STU428S [SAMHOP]
N-Channel Logic Level E nhancement Mode F ield E ffect Transistor; N沟道逻辑E级nhancement模式F屈服ê ffect晶体管
| 型号： | STU428S |
| 厂家： | 
SAMHOP MICROELECTRONICS CORP. |
| 描述： | N-Channel Logic Level E nhancement Mode F ield E ffect Transistor |
| 文件： | 总9页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S TU/D428S
S amHop Microelectronics Corp.
Mar.8,2007
N-Channel Logic Level E nhancement Mode Field E ffect Transistor
FE ATUR E S
PR ODUCT S UMMAR Y
S uper high dense cell design for low R DS (ON).
Typ
R DS (ON) ( m Ωı )
VDS S
ID
R ugged and reliable.
S urface Mount Package.
E S D Protected.
8
@
VGS = 10V
40V
50A
10 @ VGS = 4.5V
D
D
G
G
S
S TU S E R IE S
TO-252AA(D-PAK)
S TD S E R IE S
TO-251(l-PAK)
S
ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltag
Symbol
VDS
Limit
40
Unit
V
VGS
V
e
20
50
ID
IDM
IS
A
A
Drain Current-Continuous @TC=25 C
a
-Pulsed
100
20
Drain-Source Diode Forward Current
A
W
PD
@Tc=25 C
50
Maximum Power Dissipation
Operating and Storage
Temperature Range
C
-55 to 175
TJ, TSTG
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
C/W
C/W
R
R
J C
J A
3
50
Thermal Resistance, Junction-to-Ambient
1
S TU/D428S
E LE C TR IC AL C HAR AC TE R IS TIC S (T =25 C unless otherwise noted)
C
Typ C Max
Parameter
Condition
Min
Unit
S ymbol
5
OFF CHAR ACTE R IS TICS
VGS 0V, ID= 250uA
=
Drain-S ource Breakdown Voltage
40
V
BVDS S
IDS S
uA
uA
=
=
VDS 32V, VGS 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
1
VGS 20V, VDS 0V
IGS S
10
=
=
a
ON CHAR ACTE R IS TICS
1.7
1
3
VGS (th)
V
Gate Threshold Voltage
VDS =VGS , ID = 250uA
8
m ohm
m ohm
10
13
=
=
VGS 10V, ID 10A
VGS =4.5V, ID= 6A
VDS = 10V, VGS = 10V
Drain-S ource On-S tate R esistance
R DS (ON)
10
30
On-S tate Drain Current
ID(ON)
gFS
A
S
26
Forward Transconductance
=
=
10V, ID 10A
VDS
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance
1505
220
150
0.3
PF
PF
CIS S
VDS =20V, VGS = 0V
f =1.0MHZ
Output Capacitance
COS S
R everse Transfer Capacitance
Gate resistance
CR S S
PF
R g
VGS =0V, VDS = 0V, f=1.0MHZ
ohm
b
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
tD(ON)
ns
ns
ns
23
VDD = 15V
ID = 1 A
tr
R ise Time
19
85
27
VGS = 10V
R GE N = 6 ohm
tD(OFF)
Turn-Off Delay Time
Fall Time
tf
ns
Total Gate Charge
VDS =15V, ID =10A,VGS =10V
VDS =15V, ID =10A,VGS =4.5V
nC
nC
Qg
28
12.5
nC
nC
Qgs
Qgd
Gate-S ource Charge
Gate-Drain Charge
3
6
VDS =15V, ID = 10A
VGS =10V
2
S TU/D428S
E LE C TR IC AL C HAR AC TE R IS TIC S (T =25 C unless otherwise noted)
C
Typ Max
P arameter
C ondition
Min
Unit
V
S ymbol
a
DR AIN-S OUR C E DIODE C HAR AC TE R IS TIC S
Diode Forward Voltage
VS D
VG S = 0V, Is = 10A
0.95
1.3
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
60
20
15
VGS =4
V
25 C
Tj=1
50
40
30
VGS
=4
.5V
-55 C
GS
V
=
10V
10
5
20
10
0
VGS =3V
V
GS =2.5V
2.5
0
4.8
4.0
2.4
3.2
1.6
0.8
0
0
0.5
1
2
3
1.5
VDS , Drain-to-S ource Voltage (V)
VGS , Gate-to-S ource Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.0
15
1.8
1.6
1.4
1.2
1.0
0
12
9
VGS =4.5V
VGS =10V
VGS =10V
ID=10A
6
VGS =4.5V
ID=6A
3
1
150
0
25
125
50
100
1
75
12
24
36
48
60
Tj( C)
ID, Drain Current (A)
Tj, Junction Temperature ( C )
Figure 3. On-R esistance vs. Drain Current
and Gate Voltage
Figure 4. On-R esistance Variation with
Drain Current and Temperature
3
S TU/D428S
1.15
1.10
1.3
VDS =VG S
ID=250uA
ID=250uA
1.2
1.1
1.05
1.00
1.0
0.9
0.8
0.95
0.90
0.85
0.7
0.6
6
0
-50
25 50
-25
125 150
75 100
-50 -25
0
25 50 75 100 125 150
Tj, J unction Temperature ( C )
Tj, Junction Temperature ( C )
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. G ate Threshold Variation
with Temperature
30
20.0
ID=10 A
25
10.0
5.0
20
75 C
15
125 C
10
75 C
125 C
25 C
5
25 C
1.0
0
0
2
4
6
8
10
0.72
0.96
1.2
0.24
0.48
0
VGS , Gate- S ource Voltage (V)
V
S D, Body Diode Forward Voltage (V)
Figure 7. On-R esistance vs.
Gate-S ource Voltage
Figure 8. Body Diode Forward Voltage
Variation with S ource C urrent
4
S TU/D428S
2400
2000
10
8
VDS =15V
ID=10A
1600
Ciss
6
1200
800
4
2
0
6
400
0
Coss
15
Crss
0
5
10
20
25
30
0
5
10
20 25
30
35 40
15
VDS , Drain-to S ource Voltage (V)
Qg, Total G ate C harge (nC )
Figure 10. G ate C harge
Figure 9. Capacitance
600
100
220
)
100
60
t
i
TD(on)
Tf
1
Tr
m
TD(off)
m
s
i
L
1
)
0
m
N
s
1
O
0
(
0
S
m
D
s
R
10
10
1
s
D
C
VG S =10V
S ingle P ulse
Tc=25 C
VDS =15V,ID=1A
VG S =10V
1
1
0.5
0.1
600
1
6
10
60 100 300
1
10
30 60
R g, G ate R esistance (
)
VDS , Drain-S ource Voltage (V)
ıΩ
Figure 12. Maximum S afe
Operating Area
Figure 11.switching characteristics
5
S TU/D428S
VDD
on
t
toff
d(off)
t
r
t
d(on)
t
R L
f
t
V IN
90%
90%
D
OUT
V
OUT
V
V
VGS
10%
10%
INVE R TE D
RGE N
G
6
90%
50%
50%
S
IN
10%
PULS E WIDTH
Figure 14. S witching Waveforms
Figure 13. S witching Test Circuit
2
1
D=0.5
0.2
0.1
DM
P
0.1
0.05
1
t
2
t
0.02
0.01
1. R J JA (t)=r (t) * R J JA
2. R J JA=S ee Datasheet
3. TJM-TA = PDM* R J JA (t)
4. Duty Cycle, D=t1/t2
S INGLE PULS E
10-4
0.01
10-5
10-3
10-2
10-1
1
10
S quare Wave Pulse Duration (sec)
Figure 15. Normalized Thermal Transient Impedance Curve
6
S TU/D428S
7
S TU/D428S
5
95
7
35
05
85
0.94
4
9
7
3
41
3
30
3
3
84
5
1
9
9
3
6.00
0
36
BSC
2.29
BSC
1
0.090
82
9.70
398
0.064
33
56
1.425
0.650
1.625
0.850
REF .
6
L2
REF .
0.024
0.600
8
S TU/D428S
TO251 Tube/TO-252 Tape andReel Data
TO-251 Tube
" A"
TO-252 Carrier Tape
UNIT: ȱ
K0
D1
P0
P1
P2
PACKAGE
A0
B0
D0
E
E 1
E 2
T
᭑1.5
+ 0.1
TO-252
6.80
2.50
1.75
10.3
16.0
7.5
8.0
4.0
2.0
0.3
᭑2
(16 ȱ+
㨼0.1
㨼0.1
0.1 㨼
㨼0.1
0.3 㨼
㨼0.15
㨼0.1
㨼0.1
㨼0.15
㨼0.05
-
0
TO-252 Reel
S
UNIT: ȱ
T
N
W
R
M
H
S
G
K
V
TAPE SIZE
REEL SIZE
᭑13.0
17.0
+ 1.5
᭑330
㨼 0.5
2.0
᭑97
㨼 1.0
2.2
10.6
16 ȱ
᭑ 330
+
-
0.5
0.2
㨼0.5
-
0
9
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