STU420S [SAMHOP]
N-Channel Logic Level E nhancement Mode F ield E ffect Transistor; N沟道逻辑E级nhancement模式F屈服ê ffect晶体管
| 型号： | STU420S |
| 厂家： | 
SAMHOP MICROELECTRONICS CORP. |
| 描述： | N-Channel Logic Level E nhancement Mode F ield E ffect Transistor |
| 文件： | 总9页 (文件大小：939K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S TU/D420S
S amHop Microelectronics C orp.
J uly 05,2006
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
PR ODUCT S UMMAR Y
FE ATUR E S
S uper high dense cell design for low R DS (ON).
R ugged and reliable.
VDS S
ID
R DS (ON) ( m
Ω
)
Max
24 @ VG S = 10V
30 @ VG S = 4.5V
24A
40V
TO-252 and TO-251 P ackage.
D
D
G
S
G
S TU S E R IE S
TO-252AA(D-P AK)
S TD S E R IE S
TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATING S (T =25 C unless otherwise noted)
A
Limit
40
Unit
V
P arameter
S ymbol
Drain-S ource Voltage
V
V
DS
20
G S
V
A
A
A
W
G ate-S ource Voltage
a
I
D
24
75
8
Drain C urrent-C ontinuous @ T
C
=25 C
-P ulsed b
I
DM
Drain-S ource Diode Forward C urrent
@ Tc=25 C
I
S
P
D
50
Maximum P ower Dissipation
Operating and S torage
Temperature R ange
C
-55 to 175
TJ , TS TG
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, J unction-to-C ase
C/W
C/W
R
R
J C
J A
3
50
Thermal R esistance, J unction-to-Ambient
1
S TU/D420S
E LE C T R IC AL C HAR AC T E R IS T IC S (T
C
=25 C unless otherwise noted)
C
Typ Max
P arameter
C ondition
Min
Unit
S ymbol
OFF C HAR AC TE R IS TIC S
5
V
G S 0V, I
=
D 250uA
=
Drain-S ource Breakdown Voltage
40
V
BVDS S
uA
uA
I
I
DS S
G S S
V
V
DS 32V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
1
=
=
G S
20V, VDS 0V
=
10
=
a
ON C HAR AC TE R IS TIC S
V
G S (th)
1
1.9
17
3
V
G ate Threshold Voltage
V
V
V
V
V
DS =VG S , I
= 250uA
D
24
m ohm
m ohm
=
=
G S 10V, I
G S =4.5V, I
DS = 10V, VG S = 10V
D
10A
Drain-S ource On-S tate R esistance
R
DS (ON)
23.5
30
D
= 8A
30
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
16
Forward Transconductance
=
=
10V, I 10A
DS
D
b
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
750
P
P
P
F
F
F
C
IS S
V
DS =15V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
110
65
3
f =1.0MH
Z
R everse Transfer C apacitance
G ate resistance
R g
V
G S =0V, VDS = 0V, f=1.0MH
Z
ohm
b
S WITC HING C HAR AC TE R IS TIC S
Turn-On Delay Time
t
D(ON)
ns
ns
ns
13
V
DD = 15V
= 1 A
G S = 10V
G E N = 3 ohm
I
D
tr
R ise Time
10
37
12
V
R
tD(OFF)
Turn-Off Delay Time
Fall Time
tf
ns
Total G ate C harge
V
V
DS =20V, I
D
=10A,VG S =10V
=10A,VGS =4.5V
nC
nC
Q
g
15
7
DS =20V, I
D
nC
nC
Q
Q
gs
G ate-S ource C harge
G ate-Drain C harge
2.5
4
V
V
DS =20V, I
G S =10V
D
= 10A
gd
2
S TU/D420S
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
C
Typ Max
P arameter
C ondition
Min
Unit
V
S ymbol
a
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
Diode F orward Voltage
0.84
1.3
V
S D
V G S = 0V, Is = 8A
Notes
a.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
b.G uaranteed by design, not subject to production testing.
30
15
VG S =4.5
Tj=125 C
25
12
9
VG S =4V
VG S =10V
20
VG S =8V
25 C
15
VG S =3.5V
6
3
0
10
VG S =3V
5
-55 C
3.5
0
4.2
0
0.7
1.4
2.1
2.8
0.5
1.5
2
3
1
2.5
0
VDS , Drain-to-S ource Voltage (V)
VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
1.75
1.60
1.45
1.30
1.15
1.0
36
30
24
VG S =4.5V
V
G S =10V
=10A
I
D
18
12
VG S =10V
V
G S =4.5V
=8A
6
0
I
D
0.8
0
-25
6
12
18
24
30
0
150
100 125
25
50
75
Tj( C )
ID, Drain C urrent (A)
T j, J unction T emperature ( C )
Figure 3. On-R esistance vs. Drain C urrent
and G ate Voltage
Figure 4. On-R esistance Variation with
Drain C urrent and Temperature
3
S TU/D420S
1.15
1.10
1.2
V
DS =V G S
ID=250uA
1.1
I
D=250uA
1.0
0.9
0.8
0.7
1.05
1.00
0.95
0.90
0.85
0.6
0.5
6
0
-50
25 50
-25
125 150
75 100
-50 -25
0
25 50 75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
54
20.0
ID=10A
45
36
125 C
25 C
10.0
125 C
25 C
27
18
75 C
75 C
9
0
1.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
VG S , G ate- S ource Voltage (V)
V
S D, B ody Diode F orward V oltage (V )
Figure 7. On-R esistance vs.
G ate-S ource Voltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
S TU/D420S
900
10
8
V
DS =20V
=10A
C iss
750
600
I
D
6
450
300
4
2
0
6
150
C oss
C rss
0
0
5
10
15
20
25
30
9
0
3
6
12 15 18
21 24
VDS , Drain-to S ource Voltage (V)
Qg, T otal G ate C harge (nC )
F igure 10. G ate C harge
Figure 9. C apacitance
100
220
80
t
i
m
i
L
)
1
100
60
N
m
O
s
(
R DS
1
TD(on)
TD(off)
0
m
1
s
0
Tr
0
m
Tf
s
1
s
D
C
10
10
V G S =10V
S ingle P ulse
T c=25 C
V DS =15V ,ID=1A
V G S =10V
1
1
0.5
600
1
6
10
60 100 300
0.1
1
10
30 60
R g, G ate R esistance (
Ω
)
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
Operating Area
F igure 11.switching characteristics
5
S TU/D420S
VDD
on
t
toff
d(off)
t
r
t
d(on)
t
R L
f
t
V IN
90%
10%
90%
D
OUT
V
OUT
V
V
VG S
10%
INVE R TE D
R G E N
G
6
90%
50%
50%
S
IN
10%
P ULS E WIDTH
Figure 12. S witching Waveforms
Figure 11. S witching Test C ircuit
2
1
D=0.5
0.2
0.1
DM
P
0.1
0.05
1
t
2
t
0.02
0.01
1. R θJ A (t)=r (t) * R θJ A
2. R θJ A=S ee Datasheet
3. TJ M-TA = P DM* R θJ A (t)
4. Duty C ycle, D=t1/t2
S ING LE P ULS E
10-4
0.01
10-5
10-3
10-2
10-1
1
10
S quare Wave P ulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance C urve
6
S TU/D420S
7
S TU/D420S
5
35
05
85
0.94
4
9
7
3
41
3
95
7
30
3
3
84
5
1
9
9
3
6.00
0
36
BSC
2.29
BSC
1
0.090
82
9.70
398
0.064
33
56
1.425
0.650
0.600
1.625
0.850
REF.
6
L2
REF.
0.024
8
S TU/D420S
TO-252 Tape and Reel Data
TO-252 Carrier Tape
UNIT:㎜
K0
D1
P0
P1
P2
PACKAGE
A0
B0
D0
E
E1
E2
T
ψ1.5
+ 0.1
TO-252
(16 ㎜)
6.80
±0.1
2.50
±0.1
1.75
0.1±
10.3
±0.1
16.0
0.3±
7.5
±0.15
8.0
±0.1
4.0
±0.1
2.0
±0.15
0.3
±0.05
ψ2
-
0
TO-252 Reel
S
UNIT:㎜
T
N
W
R
M
H
S
G
K
V
TAPE SIZE
REEL SIZE
ψ13.0
17.0
+ 1.5
ψ330
± 0.5
2.0
±0.5
ψ97
± 1.0
2.2
10.6
16 ㎜
ψ 330
+
-
0.5
0.2
-
0
9
相关型号：
©2020 ICPDF网 联系我们和版权申明