STU4530NL [SAMHOP]
N-Channel E nhancement Mode Field Effect Transistor; N沟道é nhancement模式场效应晶体管
| 型号： | STU4530NL |
| 厂家： | 
SAMHOP MICROELECTRONICS CORP. |
| 描述： | N-Channel E nhancement Mode Field Effect Transistor |
| 文件： | 总8页 (文件大小：769K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S TU/D4530NL
S amHop Microelectronics C orp.
AP R 28,2005
N-C hannel E nhancement Mode Field E ffect Transistor
PR ODUCT S UMMAR Y
FE ATUR E S
S uper high dense cell design for low R DS (ON).
R ugged and reliable.
VDS S
ID
R DS (ON) ( m
Ω
) Max
9.5 @ VG S = 10V
19 @ VG S = 4.5V
30V
45A
TO251 and TO 252 P ackage.
D
D
G
S
G
S TU S E R IE S
TO-252AA(D-P AK)
S TD S E R IE S
TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATING S (T
A
=25 C unless otherwise noted)
Limit
30
Unit
V
P arameter
S ymbol
Drain-S ource Voltage
V
V
DS
G S
V
G ate-S ource Voltage
20
I
D
45
A
Drain C urrent-C ontinuous @ T
-P ulsed a
C
=25 C
A
I
DM
110
20
A
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation
I
S
P
D
W
C
50
Operating J unction and S torage
Temperature R ange
T
J
, TS TG
-55 to 175
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, J unction-to-C ase
Thermal R esistance, J unction-to-Ambient
C
C
/W
/W
R
J C
J A
3
R
50
1
S TU/D4530NL
E LE C T R IC AL C HAR AC T E R IS T IC S (T
A
25 C unless otherwise noted)
=
TypC Max
P arameter
C ondition
Min
Unit
S ymbol
5
OFF C HAR AC TE R IS TIC S
V
G S 0V, I
=
D 250uA
=
Drain-S ource Breakdown Voltage
30
V
BVDS S
uA
nA
I
I
DS S
G S S
V
V
DS 24V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
1
=
=
G S
20V, VDS 0V
=
100
=
a
ON C HAR AC TE R IS TIC S
V
G S (th)
1
1.7
8
3
V
G ate Threshold Voltage
V
DS =VG S , I
= 250uA
D
m ohm
m ohm
=
=
9.5
19
V
V
V
V
G S 10V, I
D
9A
Drain-S ource On-S tate R esistance
R
DS (ON)
14
G S =4.5V, I
D
= 5A
60
DS = 10V, VG S = 10V
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
15
Forward Transconductance
=
DS
10V, I 9A
=
D
b
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
P
P
P
F
F
F
1443
346
C
IS S
V
DS =15V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
f =1.0MH
Z
R everse Transfer C apacitance
202
S WITC HING C HAR AC TE R IS TIC S b
Turn-On Delay Time
10.7
46
t
D(ON)
ns
ns
V
DD = 15V
= 1A
I
D
R ise Time
tr
V
R
G S = 10V
G E N = 6
Turn-Off Delay Time
Fall Time
tD(OFF)
27.7
10.2
27
ns
ns
nC
ohm
tf
V
V
DS =15V, I
DS =15V, I
D
D
=9A,VG S =10V
=9A,VG S =4.5V
Q
g
Total G ate C harge
13.6
nC
nC
nC
G ate-S ource C harge
G ate-Drain C harge
Q
Q
gs
4.1
7.1
V
V
DS =15V, I
G S =10V
D
=9A
gd
2
S TU/D4530NL
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
A
Typ Max
P arameter
C ondition
Min
Unit
V
S ymbol
a
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
Diode F orward Voltage
0.9
V
S D
V
G S = 0V, Is = 20A
1.3
Notes
a.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
b.G uaranteed by design, not subject to production testing.
20
20
VG S =10,9,8,7,4.5,4V
16
15
10
VG S =3.5V
12
8
-55 C
Tj=125 C
5
0
VG S =3V
4
25 C
0
0
0
0.9
5.4
1.8
3.6
4.5
2.7
0.5
1
2
3
1.5
2.5
VDS , Drain-to-S ource Voltage (V)
VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
2400
1.6
V
G S =10V
=9A
2000
1600
1.4
1.2
1.0
0.8
0.6
0.4
I
D
C iss
1200
800
C oss
400
0
C rss
-55
-25
50
75
125
100
0
25
0
5
10
15
20
25
30
Tj( C )
VDS , Drain-to S ource Voltage (V)
T j, J unction T emperature ( C )
Figure 3. C apacitance
Figure 4. On-R esistance Variation with
Drain C urrent and Temperature
3
S TU/D4530NL
1.15
1.10
1.3
ID=250uA
V
DS =V G S
1.2
I
D=250uA
1.1
1.0
0.9
0.8
1.05
1.00
0.95
0.90
0.85
0.7
0.6
6
0
-50
25 50
-25
125 150
75 100
-50 -25
0
25 50 75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
20.0
24
V
DS =10V
20
10.0
16
12
8
4
0
1.0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
IDS , Drain-S ource C urrent (A)
V S D, B ody Diode F orward V oltage (V )
F igure 7. T ransconductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
400
10
V
I
DS =15V
=9A
t
i
m
i
100
10
8
6
L
D
)
N
1
O
0
(
R DS
m
s
1
0
0
m
s
1
1
s
D
4
C
V
G S =10V
S ingle P ulse
=25 C
1
2
0
T
A
0.1
60
0.1
1
10
12
Qg, T otal G ate C harge (nC )
0
4
8
16 20 24
28 32
V
DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
Operating Area
F igure 9. G ate C harge
4
S TU/D4530NL
VDD
on
t
toff
d(off)
t
r
t
d(on)
t
R L
f
t
V IN
90%
10%
90%
D
OUT
V
OUT
V
V
VG S
10%
INVE R TE D
R G E N
G
6
90%
50%
50%
S
IN
10%
P ULS E WIDTH
Figure 12. S witching Waveforms
Figure 11. S witching Test C ircuit
2
1
D=0.5
0.2
0.1
DM
P
0.1
0.05
1
t
2
t
0.02
0.01
1. R θ J A (t)=r (t) * R θ J A
2. R θ J A=S ee Datasheet
3. TJ M-TA = P DM* R θ J A (t)
4. Duty C ycle, D=t1/t2
S ING LE P ULS E
10-4
0.01
10-5
10-3
10-2
10-1
1
10
S quare Wave P ulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance C urve
5
S TU/D4530NL
6
S TU/D4530NL
5
95
7
35
05
85
0.94
4
9
7
3
41
3
30
3
3
84
5
1
9
9
3
6.00
0
36
BSC
2.29
BSC
1
0.090
82
9.70
398
0.064
33
56
1.425
0.650
0.600
1.625
0.850
REF.
6
L2
REF.
0.024
7
S TU/D4530NL
TO251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
" A"
TO-252 Carrier Tape
UNIT:㎜
K0
D1
P0
P1
P2
PACKAGE
A0
B0
D0
E
E1
E2
T
ψ1.5
+ 0.1
TO-252
(16 ㎜)
6.80
±0.1
2.50
±0.1
1.75
0.1±
10.3
±0.1
16.0
0.3±
7.5
±0.15
8.0
±0.1
4.0
±0.1
2.0
±0.15
0.3
±0.05
ψ2
-
0
TO-252 Reel
S
UNIT:㎜
T
N
W
R
M
H
S
G
K
V
TAPE SIZE
REEL SIZE
ψ13.0
17.0
+ 1.5
ψ330
± 0.5
2.0
±0.5
ψ97
± 1.0
2.2
10.6
16 ㎜
ψ 330
+
-
0.5
0.2
-
0
7
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