STU419S [SAMHOP]
P-Channel Logic Level EnhancementMode Field E ffect Transistor; P沟道逻辑电平EnhancementMode域E ffect晶体管
| 型号： | STU419S |
| 厂家： | 
SAMHOP MICROELECTRONICS CORP. |
| 描述： | P-Channel Logic Level EnhancementMode Field E ffect Transistor |
| 文件： | 总8页 (文件大小：379K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S TU/D419S
S amHop Microelectronics C orp.
Mar,29, 2007
P -C hannel Logic Level E nhancement Mode Field E ffect Transistor
FE ATUR E S
PR ODUCT S UMMAR Y
S uper high dense cell design for low R DS (ON).
R DS (ON) ( m
)
Max
Ω
VDS S
ID
R ugged and reliable.
9
@ VG S = -10V
S urface Mount P ackage.
E S D P rocteced
-40A
-40V
12 @ VG S = -4.5V
D
D
G
S
G
S TU S E R IE S
TO-252AA(D-P AK)
S TD S E R IE S
TO-251(l-P AK)
S
AB S OL UTE MAXIMUM R ATING S
(T
A
=25 C unles s otherwis e noted)
Unit
V
Limit
-40
P arameter
S ymbol
Drain-S ource Voltage
V
V
DS
G S
20
V
G ate-S ource Voltage
25 C
-40
-32
A
A
a
I
D
Drain C urrent-C ontinuous @ Ta
70 C
-P ulsed b
I
DM
-100
-10
A
A
Drain-S ource Diode Forward C urrent a
I
S
Ta= 25 C
Maximum P ower Dissipation a
Ta=70 C
50
35
P
D
W
C
Operating J unction and S torage
Temperature R ange
-55 to 175
TJ , TS TG
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, J unction-to-C ase
3
C/W
C/W
R
R
J C
J A
50
Thermal R esistance, J unction-to-Ambient
1
S TU/D419S
P-Channel ELECTR ICAL CHAR ACTER ISTICS (T
A
= 25 C unless otherwise noted)
Typ C Max
Parameter
Condition
Min
Unit
S ymbol
5
OFF CHAR ACTE R IS TICS
VGS 0V, ID -250uA
Drain-S ource Breakdown Voltage
=
-40
V
BVDS S
IDS S
=
-1
uA
uA
VDS -32V, VGS 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
=
=
VGS
20V, VDS 0V
=
IGS S
10
=
a
ON CHAR ACTE R IS TICS
-1.0
30
-1.5
-3.0
9
VGS (th)
V
m ohm
m ohm
A
Gate Threshold Voltage
VDS =VGS , ID =-250uA
7
=
=
VGS -10V, ID -14A
VGS =-4.5V, ID= -10A
VDS =-5V, VGS = -10V
Drain-S ource On-S tate R esistance
R DS (ON)
9.5
12
On-S tate Drain Current
ID(ON)
gFS
9
Forward Transconductance
=
=
S
VDS -10V, ID -14A
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance
3550
710
PF
PF
PF
CIS S
COS S
CR S S
VDS =-15V, VGS = 0V
f =1.0MHZ
Output Capacitance
R everse Transfer Capacitance
420
b
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
tD(ON)
ns
ns
ns
40
70
VDD = -15V
ID = -14 A
tr
R ise Time
VGS = -10V
R GE N = 3ohm
tD(OFF)
Turn-Off Delay Time
Fall Time
345
125
87
tf
ns
Total Gate Charge
VDS =-15V, ID =-14A,VGS =-10V
VDS =-15V, ID =-14A,VGS =-4.5V
Qg
nC
nC
42
Qgs
Qgd
Gate-S ource Charge
Gate-Drain Charge
nC
nC
9
VDS =-15V, ID = -14A
VGS =-10V
20
2
S TU/D419S
E LE C TR IC AL C HAR AC TE R IS TIC S (T =25 C unless otherwise noted)
A
Typ Max
P arameter
DR AIN-S OUR C E DIODE C HAR AC TE R IS TIC S
C ondition
Min
Unit
V
S ymbol
a
-1.2
-0.7
Diode Forward Voltage
VS D
VG S = 0V, Is = -10A
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
50
20
15
VGS =-10V
40
V
GS =-4.5V
VGS =-2.5V
30
10
5
20
10
0
-55 C
VGS =-2V
1
Tj=125 C
25 C
2.0
0
0
0.5
1.0
1.5
2.5
3.0
0
0.5
1
2
3
1.5
2.5
-VDS , Drain-to-S ource Voltage (V)
-VGS , Gate-to-S ource Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1.8
24
20
16
1.6
1.4
VGS =-10V
ID=-14A
12
8
VGS =4.5V
VGS =10V
1.2
VGS =-4V
ID=-10A
1.0
0.8
4
0
100
150
1
50
75
5
10
15
20
25
0
125
25
Tj( C)
-ID, Drain Current (A)
Tj, J unction Temperature ( C )
Figure 3. On-R esistance vs. Drain Current
and Gate Voltage
Figure 4. On-R esistance Variation with
Drain Current and Temperature
3
S TU/D419S
1.15
1.10
1.6
VDS =VG S
ID=-250uA
1.4
ID=-250uA
1.2
1.0
0.8
0.6
1.05
1.00
0.95
0.90
0.85
0.4
0.2
6
0
-50
25 50
-25
125 150
75 100
-50 -25
0
25 50 75 100 125 150
Tj, Junction Temperature ( C )
Tj, Junction Temperature ( C )
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. G ate Threshold Variation
with Temperature
30
20.0
125 C
25 C
ID=-14A
125 C
75 C
15.0
10.0
25
20
25 C
5.0
15
10
5
0
75 C
1.0
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
-VGS , Gate-S ource Voltage (V)
-VS D, Body Diode Forward Voltage (V)
Figure 7. On-R esistance vs.
Gate-S ource Voltage
Figure 8. Body Diode Forward Voltage
Variation with S ource C urrent
4
S TU/D419S
4800
10
8
VDS =-15V
ID=-14A
4000
Ciss
3200
2400
1600
6
4
Coss
2
0
800
6
Crss
0
0
5
10
15
20
25
30
37.5
50 62.5 75 87.5 100
0
12.5 25
-VDS , Drain-to S ource Voltage (V)
Qg, Total G ate C harge (nC )
Figure 10. G ate C harge
Figure 9. Capacitance
140
10
6000
t
i
m
i
L
)
N
O
(
R DS
1
0
m
1000
600
s
TD(off)
1
0
0
m
s
Tf
Tr
1
s
1
100
D
C
(on)
TD
0.1
V
G S =-10V
S ingle P ulse
=25 C
VDS=-15V,ID=-14A
VGS=-10V
10
T
A
0.03
3
600
1
6
10
60 100 300
0.1
1
10
30 50
-VDS , Drain-S ource Voltage (V)
R g, G ate R esistance ( )
Ω
Figure 12. Maximum S afe
Operating Area
Figure 11.switching characteristics
2
1
D=0.5
0.2
0.1
DM
P
0.1
0.05
1
t
2
t
0.02
1. R ⋇JA (t)=r (t) * R ⋇JA
2. R ⋇JA=S ee Datasheet
3. TJM-TA = PDM* R ⋇JA (t)
4. Duty Cycle, D=t1/t2
0.01
S INGLE PULS E
0.01
10-5
10-4
10-3
10-2
10-1
1
10
S quare Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
5
S TU/D419S
6
S TU/D419S
5
35
05
85
0.94
4
9
7
3
41
3
95
7
30
3
3
84
5
1
9
9
3
6.00
0
36
BSC
2.29
BSC
1
0.090
82
9.70
398
0.064
33
56
1.425
0.650
0.600
1.625
0.850
REF .
6
L2
REF .
0.024
7
S TU/D419S
TO251 Tube/TO-252 Tape andReel Data
TO-251 Tube
" A"
TO-252 Carrier Tape
UNIT: ȱ
K0
D1
P0
P1
P2
PACKAGE
A0
B0
D0
E
E 1
E 2
T
᭑1.5
+ 0.1
TO-252
6.80
2.50
1.75
0.1
10.3
16.0
0.3
7.5
8.0
4.0
2.0
0.3
᭑2
(16 ȱ+
0㨼.1
0㨼.1
㨼
0㨼.1
㨼
0㨼.15
0㨼.1
0㨼.1
0㨼.15
0㨼.05
-
0
TO-252 Reel
S
UNIT: ȱ
T
N
W
R
M
H
S
G
K
V
TAPE SIZE
REEL SIZE
᭑13.0
17.0
+ 1.5
᭑330
0㨼.5
2.0
᭑97
1㨼.0
2.2
10.6
16 ȱ
᭑ 330
+
-
0.5
0.2
0㨼.5
-
0
8
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