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STU434S [SAMHOP]

N-Channel Logic Level Enhancement Mode Field Effect Transistor; N沟道逻辑电平增强模式场效应晶体管
STU434S
型号： STU434S
厂家： SAMHOP MICROELECTRONICS CORP.    SAMHOP MICROELECTRONICS CORP.
描述：

N-Channel Logic Level Enhancement Mode Field Effect Transistor
N沟道逻辑电平增强模式场效应晶体管

晶体 晶体管 场效应晶体管
文件： 总8页 (文件大小：234K)
中文：  中文翻译
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Green  
Product  
STU/D434S  
Ver 1.0  
a
S mHop Microelectronics Corp.  
N-Channel Logic Level Enhancement Mode Field Effect Transistor  
FEATURES  
PRODUCT SUMMARY  
Super high dense cell design for low RDS(ON).  
RDS(ON) (mΩ) Max  
VDSS  
ID  
Rugged and reliable.  
9.2 @ VGS=10V  
TO-252 and TO-251 Package.  
50A  
40V  
11.5 @ VGS=4.5V  
G
S
S
STU SERIE  
S
STD SERIE  
-
-
2 2  
TO 5 AA  
)
-
(
A
P K  
2 1 I  
(
)
A
P K  
-
D
TO  
5
°
ABSOLUTE MAXIMUM RATINGS TA=25 C unless otherwise noted  
)
(
Symbol  
VDS  
Parameter  
Units  
Limit  
40  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
20  
50  
°
TC=25 C  
A
a
ID  
Drain Current-Continuous  
°
TC=70 C  
A
40  
b
IDM  
A
147  
91  
-Pulsed  
d
Single Pulse Avalanche Energy  
EAS  
mJ  
°
TC=25 C  
W
W
42  
27  
a
PD  
Maximum Power Dissipation  
°
TC=70 C  
Operating Junction and Storage  
Temperature Range  
-55 to 150  
°C  
TJ, TSTG  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Case a  
°C/W  
°C/W  
R
3
JC  
JA  
a
R
50  
Thermal Resistance, Junction-to-Ambient  
Details are subject to change without notice.  
Nov,14,2008  
www.samhop.com.tw  
1
STU/D434S  
Ver 1.0  
°
ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted  
)
(
Parameter  
Min  
Max  
Symbol  
Conditions  
Typ  
Units  
OFF CHARACTERISTICS  
BVDSS  
IDSS  
Drain-Source Breakdown Voltage  
VGS=0V , ID=250uA  
40  
V
Zero Gate Voltage Drain Current  
Gate-Body Leakage Current  
uA  
nA  
VDS=32V , VGS=0V  
1
VGS= 20V , VDS=0V  
100  
IGSS  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(th)  
VDS=VGS , ID=250uA  
VGS=10V , ID=25A  
VGS=4.5V , ID=20A  
VDS=10V , ID=25A  
1.3  
1.7  
7.6  
8.8  
18  
3
V
9.2 m ohm  
11.5 m ohm  
S
RDS(ON)  
gFS  
Drain-Source On-State Resistance  
Forward Transconductance  
c
DYNAMIC CHARACTERISTICS  
pF  
pF  
pF  
Input Capacitance  
CISS  
1160  
211  
VDS=20V,VGS=0V  
f=1.0MHz  
Output Capacitance  
COSS  
CRSS  
Reverse Transfer Capacitance  
135  
SWITCHING CHARACTERISTICS c  
tD(ON)  
Turn-On Delay Time  
Rise Time  
ns  
ns  
ns  
ns  
17  
24  
59  
11  
VDD=20V  
ID=1A  
t
r
VGS=10V  
RGEN=3.3 ohm  
tD(OFF)  
Turn-Off Delay Time  
Fall Time  
t
f
20  
10  
2.1  
5
VDS=20V,ID=25A,VGS=10V  
VDS=20V,ID=25A,VGS=4.5V  
nC  
nC  
nC  
nC  
Qg  
Total Gate Charge  
Qgs  
Qgd  
Gate-Source Charge  
Gate-Drain Charge  
VDS=20V,ID=25A,  
VGS=10V  
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  
IS  
10  
A
Maximum Continuous Drain-Source Diode Forward Current  
Diode Forward Voltage b  
VSD  
0.84  
1.3  
V
VGS=0V,IS=10A  
Notes  
a.Surface Mounted on FR4 Board,t < 10sec.  
_
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.  
_
c.Guaranteed by design, not subject to production testing.  
°
d.Starting TJ=25 C,L=0.5mH,VDD = 20V.(See Figure13)  
Nov,14,2008  
www.samhop.com.tw  
2
STU/D434S  
Ver 1.0  
100  
60  
48  
36  
24  
VGS =10V  
80  
VGS =4V  
VGS =3.5V  
60  
40  
20  
0
-55 C  
VGS =3V  
Tj=125 C  
VGS =2.5V  
25 C  
3.5  
12  
0
0
0.7  
1.4  
2.1  
2.8  
4.2  
0
0.5  
1
2
3
1.5  
2.5  
VDS, Drain-to-Source Voltage(V)  
VGS, Gate-to-Source Voltage(V)  
Figure 1. Output Characteristics  
Figure 2. Transfer Characteristics  
20  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0
VGS=10V  
ID=25A  
16  
12  
8
VGS=4.5V  
VGS=10V  
VGS=4.5V  
ID=20A  
4
1
1
20  
40  
60  
80  
100  
125  
0
25  
50  
75  
100  
150  
°
Tj( C )  
ID, Drain Current(A)  
°
Tj, Junction Temperature( C )  
Figure 3. On-Resistance vs. Drain Current  
and Gate Voltage  
Figure 4. On-Resistance Variation with Drain  
Current and Temperature  
1.6  
1.40  
ID=250uA  
VDS =VG S  
1.4  
1.30  
ID=250uA  
1.2  
1.0  
0.8  
0.6  
1.20  
1.10  
1.00  
0.90  
0.80  
0.4  
0.2  
0
-50 -25  
0
25 50  
75 100 125 150  
-50  
25 50  
-25  
125 150  
75 100  
°
Tj, Junction Temperature( C )  
°
Tj, Junction Temperature( C )  
Figure 5. Gate Threshold Variation  
with Temperature  
Figure 6. Breakdown Voltage Variation  
with Temperature  
Nov,14,2008  
www.samhop.com.tw  
3
STU/D434S  
Ver 1.0  
30  
60  
ID=25A  
25  
20  
20  
10  
25 C  
125 C  
125 C  
15  
10  
75 C  
25 C  
5
0
1
0
2
4
6
8
10  
0
0.24  
0.48  
0.72  
0.96  
1.20  
VSD, Body Diode Forward Voltage(V)  
VGS, Gate-to-Source Voltage(V)  
Figure 8. Body Diode Forward Voltage  
Variation with Source Current  
Figure 7. On-Resistance vs.  
Gate-Source Voltage  
1800  
10  
VDS=20V  
ID=25A  
1500  
1200  
8
6
Ciss  
900  
600  
4
Coss  
Crss  
2
0
300  
0
0
5
10  
15  
20  
25  
30  
0
3
6
12 18 21 24 27  
9
Qg, Total Gate Charge(nC)  
VDS, Drain-to-Source Voltage(V)  
Figure 9. Capacitance  
Figure 10. Gate Charge  
1000  
100  
10  
500  
100  
1
0
t
i
0
u
TD(off)  
m
s
i
L
)
N
1
m
O
(
s
R DS  
Tr  
TD(on)  
1
0
m
s
D
Tf  
C
10  
1
V
G S =10V  
S ingle P ulse  
=25 C  
VDS=20V,ID=1A  
VGS=10V  
1
T
A
1
3
10  
100  
0.1  
1
10  
40  
100  
VDS, Drain-Source Voltage(V)  
Rg, Gate Resistance(Ω)  
Figure 11. switching characteristics  
Figure 12. Maximum Safe Operating Area  
Nov,14,2008  
www.samhop.com.tw  
4
STU/D434S  
Ver 1.0  
(BR )DSS  
15V  
t
p
DR IVE R  
L
V
DS  
D.U .T  
R
+
G
V
DD  
-
I
A
AS  
20V  
0.01  
t
p
I
AS  
Unclamped Inductive Test Circuit  
Figure 13a.  
Unclamped Inductive Waveforms  
Figure 13b.  
2
1
D=0.5  
0.2  
0.1  
DM  
P
0.1  
0.05  
1
t
2
t
0.02  
0.01  
1. R J JA (t)=r (t) * R J JA  
2. R J JA=S ee Datasheet  
3. TJM-TA = PDM* R J JA (t)  
4. Duty Cycle, D=t1/t2  
S INGLE PULS E  
0.01  
10-5  
10-4  
10-3  
10-2  
Square Wave Pulse Duration(sec)  
10-1  
1
10  
Figure 14. Normalized Thermal Transient Impedance Curve  
Nov,14,2008  
www.samhop.com.tw  
5
STU/D434S  
Ver 1.0  
PACKAGE OUTLINE DIMENSIONS  
TO-251  
Nov,14,2008  
www.samhop.com.tw  
6
STU/D434S  
Ver 1.0  
E
TO-252  
A
b2  
C
L3  
1
D1  
D
E1  
2
H
1
3
DETAIL "A"  
L4  
b1  
e
b
L2  
L
A1  
DETAIL "A"  
L1  
MILLIMETERS  
INCHES  
MAX  
SYMBOLS  
MIN  
MAX  
MIN  
0.086  
0.000  
0.025  
0.026  
0.205  
0.018  
0.235  
0.213  
0.252  
0.193  
0.090  
0.378  
0.052  
0.105  
0.018  
0.035  
0.020  
A
A1  
b
2.184  
0.000  
0.633  
0.666  
5.207  
0.460  
5.969  
5.415  
6.400  
4.902  
2.286  
9.601  
1.313  
2.666  
0.460  
0.889  
0.508  
2.388  
0.127  
0.889  
1.092  
5.461  
0.584  
6.223  
5.515  
6.731  
5.004  
0.094  
0.005  
0.035  
0.043  
0.215  
0.023  
0.245  
0.217  
0.265  
0.197  
b1  
b2  
C
D
D1  
E
E1  
e
BSC  
BSC  
H
10.286  
1.651  
3.174  
0.560  
1.143  
1.016  
0.405  
0.065  
0.125  
0.022  
0.045  
0.040  
L
L1  
L2  
L3  
L4  
°
°
°
°
8
8
0
0
°
°
7
REF.  
1
7
REF.  
Nov,14,2008  
www.samhop.com.tw  
7
STU/D434S  
Ver 1.0  
TO-251 Tube/TO-252 Tape and Reel Data  
TO-251 Tube  
0.4  
7.50  
1.25  
+
540 1.5  
4.5  
2~ӿ3.0  
6.60  
" A"  
19.75  
TO-252 Carrier Tape  
P1  
P2  
D1  
T
FEED DIRECTION  
K0  
A0  
D0  
P0  
UNIT:р  
K0  
D1  
P1  
P2  
PACKAGE  
A0  
B0  
D0  
E
E1  
E2  
P0  
T
ӿ1.5  
+ 0.1  
TO-252  
(16 р*  
6.96  
²0.1  
10.49  
²0.1  
2.79  
²0.1  
16.0  
²0.3  
7.5  
²0.15  
8.0  
²0.1  
4.0  
²0.1  
2.0  
²0.15  
0.3  
²0.05  
1.75  
²0.1  
ӿ2  
-
0
TO-252 Reel  
T
S
G
V
R
H
W
UNIT:р  
T
N
W
R
M
H
S
G
K
V
TAPE SIZE  
REEL SIZE  
ӿ13.0  
17.0  
+ 1.5  
ӿ330  
² 0.5  
2.0  
²0.5  
ӿ97  
² 1.0  
2.2  
10.6  
16 р  
ӿ 330  
+
-
0.5  
0.2  
-
0
Nov,14,2008  
www.samhop.com.tw  
8

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