STS3DPFS45 [STMICROELECTRONICS]
P-CHANNEL 45V - 0.080 ohm - 3A SO-8 STripFET⑩ MOSFET PLUS SCHOTTKY RECTIFIER; P沟道45V - 0.080欧姆 - 3A SO- 8 MOSFET STripFET⑩ PLUS肖特基整流器
| 型号： | STS3DPFS45 |
| 厂家： | 
ST |
| 描述： | P-CHANNEL 45V - 0.080 ohm - 3A SO-8 STripFET⑩ MOSFET PLUS SCHOTTKY RECTIFIER |
| 文件： | 总8页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STS3DPFS45
P-CHANNEL 45V - 0.080 Ω - 3A SO-8
STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
V
DSS
R
I
D
MOSFET
DS(on)
45 V
< 0.11 Ω
3 A
I
V
RRM
V
F(MAX)
SCHOTTKY
F(AV)
3 A
45 V
0.51 V
DESCRIPTION
SO-8
This product associates the latest low voltage
StripFETœ in p-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and
cellular phones.
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
45
Unit
V
V
DS
Dain-source Voltage (V = 0)
GS
V
Drain-gate Voltage (R = 20 kΩ)
45
V
DGR
GS
V
Gate- source Voltage
± 16
3
V
GS
I
Drain Current (continuos) at T = 25°C
A
D
C
I
Drain Current (continuos) at T = 100°C
1.9
12
A
D
C
I
(•)
Drain Current (pulsed)
A
DM
P
tot
Total Dissipation at T = 25°C
2
W
C
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Repetitive Peak Reverse Voltage
RMS Forward Curren
Value
Unit
V
V
RRM
45
I
20
A
F(RMS)
o
T =125 C
δ =0.5
L
I
Average Forward Current
3
75
1
A
A
A
F(AV)
tp= 10 ms
Sinusoidal
I
Surge Non Repetitive Forward Current
Repetitive Peak Reverse Current
FSM
tp=2 µs
I
RRM
F=1 kHz
I
Non Repetitive Peak Reverse Current
Critical Rate Of Rise Of Reverse Voltage
tp=100 µs
1
A
RSM
dv/dt
10000
V/µs
(•) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
February 2002
1/8
.
STS3DPFS45
TERMAL DATA
o
o
Rthj-amb
Rthj-amb
C/W
C/W
Thermal Resistance Junction-ambient MOSFET
Thermal Resistance Junction-ambient SCHOTTKY
Storage Temperature Range
62.5
100
-65 to 150
150
MAX
o
T
stg
C
o
T
Maximum Lead Temperature For Soldering Purpose
j
C
(*) Mounted on Fr-4 board (Steady State)
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
I
= 250 µA, V = 0
D
GS
V
45
V
(BR)DSS
Breakdown Voltage
V
= Max Rating
DS
Zero Gate Voltage
1
10
µA
µA
I
DSS
Drain Current (V = 0)
V
DS
= Max Rating T = 125°C
GS
C
Gate-body Leakage
V
GS
= ± 16 V
±100
nA
I
GSS
Current (V = 0)
DS
(1)
ON
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
4
Unit
V
V
GS(th)
V
V
= V
I
D
= 250 µA
Gate Threshold Voltage
2
DS
GS
GS
= 10 V
I
= 1.5 A
Static Drain-source On
Resistance
0.080
0.11
Ω
D
R
I
DS(on)
V
= 10 V
On State Drain Current
3
A
D(on)
GS
SCHOTTCKY STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
o
T = 25 C
J
V = 45 V
V = 45 V
R
0.2
100
mA
mA
R
(*)
I
Reversed Leakage Current
R
o
0.03
T = 125 C
J
o
T = 25 C
J
I = 3 A
I = 3 A
F
0.51
0.46
mA
mA
F
(*)
V
F
Forward Voltage drop
o
0.42
T = 125 C
J
DYNAMIC
Symbol
Parameter
Test Conditions
>I xR I =1.5A
Min.
Typ.
Max.
Unit
(*)
V
V
g
fs
Forward Transconductance
4
S
DS D(on)
DS(on)max D
C
= 25V, f = 1 MHz, V = 0
GS
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
1190
200
56
pF
pF
pF
DS
iss
C
oss
C
rss
2/8
STS3DPFS45
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
= 20 V
Min.
Min.
Min.
Typ.
Max.
Unit
V
R
I
= 1.5 A
= 10 V
Turn-on Delay Time
Rise Time
20
25
ns
ns
t
DD
D
d(on)
= 4.7 Ω
V
GS
t
r
G
(Resistive Load, Figure 3)
Q
V
= 20V I = 3A V =10V
D GS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
24.5
4
5.5
33
nC
nC
nC
g
DD
Q
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
= 20 V
Typ.
Max.
Unit
V
R
I
= 1.5 A
= 10 V
Turn-off Delay Time
Fall Time
100
22
ns
ns
t
t
DD
D
d(off)
= 4.7Ω,
V
GS
t
G
f
(Resistive Load, Figure 3)
V
R
= 32 V
I
D
= 3 A
Turn-off Delay Time
Fall Time
Cross-over Time
95
11
35
ns
ns
ns
d(off)
clamp
t
= 4.7Ω,
V
GS
= 10 V
f
G
t
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I
Source-drain Current
Source-drain Current (pulsed)
3
12
A
A
SD
( )
•
I
SDM
(*)
I
= 3 A
V
= 0
GS
V
Forward On Voltage
2
V
SD
SD
SD
t
rr
I
V
= 3 A
di/dt = 100A/µs
T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
40
85
3.8
ns
nC
A
Q
= 15 V
rr
DD
j
I
(see test circuit, Figure 5)
RRM
(*)
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
•)Pulse width limited by safe operating area.
Thermal Impedance
Safe Operating Area
3/8
STS3DPFS45
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STS3DPFS45
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
.
.
.
5/8
STS3DPFS45
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Fig. 4: Gate Charge test Circuit
Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STS3DPFS45
SO-8 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
e
1.27
3.81
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.14
0.157
0.050
0.023
L
0.015
M
S
8 (max.)
0016023
7/8
STS3DPFS45
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2002 STMicroelectronics - All Rights Reserved
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8/8
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