IXTK46N50L [IXYS]
Power Field-Effect Transistor, 46A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN;
| 型号： | IXTK46N50L |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 46A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN |
| 文件： | 总5页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
IXTK46N50L
IXTX46N50L
VDSS = 500 V
ID25 = 46 A
Linear Power MOSFET
With Extended FBSOA
N-Channel Enhancement Mode
RDS(on) ≤ 0.16
Ω
TO-264 (IXTK)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
500
500
V
V
VDGR
G
D
S
VGS
Continuous
Transient
30
40
V
V
(TAB)
VGSM
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
46
100
46
A
A
A
PLUS247 (IXTX)
EAR
EAS
TC = 25°C
60
mJ
J
1.5
PD
TC = 25°C
700
W
TAB
TJ
-55 to +150
150
°C
°C
°C
TJM
Tstg
G = Gate
S = Source
D = Drain
TAB = Drain
-55 to +150
TL
1.6 mm (0.063 in) from case for 10 s
Plastic body for 10 s
300
260
°C
°C
TSOLD
Features
Md
Fc
Mounting torque
Mounting force
(TO-264)
1.13/10 Nm/lb.in.
(PLUS247TM)
20...120/4.5...27
N/lb.
z Designed for linear operation
z International standard package
z Unclamped Inductive switching (UIS)
Weight
Symbol
PLUS247
TO-264
6
10
g
g
rated
z Molding epoxies meet UL 94 V-0
flammability classification
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Applications
Min.
Typ.
Max.
z Programmable loads
z Current regulators
z DC-DC converters
z Battery chargers
z DC choppers
z Temperature and lighting controls
BVDSS
VGS(th)
VGS = 0 V, ID = 1 mA
500
3
V
V
VDS = VGS, ID = 250 μA
6
IGSS
IDSS
VGS = 30 V, VDS = 0 V
200
nA
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
50
1
μA
mA
RDS(on)
VGS = 20 V, ID = 0.5 ID25, Note 1
0.16
Ω
Advantages
z
Easy to mount
z
Space savings
z
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2007 IXYS CORPORATION, All rights reserved
DS99350A(03/07)
IXTK46N50L
IXTX46N50L
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
TO-264 (IXTK) Outline
VDS = 10 V; ID = 0.5 • ID25, Note 1
7
10
13
S
Ciss
Coss
Crss
7000
900
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
170
td(on)
tr
td(off)
tf
40
50
80
42
ns
ns
ns
ns
VGS = 15 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 Ω (External),
Qg(on)
Qgs
260
85
nC
nC
nC
VGS = 15 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
125
RthJC
RthCS
0.18 °C/W
°C/W
0.15
Safe Operating Area Specification
Symbol
SOA
Test Conditions
Min. Typ. Max.
VDS = 400 V, ID = 0.6 A, TC = 90°C
240
W
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
PLUS247TM (IXTX) Outline
Symbol
Test Conditions
IS
VGS = 0 V
46
100
1.5
A
A
ISM
VSD
trr
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V, Note 1
IF = IS, -di/dt = 100 A/μs, VR = 100V
V
600
ns
Note 1: Pulse test, t < 300 μs, duty cycle, d ≤ 2 %
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
PRELIMINARY TECHNICAL INFORMATION
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
e
L
L1
5.45 BSC
19.81 20.32
3.81
.215 BSC
.780 .800
.150 .170
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTK46N50L
IXTX46N50L
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
50
45
40
35
30
25
20
15
10
5
100
90
80
70
60
50
40
30
20
10
0
VGS = 20V
18V
VGS = 20V
18V
16V
14 V
16V
14V
12V
12 V
10 V
10V
9V
9V
8V
7V
8V
0
0
1
2
3
4
5
6
7
8
9
0
3
6
9
12 15 18 21 24 27 30
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
@ 125ºC
Fig. 4. RDS(on) Normalized to 0.5 ID25 Value
vs. Junction Temperature
50
45
40
35
30
25
20
15
10
5
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1.0
0.7
0.4
VGS = 20V
18V
VGS = 20V
16V
14V
12 V
ID = 46A
ID = 23A
10V
9V
8V
7V
0
0
2
4
6
8
10
12
14
16
18
-50
-25
0
25
50
75
100 125 150
VD S - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alize d to
0.5 ID25 Value vs. ID
Fig. 6. Drain Current vs. Case
Temperature
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
50
45
40
35
30
25
20
15
10
5
VGS = 20V
TJ = 125ºC
TJ = 25ºC
0
0
20
40
60
80
100
120
-50
-25
0
25
50
75
100 125 150
I D - Amperes
TC - Degrees Centigrade
© 2007 IXYS CORPORATION, All rights reserved
IXTK46N50L
IXTX46N50L
Fig. 8. Transconductance
Fig. 7. Input Admittance
70
60
50
40
30
20
10
0
20
18
16
14
12
10
8
TJ = -40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
-40ºC
6
4
2
0
5
0.5
0
6
7
8
9
10
11 12
13 14
15
0
10
20
30
40
50
60
70
VG S - Volts
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
16
14
12
10
8
70
60
50
40
30
20
10
0
VDS = 250V
ID = 23A
I
G = 10mA
TJ = 125ºC
6
TJ = 25ºC
4
2
0
0.6
0.7
VS D - Volts
0.8
0.9
1
0
30
60
90 120 150 180 210 240 270
Q G - nanoCoulombs
Fig. 11. Capacitance
10000
1000
100
C
C
iss
oss
C
rss
f = 1MHz
5
10
15
20
VD S - Volts
25
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTK46N50L
IXTX46N50L
Fig. 12. Forward-Bias Safe
Operating Area @ TC = 25ºC
Fig. 13. Forward-Bias Safe
Operating Area @ TC = 90ºC
1000
100
10
1000
100
10
TJ = 150ºC
TJ = 150ºC
RDS(on) Limit
RDS(on) Limit
25µs
25µs
100µs
100µs
1ms
1ms
10ms
10ms
DC
1
1
DC
0.1
0.1
10
100
1000
10
100
1000
VD S - Volts
VD S - Volts
Fig. 14. Maximum Transient Thermal Impedance
1.000
0.100
0.010
0.001
0.1
1
10
100
1000
Pulse Width - milliseconds
IXYS REF: T_46N50L (8N) 4-05-07-A.xls
© 2007 IXYS CORPORATION, All rights reserved
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