STU4A60 [WINSEMI]
Bi-Directional Triode Thyristor; 双向晶闸管
| 型号： | STU4A60 |
| 厂家： | 
SHENZHEN WINSEMI MICROELECTRONICS CO., LTD |
| 描述： | Bi-Directional Triode Thyristor |
| 文件： | 总5页 (文件大小：491K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bi-Directional Triode Thyristor
Features
◆
◆
◆
◆
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 4 A )
Low On-State Voltage (1.6V(Typ.) @ ITM
High Commutation dv/dt
)
◆
High Junction temperature(TJ=150℃)
General Description
Sensitive gate triggering Triac is suitable for direct coupling to
TTL, HTL, CMOS and application such as various logic
functions, low power AC switching applications, such as fan
A1
A2
G
speed, small light controllers and home appliance equipment.
TO-251
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
Para
Condition
Ratings Units
V
Repetitive Peak Off-State Voltage
600
V
DRM/VRRM
IT(RMS)
ITSM
TJ = 1118 °C
R.M.S On-State Current
Surge On-State Current
4.0
A
A
50/60Hz, One cycle, Peak value, non-repetitive
18/20
I2t
2
2
1.67
1.5
I t
A s
PGM
PG(AV)
IGM
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
W
W
A
0.1
1.0
VGM
TJ
Peak Gate Voltage
7.0
V
Operating Junction Temperature
Storage Temperature
-40~+150
-40~+150
℃
℃
TSTG
Thermal Characteristics
Symbol
Parameter
Value
Units
℃/W
RθJc
Thermal Resistance Junction to Case(DC)
3
RθJA
Thermal Resistance Junction to Ambient(DC)
75
℃/W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T02-1
STU4A60
Electrical Characteristics (TC=25℃ unless otherwise noted)
Characteristics
Symbol
IDRM/IRRM
VTM
Min Typ. Max Unit
off-state leakage current
TJ=125
℃
-
-
100
1.2
500
1.7
μA
V
(VAK= VDRM/VRRM Single phase, half wave)
Forward “On” voltage (IT=5A, Inst. Measurement)
T2+,G+
T2+,G-
T2-,G-
T2-,G+
T2+,G+
T2+,G-
T2-,G-
T2-,G+
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5
5
Gate trigger current (continuous dc)
(VAK = 6 Vdc, RL = 10 Ω)
IGT
mA
5
10
1.5
1.5
1.5
2
Gate Trigger Voltage (Continuous dc)
(VAK = 6 Vdc, RL = 10 Ω)
)
VGT
V
Gate threshold Voltage
VGD
TJ=125℃
TJ=125℃
0.2
3
-
-
-
-
V
ＶＤ=1/2VDRM
,
Critical Rate of Rise of Off-State Voltage at Commutation
(VD=0.67VDRM ;(dｉ/dｔ)Ｃ=-1A/ms)
Holding Current
(dv/dt)c
V/μs
IH
IL
-
-
2
2
-
mA
mA
latching current
6
2/5
Steady, all for your advance.
STU4A60
3/5
Steady, all for your advance.
STU4A60
4/5
Steady, all for your advance.
STU4A60
TO-251 Package Dimension
Unit: mm
5/5
Steady, all for your advance.
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