STU426S [SAMHOP]
N-Channel Logic Level E nhancement Mode F ield E ffect Transistor; N沟道逻辑E级nhancement模式F屈服ê ffect晶体管
| 型号： | STU426S |
| 厂家： | 
SAMHOP MICROELECTRONICS CORP. |
| 描述： | N-Channel Logic Level E nhancement Mode F ield E ffect Transistor |
| 文件： | 总9页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S TU/D426S
S amHop Microelectronics Corp.
ver1.1
Oct,2007
N-Channel Logic Level E nhancement Mode Field E ffect Transistor
PR ODUCT S UMMAR Y
FE ATUR E S
S uper high dense cell design for low R DS (ON).
R ugged and reliable.
Typ
)
VDS S
ID
R DS (ON) ( m
Ω
8
@
VGS = 10V
40V
53A
TO-252 and TO-251 Package.
10 @ VGS = 4.5V
D
D
G
S
G
S TU S E R IE S
TO-252AA(D-PAK)
S TD S E R IE S
TO-251(l-PAK)
S
ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted)
S ymbol
Limit
40
Parameter
Drain-S ource Voltage
Unit
V
V
V
DS
GS
20
Gate-S ource Voltage
V
25 C
Drain Current-Continuous
@ Ta=
53
100
20
I
D
A
A
-Pulseda
IDM
Drain-S ource Diode Forward Current
Avalanche Current c
Avalanche Energy c
IS
A
I
AS
A
20
100
50
E
AS
mJ
P
D
Maximum Power Dissipation
Ta= 25 C
W
C
@
Operating Junction and S torage
Temperature R ange
-55 to 175
TJ, TS TG
THE R MAL CHAR ACTE R IS TICS
R
JC
JA
Thermal R esistance, Junction-to-Case
Thermal R esistance, Junction-to-Ambient
3
C/W
C/W
R
50
1
S TU/D426S
E LE C TR IC AL C HAR AC TE R IS TIC S (T =25 C unless otherwise noted)
C
Typ C Max
Parameter
C ondition
Min
Unit
V
S ymbol
5
OFF CHAR ACTE R IS TICS
V
GS 0V, I
D
= 250uA
= 10mA
=
Drain-S ource Breakdown Voltage
Drain-S ource Breakdown Voltage d
40
45
BVDS S
BVDS S
V
V
GS 0V, ID
=
V
uA
=
=
I
DS S
DS 32V, VGS 0V
Zero Gate Voltage Drain Current
1
V
GS
20V, VDS 0V
=
=
Gate-Body Leakage
I
GS S
100
nA
a
ON CHAR ACTE R IS TICS
1.6
1
3
V
GS (th)
V
G ate T hres hold Voltage
V
V
V
V
V
DS =VGS , I
= 250uA
D
10
12
8
m ohm
m ohm
=
=
GS 10V, I
GS =4.5V, I
DS = 10V, VGS = 10V
D
10A
Drain-S ource On-S tate R es is tance
R
DS (ON)
10
D
= 5A
30
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
26
Forward Transconductance
=
=
10V, I 10A
DS
D
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance
1600
P
P
P
F
F
F
C
IS S
V
DS =15V, VGS = 0V
Output C apacitance
C
C
OS S
R S S
280
150
f =1.0MH
Z
R everse Transfer Capacitance
Gate resistance
R g
V
GS =0V, VDS = 0V, f=1.0MH
Z
0.3
ohm
b
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
t
D(ON)
ns
ns
ns
20
V
DD = 15V
= 1 A
GS = 10V
GE N = 6 ohm
I
D
tr
R ise Time
21
45
16
V
R
tD(OFF)
Turn-Off Delay Time
Fall Time
tf
ns
V
V
DS =15V, I
D
=10A,VGS =10V
=10A,VGS =4.5V
nC
nC
Q
g
32
Total Gate Charge
15
DS =15V, I
D
nC
nC
Q
Q
gs
Gate-S ource Charge
Gate-Drain Charge
3.5
7.3
V
V
DS =15V, I
GS =10V
D
= 10A
gd
2
S TU/D426S
E LE C TR IC AL C HAR AC TE R IS TIC S (T =25 C unless otherwise noted)
C
Typ Max
P arameter
C ondition
Min
Unit
V
S ymbol
a
DR AIN-S OUR C E DIODE C HAR AC TE R IS TIC S
Diode Forward Voltage
VG S = 0V, Is = 20A
0.95
V
S D
1.3
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
<
-
t
c. S artin
C,
=
L
g
=
(
)
15
2
5
T =
J
I
<
AS
A, VDD
25
Ω
,
20
V
(
F
0 5
.
<
)
m
H,
R
G
=
DSS See igure
BR
d.
Pulse Test:Pulse Width -1us, Duty C ycle -1 %.
60
20
15
V
GS =4
V
25 C
Tj=1
50
40
30
VGS
=4
.5V
-55 C
GS
V
=
10V
10
5
20
10
0
VGS =3V
V
GS =2.5V
2.5
0
4.8
4.0
2.4
3.2
1.6
0.8
0
0
0.5
1
2
3
1.5
VDS , Drain-to-S ource Voltage (V)
VGS , Gate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0
15
12
9
VGS =4.5V
VGS =10V
V
GS =10V
=10A
I
D
6
V
GS =4.5V
=5A
I
D
3
1
150
0
25
125
50
100
1
75
12
24
36
48
60
Tj( C)
ID, Drain Current (A)
Tj, J unction Temperature ( C )
Figure 3. On-R esistance vs. Drain C urrent
and Gate Voltage
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3
S TU/D426S
1.15
1.10
1.3
V
DS =VG S
ID=250uA
1.2
I
D=250uA
1.1
1.0
0.9
0.8
1.05
1.00
0.95
0.90
0.85
0.7
0.6
6
0
-50
25 50
-25
125 150
75 100
-50 -25
0
25 50 75 100 125 150
Tj, J unction Temperature ( C )
Tj, J unction Temperature ( C )
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. G ate Threshold Variation
with Temperature
30
20.0
ID=9A
25
20
10.0
5.0
75 C
15
10
125 C
75 C
125 C
25 C
5
0
25 C
1.0
0
2
4
6
8
10
0.72
0.96
1.2
0.24
0.48
0
VGS , Gate- S ource Voltage (V)
V
S D, Body Diode Forward Voltage (V)
Figure 7. On-R esistance vs.
Gate-S ource Voltage
Figure 8. Body Diode Forward Voltage
Variation with S ource C urrent
4
S TU/D426S
2400
2000
10
8
V
DS =15V
I
D=10A
Ciss
1600
6
1200
800
4
Coss
2
0
6
400
Crss
0
0
5
10
15
20
25
30
0
5
10
20 25
30
35 40
15
VDS , Drain-to S ource Voltage (V)
Qg, Total G ate C harge (nC )
Figure 10. G ate C harge
Figure 9. Capacitance
600
100
220
TD(off)
100
60
t
i
TD(on)
1
Tr
m
Tf
m
s
Li
1
)
0
ms
N
100
(O
m
DS
s
R
10
10
1s
DC
V
G S =10V
VDS =15V,ID=1A
VG S =10V
S ingle P ulse
Tc=25 C
1
1
0.5
600
1
6
10
60 100 300
0.1
1
10
30 60
R g, G ate R esistance (
)
VDS , Drain-S ource Voltage (V)
Ω
Figure 12. Maximum S afe
Operating Area
Figure 11.switching characteristics
5
S TU/D426S
VDD
on
t
toff
d(off)
t
r
t
d(on)
t
R L
f
t
V IN
90%
10%
90%
D
OUT
V
OUT
V
V
VGS
10%
INVE R TE D
RGE N
G
90%
50%
50%
S
IN
10%
PULS E WIDTH
6
Figure 14. S witching Waveforms
Figure 13. S witching Test Circuit
(BR )DSS
15V
t
p
DRIVE R
L
V
DS
D.U .T
R
+
G
V
-
DD
I
A
AS
20V
0.01
t
p
I
AS
duct
In
i
ncl
U
ed
ve ave
f rms
am
W
p
o
t
Te Ci cu t
s
r i
d
uct
In
i
ve
ncl
U
ed
am
p
Figure 15b.
Figure 15a.
2
1
D=0.5
0.2
0.1
DM
P
0.1
0.05
1
t
2
t
0.02
0.01
1. R J JA (t)=r (t) * R J JA
2. R J JA=S ee Datasheet
3. TJM-TA = PDM* R J JA (t)
4. Duty Cycle, D=t1/t2
S INGLE PULS E
10-4
0.01
10-5
10-3
10-2
10-1
1
10
S quare Wave Pulse Duration (sec)
Figure 16. Normalized Thermal Transient Impedance Curve
6
S TU/D426S
7
S TU/D426S
5
95
7
35
05
85
0.94
4
9
7
3
41
3
30
3
3
84
5
1
9
9
3
6.00
0
36
BSC
2.29
BSC
1
0.090
82
9.70
398
0.064
33
56
1.425
0.650
1.625
0.850
REF .
6
L2
REF .
0.024
0.600
8
S TU/D426S
TO251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
" A"
TO-252 Carrier Tape
UNIT:р
K0
D1
P0
P1
P2
PACKAGE
A0
B0
D0
E
E1
E2
T
ӿ1.5
TO-252
(16 р*
6.80
²0.1
2.50
²0.1
1.75
0.1²
10.3
²0.1
16.0
0.3²
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
ӿ2
+ 0.1
-
0
TO-252 Reel
S
UNIT:р
T
N
W
R
M
H
S
G
K
V
TAPE SIZE
REEL SIZE
ӿ13.0
17.0
ӿ330
² 0.5
2.0
²0.5
ӿ97
² 1.0
2.2
10.6
16 р
ӿ 330
+
-
0.5
0.2
+ 1.5
-
0
9
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