STU421S [SAMHOP]
P -Channel Logic Level E nhancement Mode F ield E ffect Transistor; P -Channel逻辑E级nhancement模式F屈服ê ffect晶体管
| 型号： | STU421S |
| 厂家： | 
SAMHOP MICROELECTRONICS CORP. |
| 描述： | P -Channel Logic Level E nhancement Mode F ield E ffect Transistor |
| 文件： | 总8页 (文件大小：498K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S TU/D421S
S amHop Microelectronics C orp.
Aug.20,2006
P -C hannel Logic Level E nhancement Mode Field E ffect Transistor
FE ATUR E S
PR ODUCT S UMMAR Y
R DS (ON) ( m
Ω
) Max
VDS S
ID
S uper high dense cell design for low R DS (ON).
R ugged and reliable.
45 @ VG S = -10V
60 @ VG S = -4.5V
-10A
-40V
TO-252 and TO-251 P ackage.
D
D
G
G
S
S TU S E R IE S
TO-252AA(D-P AK)
S TD S E R IE S
TO-251(l-P AK)
S
AB S OL UTE MAXIMUM R ATING S
(T =25 C unles s otherwis e noted)
A
Unit
V
Limit
P arameter
S ymbol
Drain-S ource Voltage
V
V
DS
G S
-40
20
V
G ate-S ource Voltage
25 C
-10
A
A
a
I
D
Drain C urrent-C ontinuous @ Ta
70 C
-8.3
-P ulsed b
I
DM
-50
-10
A
A
Drain-S ource Diode Forward C urrent a
I
S
Ta= 25 C
Maximum P ower Dissipation a
Ta=70 C
50
35
P
D
W
C
Operating J unction and S torage
Temperature R ange
-55 to 175
TJ , TS TG
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, J unction-to-C ase
C/W
C/W
R
R
J C
J A
3
50
Thermal R esistance, J unction-to-Ambient
S TU/D421S
P-Channel E LE CTR ICAL CHAR ACTE R IS TICS (T
A
= 25 C unles s otherwis e noted)
C
Typ Max
P arameter
C ondition
Min
-40
Unit
S ymbol
5
OFF C HAR AC TE R IS TIC S
V
G S 0V, I
=
D -250uA
=
Drain-S ource Breakdown Voltage
V
BVDS S
uA
nA
I
I
DS S
G S S
V
V
DS -32V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
1
=
=
G S
20V, VDS 0V
=
100
=
b
ON C HAR AC TE R IS TIC S
-3.0
45
V
G S (th)
-1.0
30
-1.7
34
V
G ate Threshold Voltage
V
V
V
V
V
DS =VG S , I
=-250uA
D
m ohm
m ohm
=
=
G S -10V, I
G S =-4.5V, I
DS =-5V, VG S = -10V
D
-10A
Drain-S ource On-S tate R esistance
R
DS (ON)
60
D
= -6A
47
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
11
Forward Transconductance
=
=
DS -10V, I -10A
D
c
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
900
P
P
P
F
F
F
C
IS S
V
DS =-20V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
135
85
f =1.0MH
Z
R everse Transfer C apacitance
G ate resistance
R g
V
G S =0V, VDS = 0V, f=1.0MH
Z
3.5
ohm
c
S WITC HING C HAR AC TE R IS TIC S
Turn-On Delay Time
t
D(ON)
ns
ns
ns
12
15
45
26
17
V
DD = -24V
= -10 A
I
D
tr
R ise Time
V
R
G S = -10V
G E N = 3.3 ohm
t
D(OFF)
Turn-Off Delay Time
Fall Time
tf
ns
Total G ate C harge
VDS =-24V, ID =-10A,VG S =-10V
VDS =-24V, ID =-10A,VG S =-4.5V
nC
nC
Q
g
8
1.8
5
nC
nC
Q
Q
gs
G ate-S ource C harge
G ate-Drain C harge
V
V
DS =-24V, I
G S =-10V
D
= -16A
gd
2
S TU/D421S
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
A
Typ Max
P arameter
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
C ondition
Min
Unit
V
S ymbol
a
Diode F orward Voltage
V
S D
V
G S = 0V, Is = -10A
-0.91 -1.3
Notes
a.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
b.G uaranteed by design, not subject to production testing.
30
20
16
V
G S =-8V
V
G S =-10V
VG S =-4.5V
VG S =-3.5V
-55 C
24
18
12
8
25 C
12
6
VG S =-3V
4
Tj=125 C
0
0
0
0.6
1.8
2.4
3.2
4.0
4.8
0
0.5
1.5
2
2.5
3
1
-VDS , Drain-to-S ource Voltage (V)
VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
120
1.5
1.4
1.3
1.2
1.1
1.0
0.0
V
G S =-4.5V
=-6A
100
80
I
D
VG S =-4.5V
VG S =-10V
60
40
V
G S =-10V
=-10A
I
D
20
1
6
12
18
24
30
0
150
1
25
50
75
100
125
Tj( C )
ID, Drain C urrent (A)
T j, J unction T emperature ( C )
Figure 3. On-R esistance vs. Drain C urrent
and G ate Voltage
Figure 4. On-R esistance Variation with
Drain C urrent and Temperature
3
S TU/D421S
1.27
1.18
1.3
ID=-250uA
V
DS =V G S
=-250uA
1.2
I
D
1.1
1.0
0.9
0.8
1.09
1.00
0.91
0.82
0.73
0.7
0.6
6
0
-50
25 50
-25
125 150
75 100
-50 -25
0
25 50 75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
180
20.0
ID=-10A
150
120
125 C
10.0
5.0
25 C
90
60
125 C
25 C
75 C
75 C
30
0
1.0
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
VG S , G ate-S ource Voltage (V)
V
S D, B ody Diode F orward V oltage (V )
Figure 7. On-R esistance vs.
G ate-S ource Voltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
S TU/D421S
1200
10
8
C iss
V
DS =-24V
1000
I
D=-10A
800
600
400
6
4
C oss
2
0
6
200
C rss
0
0
5
10
15
20
25
30
16
0
3
6
9
12
18 21 24
VDS , Drain-to S ource Voltage (V)
Qg, T otal G ate C harge (nC )
F igure 10. G ate C harge
Figure 9. C apacitance
60
10
600
t
i
m
i
L
Tf
1
)
0
m
N
s
O
(
100
60
R DS
TD(off)
1
Tr
0
0
m
s
TD(on)
1
s
D
1
C
10
0.1
V
G S =-10V
S ingle P ulse
=25 C
V D S = - 2 4 V , I D = - 1 0 A
V G S = - 1 0 V
1
T
A
0.03
600
1
6
10
60 100 300
0.1
1
10
30 50
V
DS , Drain-S ource V oltage (V )
R g, G ate R esistance (
Ω
)
F igure 12. Maximum S afe
Operating Area
F igure 11.switching characteristics
2
1
D=0.5
0.2
0.1
DM
P
0.1
0.05
0.02
1
t
2
t
1. R θJ A (t)=r (t) * R θJ A
2. R θJ A=S ee Datasheet
3. TJ M-TA = P DM* R θJ A (t)
4. Duty C ycle, D=t1/t2
0.01
S ING LE P ULS E
0.01
10-5
10-4
10-3
10-2
10-1
1
10
S quare Wave P ulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance C urve
5
S TU/D421S
6
S TU/D421S
5
35
05
85
0.94
4
9
7
3
41
3
95
7
30
3
3
84
5
1
9
9
3
6.00
0
36
BSC
2.29
BSC
1
0.090
82
9.70
398
0.064
33
56
1.425
0.650
0.600
1.625
0.850
REF.
6
L2
REF.
0.024
7
S TU/D421S
TO251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
" A"
TO-252 Carrier Tape
UNIT:㎜
K0
D1
P0
P1
P2
PACKAGE
A0
B0
D0
E
E1
E2
T
ψ1.5
+ 0.1
TO-252
(16 ㎜)
6.80
±0.1
2.50
±0.1
1.75
0.1±
10.3
±0.1
16.0
0.3±
7.5
±0.15
8.0
±0.1
4.0
±0.1
2.0
±0.15
0.3
±0.05
ψ2
-
0
TO-252 Reel
S
UNIT:㎜
T
N
W
R
M
H
S
G
K
V
TAPE SIZE
REEL SIZE
ψ13.0
17.0
+ 1.5
ψ330
± 0.5
2.0
±0.5
ψ97
± 1.0
2.2
10.6
16 ㎜
ψ 330
+
-
0.5
0.2
-
0
8
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