IXFN280N07 [IXYS]
HiPerFET Power MOSFETs Single Die MOSFET; HiPerFET功率MOSFET的单芯片MOSFET
| 型号： | IXFN280N07 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs Single Die MOSFET |
| 文件： | 总2页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
IXFN 280N07
VDSS
ID25 = 280 A
5 mΩ
< 250 ns
=
70 V
RDS(on)
trr
=
D
Avalanche Rated, High dv/dt, Low t
G
rr
Preliminary data sheet
S
S
Symbol
TestConditions
Maximum Ratings
miniBLOC,SOT-227B(IXFN)
E153432
VDSS
VDGR
TJ = 25°C to 150°C
70
70
V
V
S
TJ = 25°C to 150°C; RGS = 1 MΩ
G
VGS
Continuous
Transient
±20
±30
V
V
VGSM
S
ID25
IL(RMS)
IDM
TC = 25°C,
Chip
capability28
D
Terminal current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
100
1120
180
A
A
A
G = Gate
S = Source
D = Drain
IAR
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
EAR
TC = 25°C
TC = 25°C
60
3
mJ
J
EAS
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
,
5
V/ns
Features
•Internationalstandardpackages
PD
600
W
•miniBLOC, withAluminiumnitride
TJ
-55 ... +150
150
°C
°C
°C
isolation
•Low RDS (on) HDMOSTM process
TJM
Tstg
-55 ... +150
•Ruggedpolysilicongatecellstructure
•UnclampedInductiveSwitching(UIS)
rated
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
•Lowpackageinductance
Md
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
•FastintrinsicRectifier
Weight
30
g
Applications
• DC-DC converters
• Synchronousrectification
• Batterychargers
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
• Switched-modeandresonant-mode
• pDoCwecrhospuppeprlsies
VDSS
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
70
V
V
VGH(th)
2.0
4.0
• Temperatureandlightingcontrols
• Low voltage relays
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200 nA
100 µA
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
2
mA
Advantages
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS = 10 V, I = 120A
Pulse test, t ≤D300 µs,
duty cycle d ≤ 2 %
5 mΩ
98555B (1/02)
© 2002 IXYS All rights reserved
IXFN 280N07
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
miniBLOC, SOT-227 B
min.
typ. max.
VDS = 15 V; 60A, pulse test
60
90
S
Ciss
Coss
Crss
9400
4600
2550
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
65
90
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 90A
M4 screws (4x) supplied
RG = 1 Ω (External),
140
55
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
Qg(on)
Qgs
420
65
nC
nC
nC
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
VGS = 10 V, VDS, ID = 100A
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
Qgd
220
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
RthJC
RthCK
0.22 K/W
K/W
J
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
K
0.05
L
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
M
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
Q
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U-0.05
24.59
25.07
0.968
0.987
0.004
0.1
-0.002
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IS
TestConditions
VGS = 0 V
280
1120
1.3
A
A
V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = 100A, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 50A, -di/dt = 100 A/µs
TJ = 25°C
200 ns
QRM
IRM
VR = 50V
1.2
10
µC
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
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5,486,715 6,306,728B1
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