STU4A60H [WINSEMI]
Bi-Directional Triode Thyristor; 双向晶闸管
| 型号： | STU4A60H |
| 厂家： | 
SHENZHEN WINSEMI MICROELECTRONICS CO., LTD |
| 描述： | Bi-Directional Triode Thyristor |
| 文件： | 总5页 (文件大小：408K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bi-Directional Triode Thyristor
Features
◆
◆
◆
◆
◆
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 4 A )
Low On-State Voltage (1.6V(Typ.) @ ITM
High Commutation dv/dt
)
High Junction temperature(TJ=150℃)
General Description
Winsemi Triac STF4A60H is designed for full wave AC control applications.
It can be used as an ON/OFF function or for phase control operation.
Typical Application
■ Home Appliances : Washing Machines, Vacuum Cleaners, Rice Cookers,
Micro Wave Ovens, Hair Dryers, other control
applications
■ Industrial Use : SMPS, Copier Machines, Motor Controls, Dimmer, SSR,
Heater Controls, Vending Machines, other control
applications
A1
A2
G
TO-251
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
Para
Condition
Ratings Units
V
Repetitive Peak Off-State Voltage
600
V
DRM/VRRM
IT(RMS)
ITSM
TJ = 1118 °C
R.M.S On-State Current
Surge On-State Current
4.0
A
A
50/60Hz, One cycle, Peak value, non-repetitive
27/30
I2t
2
2
3.7
1.5
I t
A s
PGM
PG(AV)
IGM
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
W
W
A
0.1
1.0
VGM
TJ
Peak Gate Voltage
7.0
V
Operating Junction Temperature
Storage Temperature
-40~+150
-40~+150
℃
℃
TSTG
Thermal Characteristics
Symbol
Parameter
Value
Units
℃/W
RθJc
Thermal Resistance Junction to Case(DC)
3
RθJA
Thermal Resistance Junction to Ambient(DC)
75
℃/W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T02-1
STU4A60H
Electrical Characteristics (TC=25℃ unless otherwise noted)
Characteristics
Symbol
IDRM/IRRM
VTM
Min Typ. Max Unit
off-state leakage current
TJ=50℃
-
-
-
1
mA
V
(VAK= VDRM/VRRM Single phase, half wave)
Forward “On” voltage (IT=4.5A, Inst. Measurement)
1.2
1.7
T2+,G+
T2+,G-
T2-,G-
-
-
-
-
-
-
-
-
5
5
Gate trigger current (continuous dc)
(VAK = 6 Vdc, RL = 10 Ω)
IGT
-
mA
V
-
-
5
T2+,G+
T2+,G-
T2-,G-
1.5
1.5
1.5
-
Gate Trigger Voltage (Continuous dc)
(VAK = 6 Vdc, RL = 10 Ω)
)
VGT
-
-
VGD
Gate threshold Voltage ＶD=1/2VDRM
,
TJ=150℃
0.2
V
Critical Rate of Rise of Off-State Voltage at Commutation
(VD=0.67VDRM ;(di/dt)Ｃ=-1.5A/ms)
Holding Current
(dv/dt)c
TJ=150℃
3
-
-
V/μs
IH
IL
-
-
2
2
-
mA
mA
latching current
6
2/5
Steady, all for your advance.
STU4A60H
3/5
Steady, all for your advance.
STU4A60H
4/5
Steady, all for your advance.
STU4A60H
TO-251 Package Dimension
Unit: mm
5/5
Steady, all for your advance.
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