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STU4530NLS [SAMHOP]

N-Channel Logic Level E nhancement Mode Field Effect Transistor; N沟道逻辑E级nhancement模式场效应晶体管
STU4530NLS
型号： STU4530NLS
厂家： SAMHOP MICROELECTRONICS CORP.    SAMHOP MICROELECTRONICS CORP.
描述：

N-Channel Logic Level E nhancement Mode Field Effect Transistor
N沟道逻辑E级nhancement模式场效应晶体管

晶体 晶体管 场效应晶体管
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S TU/D4530NLS  
S amHop Microelectronics C orp.  
Dec 28,2005  
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor  
PR ODUCT S UMMAR Y  
FE ATUR E S  
S uper high dense cell design for low R DS (ON).  
R ugged and reliable.  
VDS S  
ID  
R DS (ON) ( m  
Ω
)
Typ  
8
@ VG S = 10V  
35V  
53A  
TO-252 and TO-251 P ackage.  
10 @ VG S = 4.5V  
D
D
G
S
G
S TU S E R IE S  
TO-252AA(D-P AK)  
S TD S E R IE S  
TO-251(l-P AK)  
S
ABS OLUTE MAXIMUM R ATING S (Ta=25 C unless otherwise noted)  
Limit  
40  
Unit  
P arameter  
S ymbol  
Vspike (c)  
Drain-S ource Voltage R ating  
V
V
V
35  
V
V
DS  
G S  
Drain-S ource Voltage  
G ate-S ource Voltage  
20  
I
D
53  
100  
20  
A
A
Drain C urrent-C ontinuous @ T  
C
=25 C  
a
-P ulsed  
I
DM  
Drain-S ource Diode Forward C urrent  
@ Tc=25 C  
I
S
A
W
P
D
50  
Maximum P ower Dissipation  
Operating and S torage  
Temperature R ange  
C
-55 to 175  
TJ , TS TG  
THE R MAL C HAR AC TE R IS TIC S  
Thermal R esistance, J unction-to-C ase  
C/W  
C/W  
R
R
J C  
J A  
3
50  
Thermal R esistance, J unction-to-Ambient  
1
S TU/D4530NLS  
E LE C T R IC AL C HAR AC T E R IS T IC S (T  
C
=25 C unless otherwise noted)  
C
Typ Max  
P arameter  
C ondition  
Min  
Unit  
S ymbol  
5
OFF C HAR AC TE R IS TIC S  
V
G S 0V, I  
=
D 250uA  
=
Drain-S ource Breakdown Voltage  
35  
V
BVDS S  
uA  
nA  
I
I
DS S  
G S S  
V
V
DS 28V, VG S 0V  
Zero G ate Voltage Drain C urrent  
G ate-Body Leakage  
1
=
=
G S  
20V, VDS 0V  
=
100  
=
a
ON C HAR AC TE R IS TIC S  
1.7  
V
G S (th)  
1
3
V
G ate Threshold Voltage  
V
V
V
V
V
DS =VG S , I  
= 250uA  
D
8
m ohm  
m ohm  
10  
12  
=
=
G S 10V, I  
G S =4.5V, I  
DS = 10V, VG S = 10V  
D
10A  
Drain-S ource On-S tate R esistance  
R
DS (ON)  
10  
D
= 5A  
53  
On-S tate Drain C urrent  
I
D(ON)  
A
S
gFS  
26  
Forward Transconductance  
=
=
10V, I 10A  
DS  
D
b
DYNAMIC C HAR AC TE R IS TIC S  
Input C apacitance  
1620  
P
P
P
F
F
F
C
IS S  
V
DS =15V, VG S = 0V  
Output C apacitance  
C
C
OS S  
R S S  
280  
155  
f =1.0MH  
Z
R everse Transfer C apacitance  
G ate resistance  
R g  
V
G S =0V, VDS = 0V, f=1.0MH  
Z
0.3  
ohm  
b
S WITC HING C HAR AC TE R IS TIC S  
Turn-On Delay Time  
t
D(ON)  
ns  
ns  
ns  
20  
V
DD = 15V  
= 1 A  
I
D
tr  
R ise Time  
22  
55  
V
R
G S = 10V  
G E N = 6 ohm  
t
D(OFF)  
Turn-Off Delay Time  
Fall Time  
tf  
ns  
17  
Total G ate C harge  
V
V
DS =15V, I  
D
=10A,VG S =10V  
=10A,VGS =4.5V  
nC  
nC  
Q
g
33.5  
16  
DS =15V, I  
D
nC  
nC  
Q
Q
gs  
G ate-S ource C harge  
G ate-Drain C harge  
3.7  
7.5  
V
V
DS =15V, I  
G S =10V  
D
= 10A  
gd  
2
S TU/D4530NLS  
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)  
C
Typ Max  
P arameter  
C ondition  
Min  
Unit  
V
S ymbol  
a
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S  
Diode F orward Voltage  
0.95  
V
S D  
V
G S = 0V, Is = 20A  
1.3  
Notes  
a.P ulse Test:P ulse Width 300us, Duty C ycle 2%.  
b.G uaranteed by design, not subject to production testing.  
c.G uaranteed when external R g=6 ohm and tf < tf max  
60  
20  
15  
VG S =4V  
Tj=125 C  
50  
VG S =4.5V  
40  
V
G S =10V  
30  
20  
10  
0
10  
5
25 C  
VG S =3V  
-55 C  
V
G S =2.5V  
2.5  
0
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0
0.5  
1
2
3
1.5  
VDS , Drain-to-S ource Voltage (V)  
VG S , G ate-to-S ource Voltage (V)  
Figure 1. Output C haracteristics  
Figure 2. Transfer C haracteristics  
2.0  
15  
1.8  
1.6  
1.4  
1.2  
1.0  
0
12  
9
VG S =4.5V  
VG S =10V  
V
G S =10V  
=10A  
I
D
6
V
G S =4.5V  
=5A  
I
D
3
0
150  
0
25  
125  
50  
100  
0
75  
12  
24  
36  
48  
60  
Tj( C )  
ID, Drain C urrent (A)  
T j, J unction T emperature ( C )  
Figure 3. On-R esistance vs. Drain C urrent  
and G ate Voltage  
Figure 4. On-R esistance Variation with  
Drain C urrent and Temperature  
3
S TU/D4530NLS  
1.15  
1.10  
1.3  
V
DS =V G S  
ID=250uA  
1.2  
I
D=250uA  
1.1  
1.0  
0.9  
0.8  
1.05  
1.00  
0.95  
0.90  
0.85  
0.7  
0.6  
6
0
-50  
25 50  
-25  
125 150  
75 100  
-50 -25  
0
25 50 75 100 125 150  
T j, J unction T emperature ( C )  
T j, J unction T emperature ( C )  
F igure 6. B reakdown V oltage V ariation  
with T emperature  
F igure 5. G ate T hreshold V ariation  
with T emperature  
30  
20.0  
ID=9A  
25  
20  
25 C  
10.0  
75 C  
25 C  
15  
10  
125 C  
75 C  
125 C  
5
0
1.0  
0
2
4
6
8
10  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
VG S , G ate- S ource Voltage (V)  
V
S D, B ody Diode F orward V oltage (V )  
Figure 7. On-R esistance vs.  
G ate-S ource Voltage  
F igure 8. B ody Diode F orward V oltage  
V ariation with S ource C urrent  
4
S TU/D4530NLS  
2400  
10  
8
V
DS =15V  
2000  
I
D=10A  
C iss  
1600  
6
1200  
800  
4
C oss  
2
0
6
400  
C rss  
0
0
5
10  
15  
20  
25  
30  
0
5
10  
20 25  
30  
35 40  
15  
VDS , Drain-to S ource Voltage (V)  
Qg, T otal G ate C harge (nC )  
F igure 10. G ate C harge  
Figure 9. C apacitance  
600  
100  
220  
TD(off)  
100  
60  
t
i
TD(on)  
1
Tr  
m
Tf  
m
s
i
L
1
)
0
m
N
s
1
O
0
(
0
S
m
D
s
R
10  
10  
1
s
D
C
V G S =10V  
S ingle P ulse  
T c=25 C  
V DS =15V ,ID=1A  
V G S =10V  
1
1
0.5  
600  
1
6
10  
60 100 300  
0.1  
1
10  
30 60  
R g, G ate R esistance (  
Ω
)
V DS , Drain-S ource V oltage (V )  
F igure 12. Maximum S afe  
Operating Area  
F igure 11.switching characteristics  
5
S TU/D4530NLS  
VDD  
on  
t
toff  
d(off)  
t
r
t
d(on)  
t
R L  
f
t
V IN  
90%  
10%  
90%  
D
OUT  
V
OUT  
V
V
VG S  
10%  
INVE R TE D  
R G E N  
G
6
90%  
50%  
50%  
S
IN  
10%  
P ULS E WIDTH  
Figure 14. S witching Waveforms  
Figure 13. S witching Test C ircuit  
2
1
D=0.5  
0.2  
0.1  
DM  
P
0.1  
0.05  
1
t
2
t
0.02  
0.01  
1. R θ J A (t)=r (t) * R θ J A  
2. R θ J A=S ee Datasheet  
3. TJ M-TA = P DM* R θ J A (t)  
4. Duty C ycle, D=t1/t2  
S ING LE P ULS E  
10-4  
0.01  
10-5  
10-3  
10-2  
10-1  
1
10  
S quare Wave P ulse Duration (sec)  
Figure 15. Normalized Thermal Transient Impedance C urve  
6
S TU/D4530NLS  
7
S TU/D4530NLS  
5
95  
7
35  
05  
85  
0.94  
4
9
7
3
41  
3
30  
3
3
84  
5
1
9
9
3
6.00  
0
36  
BSC  
2.29  
BSC  
1
0.090  
82  
9.70  
398  
0.064  
33  
56  
1.425  
0.650  
0.600  
1.625  
0.850  
REF.  
6
L2  
REF.  
0.024  
8
S TU/D4530NLS  
TO251 Tube/TO-252 Tape and Reel Data  
TO-251 Tube  
" A"  
TO-252 Carrier Tape  
UNIT:㎜  
K0  
D1  
P0  
P1  
P2  
PACKAGE  
A0  
B0  
D0  
E
E1  
E2  
T
ψ1.5  
+ 0.1  
TO-252  
(16 ㎜)  
6.80  
±0.1  
2.50  
±0.1  
1.75  
0.1±  
10.3  
±0.1  
16.0  
0.3±  
7.5  
±0.15  
8.0  
±0.1  
4.0  
±0.1  
2.0  
±0.15  
0.3  
±0.05  
ψ2  
-
0
TO-252 Reel  
S
UNIT:㎜  
T
N
W
R
M
H
S
G
K
V
TAPE SIZE  
REEL SIZE  
ψ13.0  
17.0  
+ 1.5  
ψ330  
± 0.5  
2.0  
±0.5  
ψ97  
± 1.0  
2.2  
10.6  
16 ㎜  
ψ 330  
+
-
0.5  
0.2  
-
0
9

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