 100 mA, P
= 40 W
DD
out
f
Z
Z
*
in
Ohms
OL
Ohms
Z
* = Conjugate of the optimum load impedance into which the device
OL
MHz
output operates at a given output power, voltage and frequency.
175
400
500
3.7 – j 22.4
3.6 – j 10.99
2.6 – j 3.2
15.2 – j 16.6
10.3 – j 7.99
10.2 + j 0.5
NOTE: Input and output impedance values given are measured from gate to
gate and drain to drain respectively.
Table 1. Input and Output Impedances
Figure 6. Series Equivalent Input/Output Impedance
MOTOROLA RF DEVICE DATA
MRF166W
5
PACKAGE DIMENSIONS
–A–
U
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Q 2 PL
G
M
M
M
0.51 (0.020)
T
A
B
INCHES
MILLIMETERS
DIM
A
B
C
D
MIN
MAX
0.985
0.265
0.185
0.070
0.080
MIN
24.52
6.23
4.20
1.27
1.78
MAX
25.01
6.73
4.69
1.77
2.03
1
2
0.965
0.245
0.165
0.050
0.070
K
–B–
3
4
5
E
G
H
J
K
N
0.254 BSC
6.45 BSC
0.095
0.003
0.625
0.495
0.120
0.105
0.006
0.675
0.520
0.140
2.42
0.08
2.66
0.15
15.88
12.58
3.05
17.14
13.20
3.55
D 4 PL
M
M
M
0.51 (0.020)
T
A
B
Q
U
0.725 BSC
18.42 BSC
STYLE 1:
N
PIN 1. DRAIN
2. DRAIN
3. GATE
E
J
C
H
4. GATE
5. SOURCE
SEATING
PLANE
–T–
CASE 412–01
ISSUE O
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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MRF166W/D
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