IXFN32N120 [IXYS]
HiPerFET Power MOSFETs; HiPerFET功率MOSFET
| 型号： | IXFN32N120 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs |
| 文件： | 总4页 (文件大小：570K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advanced Technical Data
HiPerFETTM
Power MOSFETs
IXFN 32N120
VDSS = 1200V
ID25 32A
RDS(on) = 0.35Ω
=
N-Channel Enhancement Mode
AvalancheRated, Highdv/dt, Lowtrr
D
G
S
S
Symbol
TestConditions
Maximum Ratings
miniBLOC,SOT-227B(IXFN)
E153432
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
1200
1200
V
V
S
G
VGS
Continuous
Transient
30
40
V
V
VGSM
S
ID25
TC = 25°C, Chip capability
32
A
D
IDM
IAR
TC = 25°C, pulse width limited by TJM
TC = 25°C
128
32
A
A
G = Gate
D = Drain
EAR
TC = 25°C
TC = 25°C
64
4
mJ
J
S = Source
TAB = Drain
EAS
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ≤ 150°C, RG = 2 Ω
,
15
V/ns
Features
PD
TC= 25°C
780
W
• International standard package
TJ
-55 ... +150
150
-55 ... +150
°C
°C
°C
• miniBLOC, with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
TJM
Tstg
• Rugged polysilicon gate cell
structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
VISOL
Md
50/60 Hz, RMS
ISOL ≤ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
I
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
Applications
Symbol
TestConditions
Characteristic Values
•
•
•
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
1200
2.5
V
V
VGS(th)
5.0
•
•
DC choppers
Temperature and lighting controls
IGSS
IDSS
VGS(th) = 30 VDC, VDS = 0
200 nA
VDS = VDSS
VGS = 0 V
T = 25°C
TJJ = 125°C
50 µA
3
mA
Advantages
RDS(on)
V
= 10 V, ID = 0.5 • I
0.35
Ω
PuGSlse test, t ≤ 300 µs,D25
duty cycle d ≤ 2 %
•
•
•
Easy to mount
Space savings
High power density
© 2003 IXYS All rights reserved
DS98968B(10/03)
IXFN 32N120
Symbol
gfs
TestConditions
Characteristic Values
miniBLOC, SOT-227 B
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
VDS = 20 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
28
52
S
Ciss
Coss
Crss
15900
1000
260
pF
pF
pF
td(on)
tr
td(off)
tf
36
42
98
22
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 Ω (External),
M4 screws (4x) supplied
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
A
B
31.50
7.80
31.88
8.20
1.240
0.307
Qg(on)
Qgs
Qgd
400
70
188
nC
nC
nC
C
D
4.09
4.09
4.29
4.29
0.161
0.161
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
E
F
4.09
14.91
4.29
15.11
0.161
0.587
G
H
30.12
38.00
30.30
38.23
1.186
1.496
RthJC
RthCK
0.16 K/W
K/W
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.05
L
M
0.76
12.60
0.84
12.85
0.030
0.496
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IS
TestConditions
VGS = 0 V
32
128
1.3
A
A
V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 25A, -di/dt = 100 A/µs, VR = 100 V
180
1.4
8
300 ns
QRM
IRM
µC
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFN 32N120
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
60
50
40
30
20
10
0
32
28
24
20
16
12
8
VGS = 10V
5V
VGS = 10V
6V
5V
4
4V
4V
0
0
0
0
2
4
6
8
10
12
24
64
0
5
10
15
20
25
30
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. RDS(on) Normalized to ID25 Value vs.
Junction Temperature
32
28
24
20
16
12
8
2.6
2.4
2.2
2
VGS = 10V
5V
VGS = 10V
1.8
1.6
1.4
1.2
1
ID = 32A
ID = 16A
4V
0.8
0.6
0.4
4
0
4
8
12
16
20
-50
-25
0
25
50
75
100 125 150
VD S - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID25
Value vs. ID
Fig. 6. Drain Current vs. Case
Temperature
2.6
2.4
2.2
2
35
30
25
20
15
10
5
VGS = 10V
TJ = 125ºC
1.8
1.6
1.4
1.2
1
TJ = 25ºC
0.8
0
8
16
24
32
40
48
56
-50
-25
0
25
50
75
100 125 150
I D - Amperes
TC - Degrees Centigrade
© 2003 IXYS All rights reserved
IXFN 32N120
Fig. 8. Transconductance
Fig. 7. Input Admittance
40
36
32
28
24
20
16
12
8
90
80
70
60
50
40
30
20
10
0
TJ = -40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
-40ºC
4
0
3
0.2
0
3.5
4
4.5
5
5.5
1.4
40
0
8
16
24
32
40
48
56
64
VG S - Volts
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
100
90
80
70
60
50
40
30
20
10
0
VDS = 600V
ID = 16A
G = 10mA
I
TJ = 125ºC
TJ = 25ºC
0.4
0.6
0.8
1
1.2
0
50 100 150 200 250 300 350 400 450
Q G - nanoCoulombs
VS D - Volts
Fig. 12. Maximum Transient Thermal
Resistance
Fig. 11. Capacitance
100000
10000
1000
0.18
0.16
0.14
0.12
0.1
f = 1MHz
C
iss
0.08
0.06
0.04
0.02
0
C
oss
C
rss
100
1
10
100
1000
5
10
15
20
25
30
35
VD S - Volts
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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