STS3DPFS30L [STMICROELECTRONICS]
P - CHANNEL 30V - 0.13ohm - 3A S0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER; P - 通道30V - 0.13ohm - 3A S0-8的STripFET MOSFET PLUS肖特基整流器
| 型号： | STS3DPFS30L |
| 厂家： | 
ST |
| 描述： | P - CHANNEL 30V - 0.13ohm - 3A S0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER |
| 文件： | 总5页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STS3DPFS30L
®
P - CHANNEL 30V - 0.13Ω - 3A S0-8
STripFET MOSFET PLUS SCHOTTKY RECTIFIER
PRELIMINARY DATA
MAIN PRODUCT CHARACTERISTICS
VDSS
RDS(on)
ID
MOSFET
30V
IF(AV)
3A
<0.16Ω
VRRM
30V
3A
VF(MAX)
0.51V
SCHOTTKY
SO-8
DESCRIPTION:
This product associates the latest low voltage
StripFET
in p-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and
cellular phones.
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
ID
Parameter
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Value
30
Unit
V
V
V
A
A
A
W
30
± 20
3
o
Drain Current (continuous) at Tc = 25 C
o
ID
Drain Current (continuous) at Tc = 100 C
1.9
12
I
DM(•)
Drain Current (pulsed)
o
Ptot
Total Dissipation at Tc = 25 C
2
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
30
Unit
V
VRRM
Repetitive Peak Reverse Voltage
IF(RMS) RMS Forward Current
20
A
o
IF(AV)
Average Forward Current
TL=125 C
3
A
δ =0.5
IFSM
Surge Non Repetitive Forward Current
tp= 10 ms
Sinusoidal
75
A
IRSM
Non Repetitive Peak Reverse Current
Critical Rate Of Rise Of Reverse Voltage
tp=100 µs
1
A
dv/dt
10000
V/µs
(•) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
1/5
May 2000
STS3DPFS30L
THERMAL DATA
Rthj-amb (*)Thermal Resistance Junction-ambient MOSFET S.O.
Dual Operating
Rthj-amb (*) Thermal Resistance Junction-ambientSCHOTTKY
78
62
100
oC/W
oC/W
oC/W
oC
Tstg
Tj
Storage Temperature Range
Junction Temperature
Maximum
-65 to 150
150
oC
(*) mounted on FR-4 board (steady state)
(Tcase = 25 oC unless otherwise specified)
MOSFET ELECTRICAL CHARACTERISTICS
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Gate-body Leakage VGS = ± 16 V
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ID = 250 µA VGS = 0
30
V
IDSS
IGSS
1
10
µA
µA
Tc = 125 oC
± 1
µA
Current (VDS = 0)
ON ( )
Symbol
VGS(th)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Gate Threshold Voltage VDS = VGS ID = 250 µA
1
2.5
V
RDS(on)
Static Drain-source On VGS = 10V ID = 1.5 A
0.13
0.15
0.16
0.19
Ω
Ω
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
GS = 10 V
VGS = 4.5V ID = 1.5 A
ID(on)
3
A
V
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID =1.5 A
Min.
Typ.
Max.
Unit
gfs ( )
3.5
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
V
DS = 25 V f = 1 MHz VGS = 0
510
170
55
pF
pF
pF
Reverse
Transfer
Capacitance
2/5
STS3DPFS30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V
RG = 4.7 Ω
ID = 1.5 A
VGS = 4.5 V
15
37
ns
ns
(Resistive Load, see fig. 3)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 15 V ID = 3 A VGS = 4.5 V
5.5
1.7
1.8
7.5
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tr
Turn-off Delay Time
Fall Time
VDD = 15 V
RG = 4.7 Ω
ID = 1.5 A
VGS = 4.5 V
15
29
ns
ns
(Resistive Load, see fig. 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Source-drain Current
Test Conditions
Min.
Typ.
Max.
Unit
ISD
3
12
A
A
ISDM(• ) Source-drain
Current
(pulsed)
VSD ( ) Forward On Voltage
ISD = 3 A VGS = 0
2
V
trr
Reverse
Time
Reverse
Charge
Reverse
Current
Recovery ISD = 3 A
VDD = 15V
Recovery (see test circuit, figure 5)
di/dt = 100 A/µs
Tj = 150 C
18
12
ns
o
Qrr
nC
IRRM
Recovery
1.33
Α
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
0.03
0.38
Max.
Unit
o
IR( )
Reversed
Current
Leakage TJ= 25 C
VR=30V
VR=30V
0.2
100
mA
mA
o
TJ= 125 C
o
VF( )
Forward Voltage drop
TJ= 25 C
IF=3A
IF=3A
0.51
0.46
V
V
o
TJ= 125 C
3/5
STS3DPFS30L
SO-8 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
e
1.27
3.81
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.14
0.157
0.050
0.023
L
0.015
M
S
8 (max.)
0016023
4/5
STS3DPFS30L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
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5/5
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